N-CHANNEL 100V 100A Search Results

JESD97

Abstract: STS3C2F100
Contextual Info: STS3C2F100 N-channel 100V - 0.110 Ω - 3A SO-8 Complementary pair STripFET Power MOSFET General features Type VDSS RDS on ID STS3C2F100(N-channel) 100V <0.145 3.0A STS3C2F100(P-channel) 100V <0.380 1.5A • Standard outline for easy automated surface

JESD97

Abstract: STS3C2F100
Contextual Info: STS3C2F100 N-channel 100V - 0.110 Ω - 3A SO-8 Complementary pair STripFET Power MOSFET General features Type VDSS RDS on ID STS3C2F100(N-channel) 100V <0.145 3.0A STS3C2F100(P-channel) 100V <0.380 1.5A • Standard outline for easy automated surface

75639P

Abstract: HUF75639P3 75639G 75639S HUF75639G3 HUF75639S3S HUF75639S3ST TB334
Contextual Info: HUF75639G3, HUF75639P3, HUF75639S3S Semiconductor Data Sheet April 1999 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs File Number 4477.5 Features • 56A, 100V These N-Channel power MOSFETs are manufactured using the innovative UltraFET process.

75639p

Abstract: 75639s 75639G 75639 HUFA75639G3 HUFA75639P3 HUFA75639S3S HUFA75639S3ST TB334
Contextual Info: HUFA75639G3, HUFA75639P3, HUFA75639S3S Data Sheet December 2001 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs Features • 56A, 100V These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology

40n10le

Abstract: F40N10LE 40A100V RF1S40N10LESM RF1S40N10LESM9A RFG40N10LE RFP40N10LE TB334 F40N10
Contextual Info: RFG40N10LE, RFP40N10LE, RF1S40N10LESM Data Sheet October 1999 40A, 100V, 0.040 Ohm, Logic Level N-Channel Power MOSFETs File Number 4061.5 Features • 40A, 100V These N-Channel enhancement mode power MOSFETs are manufactured using the latest manufacturing process

Contextual Info: HUF75639G3, HUF75639P3, HUF75639S3S Semiconductor Data Sheet June 1999 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs F ile N u m b er 4477.6 Features • 56A, 100V These N-Channel power MOSFETs are manufactured using the innovative UltraFET process.

2E12

Abstract: FRX130D FRX130H FRX130R
Contextual Info: FRX130D, FRX130R, FRX130H Radiation Hardened N-Channel Power MOSFETs April 1998 Features Description • 6A, 100V, rDS ON = 0.180Ω The Intersil has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings from 100V to

STS3C2F100

Contextual Info: STS3C2F100 N-CHANNEL 100V - 0.110 Ω - 3A SO-8 P-CHANNEL 100V - 0.320 Ω - 1.5A SO-8 COMPLEMENTARY PAIR STripFET POWER MOSFET TYPE VDSS RDS on ID STS3C2F100(N-Channel) STS3C2F100(P-Channel) 100 V 100 V < 0.145Ω < 0.380Ω 3.0 A 1.5 A • ■ ■ ■

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 19N10V Power MOSFET 100V N-Channel MOSFET „ DESCRIPTION The UTC 100V N-Channel enhancement mode power field effect transistors MOSFET are produced by UTC’s planar stripe, DMOS technology which has been tailored especially in the

75639p

Abstract: 75639g
Contextual Info: HUFA75639G3, HUFA75639P3, HUFA75639S3S TM Data Sheet November 2000 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs File Number 4961 Features • 56A, 100V These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology

ZXMHC10A07T8

Abstract: ZXMHC10A07T8TC ZXMHC10A07T8TA
Contextual Info: ZXMHC10A07T8 COMPLEMENTARY 100V ENHANCEMENT MODE MOSFET H-BRIDGE SUMMARY N-Channel = V BR DSS = 100V : RDS(on) = 0.7 ; ID = 1.4A P-Channel = V(BR)DSS = -100V : RDS(on) = 1.0 ; ID = -1.3A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that

2N6796

Abstract: TB334
Contextual Info: 2N6796 Data Sheet December 2001 8A, 100V, 0.180 Ohm, N-Channel Power MOSFET Features • 8A, 100V The 2N6796 is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor

BUZ72A

Abstract: TA17401 TB334
Contextual Info: BUZ72A Data Sheet December 2001 9A, 100V, 0.250 Ohm, N-Channel Power MOSFET Features • 9A, 100V This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers,

2E12

Abstract: FRX130D FRX130H FRX130R
Contextual Info: FRX130D, FRX130R, FRX130H Radiation Hardened N-Channel Power MOSFETs April 1998 Features Description • 6A, 100V, rDS ON = 0.180Ω The Intersil has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings from 100V to

19n10l

Abstract: Mosfet N-Channel 19N10, TO-251 19n10 mosfet 19N10G-TQ2-T 19N10G-TN3-R
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 19N10 Power MOSFET 100V N-Channel MOSFET „ DESCRIPTION The UTC 100V N-Channel enhancement mode power field effect transistors MOSFET are produced by UTC’s planar stripe, DMOS technology which has been tailored especially in the

19n10

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 19N10 Power MOSFET 100V N-Channel MOSFET „ DESCRIPTION The UTC 100V N-Channel enhancement mode power field effect transistors MOSFET are produced by UTC’s planar stripe, DMOS technology which has been tailored especially in the

75639p

Abstract: 75639 75639g 75639S 504E3 TB334 HUF75639G3 HUF75639P3 HUF75639S3S HUF75639S3ST
Contextual Info: HUF75639G3, HUF75639P3, HUF75639S3S Data Sheet October 1999 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs File Number 4477.7 Features • 56A, 100V These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology

75639G

Abstract: 75639P 75639S HUF75639G3 HUF75639P3 HUF75639S3S HUF75639S3ST TB334
Contextual Info: HUF75639G3, HUF75639P3, HUF75639S3S TM Data Sheet August 2000 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs File Number 4477.8 Features • 56A, 100V These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology

1E14

Abstract: 2E12 FRL130R4 JANSR2N7272
Contextual Info: JANSR2N7272 Formerly FRL130R4 8A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 8A, 100V, rDS ON = 0.180Ω The Intersil Corporation,has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings from

1E14

Abstract: 2E12 FRF150R4 JANSR2N7292
Contextual Info: JANSR2N7292 Formerly FRF150R4 25A, 100V, 0.070 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 25A, 100V, rDS ON = 0.070Ω The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings from

RFP22N10

Contextual Info: RFP22N10, RF1S22N10, RF1S22N10SM S E M I C O N D U C T O R 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs April 1998 Features Description • 22A, 100V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature

ifr110

Abstract: TA17441 IFU110 IRFR110 IRFU110 TB334
Contextual Info: IRFR110, IRFU110 Data Sheet 4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs January 2002 Features • 4.7A, 100V These are N-Channel enhancement mode silicon gate power field effect transistors designed, tested, and guaranteed to withstand a specified level of energy in the

IRFF110

Abstract: TA17441 TB334
Contextual Info: IRFF110 Data Sheet January 2002 3.5A, 100V, 0.600 Ohm, N-Channel Power MOSFET Features • 3.5A, 100V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

IRFD1Z3

Abstract: IRFD1Z0 TA17451 TB334
Contextual Info: IRFD1Z0, IRFD1Z1, IRFD1Z2, IRFD1Z3 Semiconductor 0.4A and 0.5A, 60V and 100V, 2.4 and 3.2 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 0.4A and 0.5A, 60V and 100V • Nanosecond Switching Speeds These are N-Channel enhancement mode silicon gate