MTM10N Search Results

MTM20N08

Abstract: MTM35N06 IRF141 IRF143 MTM10N06 MTM55N10 MTM35N05 MTM60N05 IRF150 MTM10N08
Contextual Info: POWER TRANSISTORS — TMOS METAL continued Metal TMOS Power MOSFETs — TO-204AA (continued) CASE 1-04 and CASE 1-05 @ ID VBR(DSS) (Volts) Min (Ohms) Max (Amp) 100 0.055 20 0.04 27.5 0.5 4 80 rDS(on) Device 0.4 40 150 55 250 MTM8N08 8 75 0.33 5 MTM10N08

DJ05AH

Abstract: TMOS power FET MTM10N25 Zener diode wz 210 MTP10N25 ITP10N Nippon capacitors
Contextual Info: Order this document by MTM10N25/D MTM10N25 MTP10N25 Designer’s Data Sheet 10 AM PERE N-CHANNEL TM O S POWER FET N -C H A N N E L E N H A N C E M E N T M O D E S IL IC O N G A T E T M O S P O W E R FIE LD EF F E C T T R A N S IS T O R rD S o n = 0.45 O H M

MTP10N06E

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MTM10N06E MTP10N06E Designer's Data Sheet T M O S IV P o w er Field E ffe c t Transistors N-Channel Enhancement-Mode Silicon Gate TMOS POWER FETs 10 AMPERES This advanced " E " series o f TM OS p o w e r MOSFETs is desig n ed to w ith s ta n d high

MTM20N08

Abstract: MTP2P45 MTM35N05 IRF123 IRF150 MTM10N08 MTM12N08 MTM12P08 MTM25N08 MTM55N08
Contextual Info: POWER TRANSISTORS — TMOS METAL continued Metal TMOS Power MOSFETs — TO-204AA (continued) CASE 1-04 and CASE 1-05 rDS(on) @ ID VBR(DSS) (Volts) Min (Ohms) Max (Amp) 100 0.055 20 0.04 27.5 0.5 4 80 Device 0.4 40 150 55 250 MTM8N08 8 75 0.33 5 MTM10N08

MTP10N06E

Abstract: 221A-04 72SM AN569 MTM10N06E evod
Contextual Info: IM E D I MOTOROLA SC X ST R S /R F MOTOROLA • I b3t,72SM 00^0033 T | 7 3 3 7 - a SEMICONDUCTOR TECHNICAL DATA MTM10N06E MTP10N06E Designer's Data Sheet TM OS IV Pow er Field Effect Transistors N-Channel Enhancement-Mode Silicon Gate T M O S PO W ER F ET s

Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TYPE: MTM10N25 TO-204AA (TO-3) HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:

diode 1000V 10a

Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TYPE: MTM10N100E TO-204AA (TO-3) HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:

MTP3055A

Abstract: MTM12N06 mtp25n06 MTM20N08 irf150 MTH8P20 MTM35N05 MTP2P45 MTM10N05 BUZ11
Contextual Info: POWER TRANSISTORS — TMOS METAL continued Metal TMOS Power MOSFETs — TO-204AA (continued) CASE 1-04 and CASE 1-05 @ ID VBR(DSS) (Volts) Min (Ohms) Max (Amp) 100 0.055 20 0.04 27.5 0.5 4 80 rDS(on) Device 0.4 40 150 55 250 MTM8N08 8 75 0.33 5 MTM10N08

MTM10N06E

Abstract: 2N3904 AN569 MTP10N06E
Contextual Info: Order this data sheet by MTM10N06E/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet TMOS IV Power Field E ffect Transistors N-Channel Enhancem ent Mode Silicon Gate TMOS POWER FETs 10 AMPERES This advanced "E" series of T M O S power MOSFETs is designed to withstand high

DJ05AH

Abstract: MTM10N25 MTP10N25 MTM10N OSS260 300 volt 5 ampere mosfet transistor c180 o
Contextual Info: MTM10N25 M O TO R O LA D e s i g n e r * » D u l a MTP10N25 S h c *c *t 10 A M P E R E N -C H A N N E L T M O S P O W E R N C H A N N E L E N H A N C E M E N T M O D E S IL IC O N G A T E T M O S P O W E R F IE L D E F F E C T T R A N S IS T O R '0 * o « 0

motorola an569 thermal

Abstract: diode zener motorola MTM10N100E 2N3904 AN569 AN569 in Motorola Power Applications
Contextual Info: Order this data sheet by MTM10N100E/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet TMOS E-FET High Energy Power FET TMOS POWER FET 10 AMPERES rDS on = 1-2 OHMS 1000 VOLTS N-Ctiannel Enhancem ent-Mode Silicon Gate This advanced high voltage TMOS E-FET is designed to with­

10N25

Contextual Info: MOTOROLA SC 14E D X S T R S /R F b 3 b 7 a s 4 0 010 04 4 4 1 r - 3 Ÿ - / 3 MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MTM10N25 MTP10N25 Designer's Data Sheet Pow er Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TM OS TMOS POWER FETs 10 AMPERES

MTP10N15L

Abstract: MTM10N15L 10N15L MTM10N12L 10n15 MTP10N12L Motorola TMOS Power FET P-Channel
Contextual Info: Order this data sheet by MTM10N12L/D MOTOROLA • I SEM ICONDUCTOR h h h h TECHNICAL DATA MTM10N12L MTM10N15L MTP10N12L MTP10N15L Designer's Data Sheet Pow er Field Effect Transistors N-Channel Enhancem ent M od e Silico n Gate T M O S These Logic Level TMOS Power FETs are designed for high

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

MFE9200

Abstract: BUZ84A BUZ90 equivalent IRF150 MOSFET AMP circuit BUZ35S MTP40N06M IRFZ22 mosfet 1RF620 MTM12N10L MTP25N10E
Contextual Info: MOTOROLA SC XSTRS/R IM E F D | b3b?254 O O fl'ìB n 1 | Selection by Package by contacting a Motorola sale office In your area or by con­ tacting a Motorola Literature Distribution Center listed on the back cover. Order the disk by requesting DK101/D. The product listed in Tables t through 22 have been com­

TP10N15L

Abstract: 10N12L 10N15L TO-220AB Package P10N15L TP10N12L TP10N12 158SC
Contextual Info: MOTOROLA SC IME D XSTRS/R F I fc.3 t,?a54 QG1 QD3 ci 0 1 7V 3 7 -1 / MOTOROLA • SEM ICO NDUCTOR TECHNICAL DATA M TM 10N 12L M TM 10N 15L MTP10IM12L M T P 10N 15L Designer's Data Sheet Pow er Field Effect Transistors N-Channel Enhancement-Mode Silicon Gate TMOS

MTM6N60

Abstract: MTM6N85 MTM7N12 MTM7N20 MTM7N45 MTM8N08 MTM8N12
Contextual Info: - 283 f §Ü g tt Vds or % Vg s V Iq s s Pd Id Id s s Vg s (V) (*) (A) th) M 4# ft D s (on) Vd s = '14 ( T a = 2 5 iC ) Io(on) g fs Ciss Coss Crss VG S =0 Vg s * /CH * /CH Vd g * (Ta= 25'C) ma x min CnA) Vg s (V) Vd s (V) Cm a) (V) (max) Id (mA) (V) ♦typ

1RFZ40

Abstract: 1RF150 MTP25N10E mth7n50 Transistor MTP35N06E BUZ80a equivalent buz90 equivalent MTP40N06M MFE9200 MTH7N50
Contextual Info: MOTOROLA SC X S T R S /R IME D | F b3b?2S4 Q O fl' iB n 1 | J l 9 / - 6 0 Selection by Package The product listed in Tables t through 22 have been com­ piled on an IBM or compatible personal computer disk for quick selection of product. This versatile disk may be obtained

20N15

Abstract: 35n05 mje13002 to92 ur3060 AN803 motorola 2N6823 isolated dc-dc mc34063 mje12007 Motorola Switchmode 1 special
Contextual Info: C O N TE N TS Page What Everyone Should Know About Switching Power Supplies In tro du ctio n. Comparison w ith Linear Regulations.

IRFD1Z3 equivalent

Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
Contextual Info: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not

half bridge TL494

Abstract: sine wave inverter tl494 circuit diagram UC3842 smps design with TL431 EI - 33c TRANSFORMER iw 1688 philips surface mount zener diode v6 smps lead acid battery charger schematic tl494 lm324 dc to ac inverters 2N3055 TRANSISTOR smps with uc3842 and tl431
Contextual Info: HB206/D Rev. 4, Feb-2002 Linear & Switching Voltage Regulator Handbook ON Semiconductor ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does

10N15L

Abstract: 10N12L mtp10n12 MTM10N15L p10n15l
Contextual Info: MOTOROLA • i SEM ICO NDUCTOR TECHNICAL DATA M TM 10N 12L M TM 10N 15L M T P 10N 12L M T P 10N 15L Designer's Data Sheet P o w er Field E ffe c t Transistors N-Channel Enhancem ent-M ode Silicon G ate TM O S T h e s e L o g ic L e ve l T M O S P o w e r FETs a re d e s ig n e d fo r h ig h

MTM12N20

Abstract: MTM15N40 MTM12N06 MTM12N08 MTM12N10 MTM12N18 MTM12P05 MTM12P08 M1M1 MTM20N08
Contextual Info: - 284 - f m £ 4t £ ÏS JK % £ tè Ta=25tï ï Vd s or ? Vd g )]/ (V) Vg s Pd Id * / CH (V) (A) I gss V g s th) I dss * /CH (H O min (nA) Vg s (V) Vd s (V) (m a ) max )d (piA) (V) (V) % W t± fè FD s(o n ,i Vi)S= Vg s (Ta=25tD) Ip(on) Ciss g fs Coss Crss