MTP10 Search Results

AN569

Abstract: MTP10N10EL
Contextual Info: MTP10N10EL Preferred Device Power MOSFET 10 Amps, 100 Volts, Logic Level N–Channel TO–220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for

MTP10N60E7-D

Abstract: AN569 MTP10N60E7 MTP10n60 MTP10N60E
Contextual Info: MTP10N60E7 Preferred Device Advance Information TMOS 7 E-FET  High Energy Power FET N–Channel Enhancement–Mode Silicon Gate http://onsemi.com This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient

Contextual Info: MTP10N10E Preferred Device Power MOSFET 10 Amps, 100 Volts N−Channel TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers drain−to−source diodes with fast recovery times. Designed for

Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: MTP10N40 CASE OUTLINE: TO-220AB HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:

DJ05AH

Abstract: TMOS power FET MTM10N25 Zener diode wz 210 MTP10N25 ITP10N Nippon capacitors
Contextual Info: Order this document by MTM10N25/D MTM10N25 MTP10N25 Designer’s Data Sheet 10 AM PERE N-CHANNEL TM O S POWER FET N -C H A N N E L E N H A N C E M E N T M O D E S IL IC O N G A T E T M O S P O W E R FIE LD EF F E C T T R A N S IS T O R rD S o n = 0.45 O H M

MTX310EW

Abstract: GR-253 MTRX192L mtx31 OIF-SFI4-01 MTX510EW mtx310
Contextual Info: MTP103 MTP103, Transponder Applications Telecommunications: Multiplex’s MTP103 transponder incorporates its MTRX192L 10Gb/s photoreceiver with an integrated limiting amplifier and its MTX-EML optical transmitter

TP10N15L

Abstract: 10N12L 10N15L TO-220AB Package P10N15L TP10N12L TP10N12 158SC
Contextual Info: MOTOROLA SC IME D XSTRS/R F I fc.3 t,?a54 QG1 QD3 ci 0 1 7V 3 7 -1 / MOTOROLA • SEM ICO NDUCTOR TECHNICAL DATA M TM 10N 12L M TM 10N 15L MTP10IM12L M T P 10N 15L Designer's Data Sheet Pow er Field Effect Transistors N-Channel Enhancement-Mode Silicon Gate TMOS

10n40e

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTP10N40E TMOS E-FET™ High Energy Power FET N-Channel Enhancement-Mode Silicon Gate T h is a d v a n c e d high v o lta g e TM O S E -F E T is d e s ig n e d to withstand high energy in the avalanche mode and switch efficiently.

MTP10N06E

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MTM10N06E MTP10N06E Designer's Data Sheet T M O S IV P o w er Field E ffe c t Transistors N-Channel Enhancement-Mode Silicon Gate TMOS POWER FETs 10 AMPERES This advanced " E " series o f TM OS p o w e r MOSFETs is desig n ed to w ith s ta n d high

IRF520

Abstract: IRF120 10n10 circuit diagram irf520 mtp10n10 irf5205 MTP10N08 IRF121 IRF122 IRF123
Contextual Info: — = = ^ - = fl4 D Ë f â 4b*11,74 Q0E?aS 4 □ 3469674 FAIRCHILD SEMICONDUCTOR 84D 2 7 85 4 D IRF120-123/IRF520-523 MTP10N08/10N10 N-Channel Power M O SFET s, 11 A, 60-100 V F A IR C H IL D A Schlumberger Company Power And Discrete Division Description

Contextual Info: MOTOROLA Order this document by MTP10N10EL/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTP10N10EL Logic Level TMOS E-FET ™ Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This advanced TMOS power FET is designed to withstand high

Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: MTP10N40E CASE OUTLINE: TO-220AB HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:

MTP10N10ELG

Abstract: AN569 MTP10N10EL
Contextual Info: MTP10N10EL Preferred Device Power MOSFET 10 A, 100 V, Logic Level, N−Channel TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for

MTP10N06E

Abstract: 221A-04 72SM AN569 MTM10N06E evod
Contextual Info: IM E D I MOTOROLA SC X ST R S /R F MOTOROLA • I b3t,72SM 00^0033 T | 7 3 3 7 - a SEMICONDUCTOR TECHNICAL DATA MTM10N06E MTP10N06E Designer's Data Sheet TM OS IV Pow er Field Effect Transistors N-Channel Enhancement-Mode Silicon Gate T M O S PO W ER F ET s

TP10N

Contextual Info: MOTOROLA Order this document by MTP10N40E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP10N40E TMOS E-FET™ High Energy Power FET N-Channel Enhancement-Mode Silicon Gate T his a d va n ce d high v o lta g e T M O S E -F E T is d e s ig n e d to

mtp25n06

Abstract: MTP12P05 MTP3055A MTP14N05A BUZ11 motorola MTP15N06 BUZ11 MTP5N05 T0-225AA MTP15N05
Contextual Info: POWER TRANSISTORS — TMOS PLASTIC continued Plastic TMOS Power MOSFETs — T0-220AB (continued) C A S E 221A-02 VBR(DSS) (Volts) Min (Ohms) Max (Amp) 60 0.4 4 F'D @ TC = 25°C (Watts) Max IRF523 7 40 IRF521 8 Device 0.3 6 MTP12P06* 12 0.28 5 MTP10N06 10

Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: MTP10N35 CASE OUTLINE: TO-220AB HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:

Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: MTP10N25 CASE OUTLINE: TO-220AB HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:

MTP10N10E

Abstract: 2N3904 AN569
Contextual Info: MTP10N10E Preferred Device Power MOSFET 10 Amps, 100 Volts N–Channel TO–220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers drain–to–source diodes with fast recovery times. Designed for

MTX310EW

Abstract: MTX510EW GR-253 MTRX192L 10 gb laser diode mtx31 lvds TX mtx310 300pin msa dwdm 300pin pinout
Contextual Info: Preliminary Data Sheet MTP103 MTP103, Transponder Applications Telecommunications: Multiplex’s MTP103 transponder incorporates its MTRX192L 10Gb/s photoreceiver with an integrated limiting amplifier and its MTX-EML optical transmitter

Contextual Info: MTP10N10EL Preferred Device Power MOSFET 10 A, 100 V, Logic Level, N−Channel TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for

MTP10N40E

Abstract: motorola an569 thermal 2N3904 AN569
Contextual Info: MOTOROLA Order this document by MTP10N40E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. High Energy Power FET Designer's MTP10N40E N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 10 AMPERES 400 VOLTS RDS on = 0.55 OHMS This advanced high voltage TMOS E–FET is designed to

DJ05AH

Abstract: MTM10N25 MTP10N25 MTM10N OSS260 300 volt 5 ampere mosfet transistor c180 o
Contextual Info: MTM10N25 M O TO R O LA D e s i g n e r * » D u l a MTP10N25 S h c *c *t 10 A M P E R E N -C H A N N E L T M O S P O W E R N C H A N N E L E N H A N C E M E N T M O D E S IL IC O N G A T E T M O S P O W E R F IE L D E F F E C T T R A N S IS T O R '0 * o « 0

MTP10N10M

Abstract: Current Mirror FET Motorola 3-326 transistor mosfet current mirror sensefet 25CC AN569 MC33034 MC34129 MM614
Contextual Info: MOTOROLA SC XSTRS/R F bêt D • fc,3b7254 DGTft 72G 771 « f lO T b MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA MTP10N10M Advance Information P o w e r Field E ffe c t T ra n s is to r N-Channel Enhancement-Mode Silicon Gate w ith Current Sensing Capability