2044B
Abstract: 2SA1732 ITR04435 ITR04436 ITR04437 ta1210 N-313
Contextual Info: 注文コード No. N 3 1 3 6 2SA1732 N3136 20400 2SA1732 特長 PNP エピタキシァルプレーナ形シリコントランジスタ 高速度スイッチング用 ・FBET, MBIT プロセス採用。 ・電流容量が大きい。 ・コレクタ・エミッタ飽和電圧が低い。
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2sa1732n31362044bitr04442+8itr04439itr04443itr04444itr04435itr04436itr04437ta1210n-313
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2SA1732
Abstract: 2044B ITR04435
Contextual Info: Ordering number:ENN3136 PNP Epitaxial Planar Silicon Transistor 2SA1732 High-Speed Switching Applications Package Dimensions • Adoption of FBET processes. · Large current capacity. · Low collector-to-emitter saturation voltage. · High-speed switching.
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enn31362sa17322045b2044b+1itr04435
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2044B
Abstract: 2SA1732 ITR04435
Contextual Info: Ordering number:ENN3136 PNP Epitaxial Planar Silicon Transistor 2SA1732 High-Speed Switching Applications Package Dimensions • Adoption of FBET processes. · Large current capacity. · Low collector-to-emitter saturation voltage. · High-speed switching.
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enn31362sa17322045b2044b+1itr04435
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