19N10 Search Results
19N10 Price and Stock
Honeywell Sensing and Control 19N100PGBPLPressure Sensor Product product IC |
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19N100PGBPL | 73 | 2 |
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19N100PGBPL | Bulk | 2 |
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19N100PGBPL | 73 |
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19N100PGBPL | 73 | 3 |
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19N100PGBPL |
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onsemi FQD19N10LTM- Tape and Reel (Alt: FQD19N10LTM) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FQD19N10LTM | Tape & Reel | 115,000 | 18 Weeks | 2,500 |
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FQD19N10LTM | Tape & Reel | 2,063 | 100 |
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| FQD19N10LTM | Cut Tape | 2,063 | 1 |
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| FQD19N10LTM | Cut Tape | 2,500 |
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| FQD19N10LTM | Tape & Reel | 2,500 |
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| FQD19N10LTM | Tape & Reel | 2,500 |
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FQD19N10LTM | 6,238 | 1 |
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FQD19N10LTM | 1,460 | 1 |
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FQD19N10LTM | 18 Weeks | 2,500 |
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FQD19N10LTM | 13 Weeks | 2,500 |
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FQD19N10LTM | 14 Weeks | 2,500 |
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FQD19N10LTM | 929 |
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FQD19N10LTM | 1,700 |
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onsemi FQPF19N10N-Channel QFET? MOSFET 100V, 13.6A, 100m? - Rail/Tube (Alt: FQPF19N10) |
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FQPF19N10 | Tube | 2,000 |
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FQPF19N10 | 1 |
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FQPF19N10 | 787 |
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Glenair Inc 380DS019N1008DA3- Bulk (Alt: 380DS019N1008DA3) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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380DS019N1008DA3 | Bulk | 3 Weeks | 1 |
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380DS019N1008DA3 | Bulk | 1 |
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Glenair Inc 380FS019N1004DA3- Bulk (Alt: 380FS019N1004DA3) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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380FS019N1004DA3 | Bulk | 3 Weeks | 1 |
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380FS019N1004DA3 | Bulk | 1 |
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19N10 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 19N10 Power MOSFET 15.6A, 100V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 100V N-Channel enhancement mode power field effect transistors MOSFET are produced by UTC’s planar stripe, DMOS technology which has been tailored especially in the avalanche and |
Original |
19n10qw-r502-261 | |
19n10
Abstract: 19N10L Mosfet N-Channel 19N10, TO-251 POWER MOSFET Rise Time 261a
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19n10qw-r502-26119n10lmosfet n-channel 19n10, to-251+2 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 19N10 Power MOSFET 15.6A, 100V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 100V N-Channel enhancement mode power field effect transistors MOSFET are produced by UTC’s planar stripe, DMOS technology which has been tailored especially in the avalanche and |
Original |
19n10qw-r502-261 | |
Mosfet N-Channel 19N10, TO-251
Abstract: 19n10 19N10L-TM3-T 19n10l 19N10G-TN3-R IS156 100V n-channel MOSFET
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19n10qw-r502-261mosfet n-channel 19n10, to-25119n10l-tm3-t+4 | |
19n10l
Abstract: Mosfet N-Channel 19N10, TO-251 19n10 mosfet 19N10G-TQ2-T 19N10G-TN3-R
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19n10qw-r502-26119n10lmosfet n-channel 19n10, to-251+3 | |
19n10Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 19N10 Power MOSFET 100V N-Channel MOSFET DESCRIPTION The UTC 100V N-Channel enhancement mode power field effect transistors MOSFET are produced by UTC’s planar stripe, DMOS technology which has been tailored especially in the |
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19n10qw-r502-261 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 19N10V Power MOSFET 100V N-Channel MOSFET DESCRIPTION The UTC 100V N-Channel enhancement mode power field effect transistors MOSFET are produced by UTC’s planar stripe, DMOS technology which has been tailored especially in the |
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19n10vqw-r502-914 | |
Mosfet N-Channel 19N10, TO-251
Abstract: 19n10l 19N10
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19n10qw-r502-261mosfet n-channel 19n10, to-25119n10l | |
EATON CM20A
Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
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eaton cm20aa5 gne mosfethall sensor 44e 4022n8491+6 |