N313 Search Results

FD04

Abstract: BQ-M311RD common anode 7 segment dsp
Contextual Info: Four Digit LED Displays 7-Segment Part No. Digit Size 0.31" Four-Digit 0.33" Four-Digit Absolute Maximum Ratings Chip Common Anode Common Cathode BQ-M311RD BQ-M315RD BQ-M315RE BQ-M312RD BQ-M313RD BQ-N311RD BQ-N315RD BQ-N315RE BQ-N312RD BQ-N313RD BQ-M314RD

2044B

Abstract: 2SA1732 ITR04435 ITR04436 ITR04437 ta1210 N-313
Contextual Info: 注文コード No. N 3 1 3 6 2SA1732 N3136 20400 2SA1732 特長 PNP エピタキシァルプレーナ形シリコントランジスタ 高速度スイッチング用 ・FBET, MBIT プロセス採用。 ・電流容量が大きい。 ・コレクタ・エミッタ飽和電圧が低い。

2SK1332

Abstract: 2SK303 ITR01031 ITR01032 ITR01033 ITR01034 ITR01035 ITR01036 ITR01037
Contextual Info: 注文コード No. N 3 1 3 7 2SK1332 No. N3137 83199 2SK1332 N チャネル接合形シリコン電界効果トランジスタ 低周波一般増幅用 用途 ・可変抵抗器 , アナログスイッチ , 低周波増幅 , 定電流用として最適である。

Contextual Info: MECHANICAL DATA MPBG003 – NOVEMBER 1995 GFS S-PBGA-N313 PLASTIC BALL GRID ARRAY PACKAGE 35,00 SQ 30,00 SQ 2,54 22,00 SQ 2,26 TYP A 1 2,33 1,17 Solder Balls 0,60 4073204/A 11/95 NOTES: A. All linear dimensions are in millimeters. B. This drawing is subject to change without notice.

BQ-M332RD

Abstract: BQ-M336RD BQ-M311RD BQ-M312RD BQ-M313RD BQ-M314RD BQ-M315RD BQ-M315RE BQ-M316RD BQ-M31DRD
Contextual Info: Part No. Digit Size 0.31" Four-Digit 0.33" Four-Digit Absolute Maximum Ratings Chip Common Anode Common Cathode BQ-M311RD BQ-M315RD BQ-M315RE BQ-M312RD BQ-M313RD BQ-N311RD BQ-N315RD BQ-N315RE BQ-N312RD BQ-N313RD BQ-M314RD BQ-N314RD BQ-M316RD BQ-M31DRD BQ-M331RD

BQ-M311RD

Abstract: BQ-M312RD BQ-M313RD BQ-M314RD BQ-M315RD BQ-M315RE BQ-M316RD BQ-M31DRD BQ-M331RD BQ-M335RD
Contextual Info: SINCE 1981 Part No. Digit Size 0.31" Four-Digit 0.33" Four-Digit Absolute Maximum Ratings Chip Common Anode Common Cathode BQ-M311RD BQ-M315RD BQ-M315RE BQ-M312RD BQ-M313RD BQ-N311RD BQ-N315RD BQ-N315RE BQ-N312RD BQ-N313RD BQ-M314RD BQ-N314RD BQ-M316RD BQ-M31DRD

2t01

Abstract: OHN3130U OHS3130U
Contextual Info: 0 OPTEK Product B ulletin O H N3130U M ay 1996 Hallogic Hall Effect Sensors Types N3130U, OHS3130U Features A b so lute M axim um Ratings (T a = 2 5 ° C unless otherw ise noted • Operates over a broad range of supply voltages • Excellent temperature stability to

6 digit TN 70 pin LCD panel

Abstract: C5100 NR-9 c5193 C175 513 s12
Contextual Info: :3 1 V 0 S :30Vd G i v a -ÀB Q 3AQ yddV •AS Q3>03H0 AAVLUOO’ X 9 L U n rM M M ¡B3M AM L u o a 'x a L u n r M M M 0 6 Z Z ‘6 S £ '/ t e 'L + 9 /6 9 - /9 0 0 9 N M vya < ;n =3N0Hd N313H '3 0 6 2 ‘Nl ‘ M 31A 0 0 ; 9 ‘13NVd 0 0 1 lAIOlSflD IIOIQ /

2n3137

Contextual Info: rZ 7 * 7 # SGS-THOMSON R HiOraSOSDOS 2 N3137 RF AMPLIFIER D E S C R IP T IO N The N3137 is a silicon planar epitaxial NPN tran­ sistor in a TO-39 metal case. It is a primarily de­ signed for application as a Class-C, RF power amplifier. In addition to the large signal capabilities,

BQ-N336RD

Contextual Info: Four Digit LED Displays 7-Segment Part No. Digit Size 0.31" Four-Digit 0.33" Four-Digit Absolute Maximum Ratings Chip Common Anode Common Cathode BQ-M311RD BQ-M315RD BQ-M315RE BQ-M312RD BQ-M313RD BQ-N311RD BQ-N315RD BQ-N315RE BQ-N312RD BQ-N313RD BQ-M314RD

Contextual Info: BRIGHT LED ELECTRONICS CORP. BV-N313RD SINCE 1981 1. 0.30 inch 7.60mm Digit Height. 2. Continuous uniform segments. 3. Low power requirement. 4. Excellent characters appearance. 5. Solid state reliability. 6. Categorized for luminous intensity. 7. Multiplex drive common cathode.

2044B

Abstract: 2SA1731 ITR04425 ITR04426 ITR04427 31353 n3135
Contextual Info: 注文コード No. N 3 1 3 5 A 2SA1731 N3135A 20400 * 半導体ニューズ No.3135 とさしかえてください。 2SA1731 特長 PNP エピタキシァルプレーナ形シリコントランジスタ 高速スイッチング用 ・FBET, MBIT プロセス採用。

Contextual Info: @ .O P IE K P roduct Bulletin O H N3130U M ay 1996 Hallogic Hall Effect Sensors Types N3130U, OHS3130U ¡11 111 DIMENSIONS ARE IN INCHES MILLIMETERS Features A b so lute M axim um Ratings (T a = 2 5 ° C unless otherw ise noted) • Operates over a broad range of

N313

Abstract: M-015
Contextual Info: MECHANICAL DATA MPBG003A – FEBRUARY 1996 – REVISED DECEMBER 1998 GFS S-PBGA-N313 PLASTIC BALL GRID ARRAY 35,00 SQ 30,48 TYP 1,27 30,00 SQ 1,27 AE AD AC AB AA Y W V U T R P N M L K J H G F E D C B A 1 3 2 5 4 7 6 9 8 10 11 13 15 17 19 21 23 25 12 14 16 18 20 22 24

ddr dimm pinout

Abstract: L1238 socket am3 pinout j8510 fairchild aa11 MDIO clause 22 J124 J68 10A intel D915 xcvr
Contextual Info: Stratix GX Development Board Data Sheet August 2003, ver. 1.1 Designers can use the Stratix GX Development Board to prototype and develop high-speed applications for StratixTM GX and StratixTM FPGAs. Use of this board can shorten the time to market for applicable designs.

2sk2500

Abstract: UPC1037HA UPC648C 2SK927 NEC 2SK2500 uPD5201G UPA64HA UPD6360C 2SH24 n13t1
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

u574

Abstract: IC BL 176A IF cable 8D-FB COAXIAL CABLE 5D-2V b11g 105j 250v 2DLF MQ 303A B177D B176D
Contextual Info: •W CONTEf S in c e 1978 s 1 Reg. No. Q8718 ISO -9001: 2000 - BT" É ? Jk 100MHz 300MHz * 400MHz P3 ~ P4 800MHz N ANTENNA 1 1» P6 144/430MHZ P7 ~ P10 TWO BAND P11 ~ P12 MIC ECHO AMP P13 I EARPHONE MIC P13 ANTENNA B A S E TRANSCEIVER A C C ESSO R IES P15 ~ P16

3866S

Abstract: transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515
Contextual Info: H Integrated Circuits MOS LSIs Page MOS LSI Type No. Page Type No. Page Type No. Page Type No. Page M N 171608 42 A M N 18P73210 43 M N 3210 69 M N 5179/H 91 M N 171609 42 AM N 18P73215 43 M N 3214 69 MN5181 91 M N 3102 69 M N 53 00 0 Series 55 M N 33 00 Series

WL4-3P2130

Abstract: WL4-3F2130 WL4-3F3130 WL4-3P2230 WL4-3E1330 wl4s-3p2230 WL4S-3P2232 WL4-3P3130 E1332 WL4S-3F2130
Contextual Info: switching threshold adaptation and autocollimation. Transparent objects of all kinds can H E E T D Photoelectric reflex switch with A T A S Miniature photoelectric switches series W4-3: The efficient space savers be reliably detected in difficult and changing ambient conditions, with

V850E2

Abstract: TSG20 v850E2M architecture Users Manual v850e2/dx4
Contextual Info: User’s Manual 32 V850E2/Px4 User’s Manual: Hardware Renesas microcomputers V850 Series All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by

Sprague Hall Effect

Abstract: 27631 A 27631 UGN-3131U gj hall effect hall 3131 3131H UGS-3131T Bipolar Hall UGS-3131U
Contextual Info: U G N -3131T U G N -3 131 U UGS-3131T 4J>SPRAGUE_ THE MARK OF RELIABILITY _ DATA SHEET 27631 ULTRA-SENSITIVE HALL EFFECT BIPOLAR SWITCHES FEATURES • • • • • • 4 .5 V to 24V O peration High R e lia b ility — No Moving Parts Constant O utput A m p litu d e

1HT251

Abstract: 2T203 kt117 1T308 2T355A 2T312 IT308B K1HT251 kt117b 2T313
Contextual Info: WmmËÊÊm W h A iW f W * i r*ïS >*••> ro s ît. ;<W«a 7 mm m$m 15ÎÏ3 Sktófefc?¿feS 11181 immm SI f ' ■ ' ' ' : m S ËÊB B S M M CnPABOHHMK nonynpoBQQHHKOBbiE nPHBOPbl TPAH3MCTOPbl MAflOI/ì MOLUHOCTM n O f l PEA A K L4H EPÌ A . B rO flO M E A O B A

n503

Abstract: n383 LCD N96 N349 n352 SFAA3L N555 data sheet n345 N546 N582
Contextual Info: Z-Power LED X10490 Technical Data Sheet *Customer : Specification SFAA3L CUSTOMER Checked by Approved by SUPPLIER Drawn by Approved by Rev. 1.00 December 2009 www.acriche .com www.acriche.com Document No. : SSC-QP-7-07-24 Rev.00 Z-Power LED X10490 Technical