N582 Search Results

1N5822

Contextual Info: Philips Semiconductors APX fc,b53T31 00EbT34 Tflb Controlled avalanche Schottky Product specification N5820ID/21ID/22ID barrier diodes N AMER PHILIPS/DISCRETE DESCRIPTION Schottky barrier diodes in hermetically sealed SOD84A Implosion Diode ID envelope,

n5822

Abstract: 1N5820 1N5821 1N5822 A475
Contextual Info: :m ic g n d u c to r T m 1N5Ô20 - 1 N5822 Features 1.0 min 25.4 • 3.0 ampere operation at T A = 95 °C with no therm al runaway. Dimensions in inches (mm) • For use in low voltage, high frequency inverters free wheeling, and polarity protection applications.

N5822

Abstract: N5821 lN5822 1N5820 1N5821 1N5822 D0201AD
Contextual Info: 3 Amp Schottky Rectifier 1N 5820,1 N5821,1 N5822 : £ Dim. Inches Minimum .188 1.00 .285 .046 A B C D M illim e te r Maximum Minimum .260 Maximum Notes 4.78 25.4 7.24 1.17 - .375 .056 6.50 Dia. 9.52 1.42 Dia. - PLASTIC D0201AD Microsemi Catalog Number

TND012MP

Abstract: TA-3182
Contextual Info: TND012MP 注文コード No. N 5 8 2 8 E 三洋半導体データシート 半導体データシート No. N5828D をさしかえてください。 エクセレントパワーデバイス TND012MP ランプドライブ, ソレノイドドライブ, モータドライブ用

N5822

Contextual Info: : m ic q n d u c to r T m N5820 -1 N5822 Features 1.0 m in • 3.0 ampere operation at T A = 95°C with no therm al runaway. • For use in low voltage, high freq u e n cy inverters free wheeling, and polarity protection applications. 25.4 Dimensions in

1N5820

Abstract: 1N5821 1N5822
Contextual Info: O JGD N5820 th ru 1 N5822 3 .0 AMPS. SCHOTTKY BARRIER RECTIFIERS VOLTAGE RANGE 20 to 40 volts CURRENT 3.0 Amperes D O -2Q1A D FEATURES T * Low forward voltage drop * High current capability .210 5 . 3 . 190 (4 . 8 ) * High reliability 1 .0 ( 25 . 4 ) MIN.

n5822

Abstract: N5820 1N5820-1 1N5820 1N5821 1N5822
Contextual Info: N5820 - 1 N5822 VISHAY 3.0A SCHOTTKY BARRIER RECTIFIERS Features_ • • • • • • • Schottky Barrier Chip G uard Ring Die C onstruction for T ransient Protection Low Power Loss, High Efficiency High Surge C apability High C urrent C apability and Low Forward

1N5822 SMA

Abstract: 1N5820 SMA N5821 1N5821 N5822 1N5820 1N5822 D0201AD
Contextual Info: 3 Amp Schottky Rectifier N5820,1 N5821,1 N5822 : r Dim . Inches Minimum .188 1.00 .285 .046 A B C D M illim e te r Maximum Minimum .260 - .375 .056 Maxim um Notes 4.78 25.4 7.24 1.17 6.50 Dia. 9.52 1.42 Dia. - PLASTIC D0201AD Microsenni Catalog Number

IN5824

Abstract: 220 uh r 10k LM2590HV N5824
Contextual Info: + 12V +V, U n regulated Feedback LM 2590HV - 5.0 1 DC Input Flag 6 33 / iH + 5 .0 V Output O E rro r Flag -, S h u td o w n / S o ft 7 s ta rt SD /SS 5 Delay ^ 330 ¿¿F 4 Gnd Cm i t D1 1 N5824 =CIN = CSS 0.1 ilY —= CDELAY 0.1 i i F 220 nF Regulated 0 u tPut

Contextual Info: x b b 'B ìlC N5826NK N5826NK X U* t i la M ultiplex Sound System Demodulator C ircuit • m 9 Unit • mm A N5826NK IÌ, r u ■ « m ? >'<7 h I S r l t “Tb6 • > h ^fcÌK H i U l ' i t f t , i h ì s ^ 'T - i ì • P L L «glj <n tz * , lì - Y y i

1N5824

Abstract: 1N5825 1N5823 N5823
Contextual Info: 5 Amp Schottky Rectifier N5823, N5824. N5825 Dim. Inches Minimum A B C D E Microsemi Catalog Number Working Peak Reverse Voltage Repetitive Peak Reverse Voltage 20V 30V 40V 20V 30V 40V N5823 N5824 N5825 M illim eter Maximum Minimum -.980 -.046

1N5322

Abstract: oasis 1N582 1N5820 1N5821 1N5822 10i25
Contextual Info: E TAIWAN SEMICONDUCTOR N5820 - 1 N5822 3.0 AMPS. Schottky Barrier Rectifiers DÛ-201AD tà RoHS C O M P L IA N C E .220 ¡5.61 .197 ¡S.Dl Features ❖ •4❖ ❖ ❖ ❖ ❖ Low power less, high efficiency. High current capability. Low VF. High reliability

n5822

Abstract: 1N5820-1N5822 1N5820 1N5821 1N5822
Contextual Info: N5820 - 1 N5822 3.0A SCHOTTKY BARRIER RECTIFIERS Features • • • • • • • Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward

2N5825

Abstract: 2N5822 2N5820 2N5823 2U58 2N5821
Contextual Info: ' : N582Ó through 2 N5823 ' COMPLIMENTARY SILICON AF MEDIUM POWER TRANSISTORS P n I CASE TO-92F THE N5820 THROUGH N5825 ARE SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF DRIVERS AND OUTPUTS, AS WELL AS FOR UNIVERSAL APPLI­ CATIONS. THEY ARE SUPPLIED IN TO-92F PLASTIC

Contextual Info: MOTOROLA Order this document by MF122/D SEMICONDUCTOR TECHNICAL DATA NPN M JF122 Com plem entary Power Darlingtons PNP M JF127 For Isolated Package Applications Designed for general-purpose amplifiers and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink

TC125501

Contextual Info: Semiconductor, Inc. TC 125 TC 126 PFM STEP-UP DC/DC REGULATORS FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ ■ ■ ■ The TC125/6 step-up Boost switching regulators fur­ nish output currents to a maximum of 80 mA (V|N = 2V, V o u t = 3V) with typical efficiencies above 80%. These

driver IC for IRF540 MOSFET

Abstract: charge pump mosfet driver external MIC5031BM IRF540 MOSFET n5822 IC503
Contextual Info: MIC5031 •HEHL High-Speed High-Side MOSFET Driver Preliminary Information General Description Features The MIC5031 M OSFET driver is designed to switch an N-channel enhancem ent-type M OSFET from a TTL control signal in a high-side switch application. The MIC5031 pro­

Contextual Info: 19-1075; R e v 0; 6 /9 6 jv \ / \ y a jv \ 5 V /3 .3 V or A djustable, 100% Duty-Cycle, High-Efficiency; Step-Down DC-DC Controllers Features ♦ Low Dropout Voltage These step-dow n controllers drive an external P-channel MOSFET, allowing design flexibility for a pplications

MS10105

Abstract: pc101 v8 M23D5 3.5 DC Jack C6799 APA2308 c7343 footprint RTL8101 MAX1907 D0b02
Contextual Info: 5 4 3 2 1 SOCKET 478 Banias 478 uFCPGA MS1010 BLOCK DIAGRAM Rev. 0C PAGE 3,4,5 D D SYS POWER FSB 400MHZ LCD DISPLAY PAGE 17 LVDS RAMDAC CRT DISPLAY PAGE 17 PAGE 16 200/266/333 MHz DDR SO-DIMM X2 PAGE 13,14,15 INTEL 855GME VIDEO BRIDGE TV-OUT CONNECTOR NORTH

216TQA6AVA12FG

Abstract: RS690T IT8712F 218S6ECLA21FG max8774gtl R61523 ATI RS690 ForteMedia FM34 ForteMedia FM36 amd SB600
Contextual Info: 4 3 2 AMD S1 PROCESSOR 638-Pin uFCPGA 638 EXTERNAL CLOCK GENERATOR ICS951462 LVDS CON 16 LVDS 32 UNBUFFERED DDR2 NEAR SODIMM 9,10 DDR II 400/533/667 UNBUFFERED DDR2 FAR SODIMM ATI NB - RS690T I2C I/F D 200-PIN DDR2 SODIMM 16x16 9,10 200-PIN DDR2 SODIMM CRT

SLB 9635

Abstract: I945G sc1470I ICS954310 MS1057 pll i945gm Yonah 478 alc882 1CN1212 SAMA5
Contextual Info: 5 4 3 2 1 MS1057 VER:0.B +3V +5V DC JACK & Selector Yonah 478 Page 3,4,5 D C B MAX 1999 Page 34 D VDDR +1_8VSUS +1_5VRUN Page 32 01:BLOCK DIAGRAM 02:PLATFORM 03:Yonah-1 CPU (HOST BUS) 04:Yonah-2 CPU (POWER/GND) 05:Yonah-3 06:i945GM-1 (HOST) 07:i945GM-2 (DMI/VGA)

rb40 bridge

Abstract: TPT50 RB152 RT113 rt842 RTL8101L cb311 bridge rb60 Socket AM2 micro-star
Contextual Info: 5 4 3 2 1 SYS POWER MS1022 BLOCK DIAGRAM Rev. 0A Dothan SOCKET 479 478 uFCPGA PAGE 3,4,5 D CHARGER VRAM DC JACK & SELECTOR +1.1/1.25V VGA Power +1.2V PCI-E Power HOST BUS PAGE 44 , 45 , 46 PAGE 33 FSB 400 / 533 MHz PAGE 34 +1.5V +1.8VDDRM SMDDR_VTERM OZ816

msi G31 crb

Abstract: sc413 2pc501 nvidia nb8 vga board APL5912 MS-1636 nvidia BGA OZ711SP1-1 10n400 Socket AM2
Contextual Info: A B C D E MS-1636 VER : 1.0 +3V , +5V TPI51120 DC JACK & Selector Merom Page 3,4 Page 40 1 2 3 1 +VTT 1.05V 01:BLOCK DIAGRAM 02:PLATFORM 03:Merom-1 CPU (HOST BUS) 04:Merom-2 CPU (POWER/GND) 05:i965PM-1 (HOST) CRT 06:i965PM-2 (DMI/VGA) RGB 07:i965PM-3 (DDR2)

ICS9LPRS906CGLF

Abstract: u711 MS1719 sd memory card socket TPS2231 intel g41 msi Socket AM2 M31-3904078-W03 rtl8111b bk51
Contextual Info: A B C MS-17191 VER : 2.0 D E Page 3,4 1 2 3 01 : BLOCK DIAGRAM 02 : PLATFORM 03 : Merom-1 HOST BUS 04 : Merom-2 (POWER/GND) 05 : CRESTLINE-1 (HOST BUS) 06 : CRESTLINE-2 (DMI/VGA) 07 : CRESTLINE-3 (DDR) 08 : CRESTLINE-4 (POWER-1) 09 : CRESTLINE-5 (POWER-2)