ne800299
Abstract: NE8002 NE800196 NE8001 NE800199 NE800200 NE800296 40MAG NE800
Contextual Info: C-BAND MEDIUM POWER GaAs MESFET NE8001 SERIES NE8002 SERIES FEATURES NE800196 PidB = 26 dBm, GidB = 8.5 dB, Vos = 9 V, f = 7.2 GHz NE800296 PidB = 29 dBm, GidB = 8 dB, Vds = 9 V, f = 7.2 GHz BROADBANDCAPABIUTY AVAILABILITY: Hermetic Packages Chip PROVEN RELIABILITY
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NE800196
NE800296
NE8001
NE8002
lS21l
lS22l
IS12I
L42752S
ne800299
NE800199
NE800200
40MAG
NE800
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SVI 3104 c
Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Contextual Info: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or
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AN83301-1
NE24615
AN83302
AN83303-1
NE71083
NE70083
AN83901
AN85301
11/86-LN
AN86104
SVI 3104 c
UPC1678G
ne333
stb 1277 TRANSISTOR equivalent
transistor bf 175
NE85635 packaging schematic
NE72000 VC
svi 3104
NE9000
NE720
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NE8002
Abstract: NE800196 NE800 E8500 NE9001
Contextual Info: Power GaAs FET Selection Guide C-BAND INTERNALLY MATCHED DEVICES Typical Specifications @ T a = 25°C U n ta rlty P a m rtO a M Linear Gain dB PowBf Added Efficiency Frequency R an g* (GHz) (dBm) N E Z 3 6 4 2 -1 5 D 3 .6 to 4.2 42.5 10.0 37 N E Z 3 6 4 2 -8 D
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542-15D
NEZS964-1SDD
NEZ7785-15D/DD
NEZ4450-15D/DD
NEZ3642-8D
NEZ6472-1S
NEZ7177-8D/DD
NEZ5984-8D/DD
NEZ4450-8D/DD
NEZ8472-8P/DD
NE8002
NE800196
NE800
E8500
NE9001
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ne8002
Abstract: NE800296 NE800199 NE800196 NE800299
Contextual Info: C-BAND MEDIUM POWER GaAs MESFET nesooi series NE8002series FEATURES • NE800196 PidB = 26 dBm, GidB = 8.5 dB, V d s = 9 V , f = 7.2 GHz • NE800296 PidB = 29 dBm, GidB = 8 dB, Vos = 9 V, f = 7.2 GHz • BROADBAND CAPABILITY • AVAILABILITY: Hermetic Packages
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NE800196
NE800296
NE8002series
PARTN06
IS12I
IS12S21I
ne8002
NE800199
NE800299
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NE800296
Abstract: ne800299 NE8002 NE8001 NE800199 NE800196 NE800
Contextual Info: C-BAND MEDIUM POWER GaAs MESFET n es o o i s e r ie s NE8002SER,ES FEATURES NE800196 PidB = 26 dBm, GidB = 8.5 dB, Vos = 9 V, f = 7.2 GHz NE800296 PidB = 29 dBm, GidB = 8 dB, V ds = 9 V, f = 7.2 GHz BROADBAND C APABILITY AVAILABILITY: CO Hermetic Packages
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NE800196
NE800296
8002S
NE8001
NE8002
ne800299
NE800199
NE800
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NE800495-4
Abstract: GaAs MESFET NE900474-15 NE800400 NE8004 NE800296 NES2527-20B NE900400 NES1417-20B NE800196
Contextual Info: Power GaAs FET Selection Guide C-BAND INTERNALLY MATCHED DEVICES Typical Specifications @ T a = 2 5 °C Mr 1 v . j Limar PomrMdad Giln <« Effldtncy %) vn (6Hi) (dBm) NEZ4450-15D 4.4 to 5.1 42.5 10.0 35 10.0 NEZ4450-15DD 4.410 5.1 42.5 10.0 35 NEZ4450-8D
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NEZ4450-15D
NEZ4450-15DD
NEZ4450-8D
NEZ4450-8DD
MEZ4450-4D
NEZ4450-4DD
MEZ5964-15D
NEZ5964-15DD
NEZ5964-8D
KEZ5964-8DD
NE800495-4
GaAs MESFET
NE900474-15
NE800400
NE8004
NE800296
NES2527-20B
NE900400
NES1417-20B
NE800196
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