19N10L Search Results
19N10L Price and Stock
onsemi FQD19N10LTMTransistor: N-MOSFET; unipolar; 100V; 9.8A; 50W; DPAK |
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FQD19N10LTM | 1,460 | 1 |
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FQD19N10LTM | Tape & Reel | 112,500 | 18 Weeks | 2,500 |
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| FQD19N10LTM | Tape & Reel | 5,000 |
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FQD19N10LTM | Cut Tape | 2,063 | 1 |
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| FQD19N10LTM | Tape & Reel | 2,063 | 100 |
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| FQD19N10LTM | Tape & Reel | 2,500 |
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| FQD19N10LTM | Cut Tape | 2,500 |
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| FQD19N10LTM | Tape & Reel | 2,500 |
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FQD19N10LTM | 6,238 | 1 |
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FQD19N10LTM | 18 Weeks | 2,500 |
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FQD19N10LTM | 13 Weeks | 2,500 |
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FQD19N10LTM | 14 Weeks | 2,500 |
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FQD19N10LTM | 929 |
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FQD19N10LTM | 1,710 | 1 |
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FQD19N10LTM | 1,700 |
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Cyg Wayon Circuit Protection Co Ltd WMB119N10LG2Transistor: N-MOSFET; unipolar; 100V; 50A; Idm: 148A; 75W |
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WMB119N10LG2 | 100 | 1 |
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Cyg Wayon Circuit Protection Co Ltd WMS119N10LG2Transistor: N-MOSFET; unipolar; 100V; 11.5A; Idm: 38A; 3W; SOP8 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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WMS119N10LG2 | 90 | 1 |
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Cyg Wayon Circuit Protection Co Ltd WMP119N10LG2Transistor: N-MOSFET; unipolar; 100V; 55A; Idm: 220A; 65.8W; TO251 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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WMP119N10LG2 | 90 | 1 |
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Cyg Wayon Circuit Protection Co Ltd WMQ119N10LG2Transistor: N-MOSFET; unipolar; 100V; 42A; Idm: 151A; 42W |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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WMQ119N10LG2 | 68 | 1 |
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19N10L Datasheets Context Search
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 19N10 Power MOSFET 15.6A, 100V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 100V N-Channel enhancement mode power field effect transistors MOSFET are produced by UTC’s planar stripe, DMOS technology which has been tailored especially in the avalanche and |
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19n10qw-r502-261 | |
19n10
Abstract: 19N10L Mosfet N-Channel 19N10, TO-251 POWER MOSFET Rise Time 261a
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19n10qw-r502-26119n10lmosfet n-channel 19n10, to-251+2 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 19N10 Power MOSFET 15.6A, 100V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 100V N-Channel enhancement mode power field effect transistors MOSFET are produced by UTC’s planar stripe, DMOS technology which has been tailored especially in the avalanche and |
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19n10qw-r502-261 | |
Mosfet N-Channel 19N10, TO-251
Abstract: 19n10 19N10L-TM3-T 19n10l 19N10G-TN3-R IS156 100V n-channel MOSFET
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19n10qw-r502-261mosfet n-channel 19n10, to-25119n10l-tm3-t+4 | |
19n10l
Abstract: Mosfet N-Channel 19N10, TO-251 19n10 mosfet 19N10G-TQ2-T 19N10G-TN3-R
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19n10qw-r502-26119n10lmosfet n-channel 19n10, to-251+3 | |
19n10Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 19N10 Power MOSFET 100V N-Channel MOSFET DESCRIPTION The UTC 100V N-Channel enhancement mode power field effect transistors MOSFET are produced by UTC’s planar stripe, DMOS technology which has been tailored especially in the |
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19n10qw-r502-261 | |
Mosfet N-Channel 19N10, TO-251
Abstract: 19n10l 19N10
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19n10qw-r502-261mosfet n-channel 19n10, to-25119n10l |