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NEC Electronics Group


NEC Electronics Group NE800495-7 Trans FET N-CH 20V 1.6A GaAs MESFET 4-Pin
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	NE800495-7		49		1	1 $48.00 10 $44.16 100 $42.24 1000 $42.24 10000 $42.24	Buy Now
Quest Components ()	NE800495-7		39			1 $96.00 10 $96.00 100 $76.80 1000 $76.80 10000 $76.80	Buy Now
	NE800495-7		39			1 $52.00 10 $52.00 100 $48.00 1000 $48.00 10000 $48.00	Buy Now
NEC Electronics Group NE800495-4 Trans FET N-CH 20V 1.6A GaAs MESFET 4-Pin
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	NE800495-4		39		1	1 $48.00 10 $44.16 100 $42.24 1000 $42.24 10000 $42.24	Buy Now
Quest Components ()	NE800495-4		31			1 $90.00 10 $90.00 100 $72.00 1000 $72.00 10000 $72.00	Buy Now
	NE800495-4		31			1 $52.00 10 $52.00 100 $48.00 1000 $48.00 10000 $48.00	Buy Now
	NE800495-4		10			1 $58.50 10 $56.25 100 $56.25 1000 $56.25 10000 $56.25	Buy Now
NEC Electronics Group NE800495-6 Trans FET N-CH 20V 1.6A GaAs MESFET 4-Pin
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	NE800495-6		21		1	1 $48.00 10 $44.16 100 $44.16 1000 $44.16 10000 $44.16	Buy Now
Quest Components ()	NE800495-6		16			1 $96.00 10 $86.40 100 $81.60 1000 $81.60 10000 $81.60	Buy Now
	NE800495-6		16			1 $52.00 10 $52.00 100 $50.00 1000 $50.00 10000 $50.00	Buy Now
NEC Electronics Group NE800495-8 RF SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 1-ELEMENT, C BAND, GALLIUM ARSENIDE, N-CHANNEL, METAL SEMICONDUCTOR FET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	NE800495-8		23			1 $58.50 10 $56.25 100 $54.00 1000 $54.00 10000 $54.00	Buy Now

NE800495 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
ne8004 FET Abstract: ne800495-6 NE800495 NE8004 ne0800 NE8004956 Contextual Info: NE8004 SERIES C-BAND POWER GaAs MESFET FEATURES NE800495-X S2HVS FREQUENCY CLASS A OPERATION HIGH EFFICIENCY: t]A D D ;> 35% TYP BROADBAND CAPABILITY AVAILABILITY: Chip Hermetic Package m •o PARTIALLY MATCHED INPUT FOR PACKAGED DEVICES CO PROVEN RELIABILITY	OCR Scan	ne8004 ne800495-x ne800495 e800400 +5gm037 ne8004 fet ne800495-6 ne0800 ne8004956	PDF
NE8004 Abstract: NE800495-4 Contextual Info: NE8004 SERIES C-BAND POWER GaAs MESFET FEATURES NE800495-X S 212vs FREQUENCY . CLASS A OPERATION • HIGH EFFICIENCY: t ADD > 3 5 % T Y P • BROADBAND CAPABILITY • AVAILABILITY: Chip H erm etic Package . PARTIALLY MATCHED INPUT FOR PACKAGED DEVICES •	OCR Scan	ne8004 ne800495-x 212vs l42752s +20dlss40 ne800495-4	PDF
SVI 3104 c Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720 Contextual Info: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or	OCR Scan	an83301-1 ne24615 an83302 an83303-1 +16ne71083 ne70083 an83901 an85301 11/86-ln an86104 svi 3104 c upc1678g ne333 stb 1277 transistor equivalent transistor bf 175 ne85635 packaging schematic ne72000 vc svi 3104 ne9000 ne720	PDF
NE800296 Abstract: diode deg avalanche zo 150 63 NE72089 ne8002 SK3448 universal jfet biasing curve graph gunn diode ghz s-parameter NE800196 impatt diode NE800495-4 Contextual Info: California Eastern Laboratories AN82901-1 APPLICATION NOTE Application of Microwave GaAs FETs INTRODUCTION The history of converting microwave communications, as well as other communications technologies, to solid state electronics is a long one. Early advances were first made in	Original	an82901-1 24-hour ne800296 diode deg avalanche zo 150 63 +8ne72089 ne8002 sk3448 universal jfet biasing curve graph gunn diode ghz s-parameter ne800196 impatt diode ne800495-4	PDF
881-1 nec Abstract: NE345L-20B NES1417-20B cd 17821 LA 7687 a sit 16250 NE72084 NE3451600 NES1417-10B NES1723-20B Contextual Info: N E C / 1SE CALIFORNIA NEC D b4S7414 Q001S37 1 T -S 1 -9 0 L, S-BAND POWER G aAs MESFET NE345 SERIES FEATURES APPLICATIONS • C H IP O R P A C K A G E O P T IO N S • L-BAN D R A D A R • H IG H P out 1 0 W & 2 0 W • N ARRO W -BAN D C O M M U N IC A TIO N S	OCR Scan	b4s7414 g001s37 ne345 ne3451600 +12ofsioz/sins72 s22-s21s12 ne345100 881-1 nec ne345l-20b nes1417-20b cd 17821 la 7687 a sit 16250 ne72084 nes1417-10b nes1723-20b	PDF
NE800495-4 Abstract: NE8004 NE800495-5 NE800495-7 Contextual Info: NE8004 SERIES C-BAND POWER GaAs MESFET FEATURES N E 800495-X S 2i>vs FR E Q U E N C Y CLASS A OPERATION HIGH EFFICIENCY: t ia d d £ 35% TYP BROADBAND CAPABILITY AVAILABILITY: C hip H e rm e tic P a c k a g e CD T3 PARTIALLY MATCHED INPUT FOR PACKAGED DEVICES	OCR Scan	ne8004 800495-x vol56 s12s21 +3ne800495-4 ne800495-5 ne800495-7	PDF
NE800296 Abstract: NE800196 NE24406 diode deg avalanche zo 150 63 SK3448 ne8002 NE868199 shockley diode NE800495-4 shockley diode application Contextual Info: California Eastern Laboratories AN82901-1 APPLICATION NOTE Application of Microwave GaAs FETs 9/82 INTRODUCTION The history of converting microwave communications, as well as other communications technologies, to solid state electronics is a long one. Early advances were first made in	Original	an82901-1 ne800296 ne800196 ne24406 +7diode deg avalanche zo 150 63 sk3448 ne8002 ne868199 shockley diode ne800495-4 shockley diode application	PDF
NE800495-4 Abstract: GaAs MESFET NE900474-15 NE800400 NE8004 NE800296 NES2527-20B NE900400 NES1417-20B NE800196 Contextual Info: Power GaAs FET Selection Guide C-BAND INTERNALLY MATCHED DEVICES Typical Specifications @ T a = 2 5 °C Mr 1 v . j Limar PomrMdad Giln <« Effldtncy %) vn (6Hi) (dBm) NEZ4450-15D 4.4 to 5.1 42.5 10.0 35 10.0 NEZ4450-15DD 4.410 5.1 42.5 10.0 35 NEZ4450-8D	OCR Scan	nez4450-15d nez4450-15dd nez4450-8d nez4450-8dd +16mez4450-4d nez4450-4dd mez5964-15d nez5964-15dd nez5964-8d kez5964-8dd ne800495-4 gaas mesfet ne900474-15 ne800400 ne8004 ne800296 nes2527-20b ne900400 nes1417-20b ne800196	PDF