10CTC Search Results

KMF350

Contextual Info: SP EC IFIC A TIO N S VOLTAGE 5 0 0 V a c FREQ U EN C Y 5 0 / 6 0 H z C U RR EN T 5 0 A @ 40"C TEM PERA T U RE - 2 5 TO 10CTC LEA KA G E C U RR EN T 9 0 m A @ 5 0 0 V 50H z HUMIDITY 9 0 % RH N O N -C O N D E N SIN G VIBRATION 1 0 - 2 0 0 H Z 1.8G SU RG E 4 0 0 0 V p k 1.2/50jus

X167

Contextual Info: 167 x_ J 32 i C rSl o o o l O O O SPECIFICATIONS VOLTAGE 500Vac FREQUENCY 5 0 /6 0 H z CURRENT 10 A @ 40"C TEMPERATURE - 2 5 TO 10CTC LEAKAGE CURRENT 2 1 m A @ 5 0 0 V 5 0 H z HUMIDITY 90% RH N O N -C O N D E N S IN G VIBRATION 1 0 —2 0 0 H z 1.8G SURGE 4 5 0 0 V p k 1 . 2 / 5 0 ju s

Contextual Info: SP EC IFIC A TIO N S VOLTAGE 5 0 0 V a c FREQ U EN C Y 5 0 / 6 0 H z C U RR EN T 3 6 A @ 40"C TEM PERA T U RE - 2 5 TO 10CTC LEA KA G E C U RR EN T 4 2 m A @ 5 0 0 V 50H z HUMIDITY 9 0 % RH N O N -C O N D E N SIN G VIBRATION 1 0 - 2 0 0 H Z 1.8G SU RG E 4 0 0 0 V p k 1.2/50jus

Contextual Info: •HANDLING PRECAUTIONS A Types Lam ps/flat p a ck a g e s Soldering Iron Reflow soldering Dip soldering Tem perature at tip of iron: Pre-heating: 10CTC max. R e sin surface 300°C max. temperature 6 0 sec. max. (30 W max.) Bath tem perature: 260 C max.

KMF318

Abstract: M06G KMF318-GS
Contextual Info: 7 •217- £ SPECIFICATIONS m y 42 VOLTAGE 500Vac FREQUENCY 5 0 /60H z CURRENT 18A @ 40"C TEMPERATURE - 2 5 TO 10CTC LEAKAGE CURRENT 30m A @ 50 0 V 50Hz HUMIDITY 9 0 % RH N O N-CONDENSING VIBRATION 10— 200H z 1.8G SURGE 4500Vpk 1.2/50jus ELECTRIC STRENGTH 2250Vac/1 min.

POWER MOSFET Rise Time 1000V NS

Abstract: MOSFET 1000v 30a inverter circuit 200v to 100v mosfet 10a 500v mosfet 400 V 10A OM9027SP1 OM9028SP1 OM9029SP1 OM9030SP1 OM9Q27SP1
Contextual Info: OM9027SP1 OM9029SP1 OM9Q28SP1 OM9030SP1 UNCOMMITTED POWER MOSFET AND HIGH SPEED RECTIFIER IN 6-PIN PACKAGE 100V Thru 1000V, 4A To 30A Power MOSFET And High Speed Rectifier In One Package FEATURES • • • • • M O S F E T And Common Cathode Rectifier In O ne Package

SAB 82258

Abstract: sab82257
Contextual Info: 4 7E D Device Specifications • fiSBSbGS SIEI1ENS DD330S1 1 « S IE G AKTI ENGESELLSCHAF Preliminary T - « 3 - 3 3 - l et SAB 82257 High-Performance DMA Controller for 16-Bit Microcomputer Systems SAB 82257 SAB 82257-6 8 MHz 6 MHz • • • • 16 Mbytes addressing range

smd marking YK

Abstract: 208H smd 1309
Contextual Info: 2. Sch em atic: 1. M echanical Dim ensions: 6 o- 3T 2T 4 3T o- 3. E lectrical Specification s: 25°C c 3.50 Max F req u en cy Insertion Range: 2 . 0 —2 8 0 M H z Loss: 3dB @ 2 .0 —2 8 0 M H z 2dB @ 3 .0 —1 5 0 M H z Ï 2Î 1 dB @ 5 .0 —10 0 M H z

pcm1700u

Contextual Info: B U R R -B R O W N •b PCM1700U PCM1700P ! b Dual 18-Bit Monolithic Audio DIGITAL-TO-ANALOG CONVERTER FEATURES DESCRIPTION • DUAL 18-BIT LOW-POWER MONOLITHIC AUDIO D/A CONVERTER • VERY LOW MAX THD+N: -92dB Without External Adjust • CO-PHASE, GLITCH-FREE +3V OR

l3103s

Contextual Info: 5 Bit Synchronous CPU Controller with Power Good and Current Limit Description The CS-5166 is a synchronous dual NFET Buck Regulator Controller. It is designed to pow­ er the core logic of the latest high performance CPUs. It uses the V2 control method to achieve the

IRF3710 equivalent

Contextual Info: International IO R Rectifi Of_ PRELIMINARY pd-9.i387a IRFI3710 HEXFET Power MOSFET • • • • • Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated V qss = 100V

irl3803

Abstract: diode SR 315
Contextual Info: P D - 9.1301 International [tcr]Rectifier IRL3803 PRELIMINARY HEXFET Power MOSFET • • • • • • • Logic-Level Gate Drive Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated

Contextual Info: P D -9.1341 International Hk ]Rectifier IRF540N PRELIMINARY HEXFET Power MOSFET • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated V dss = 100V ^DS on = 0.052Q Id = Description

Contextual Info: 19-2454; Rev 1; 8/92 , CMOS 12-Bit B uffered M ultiplying D/A C onverter 1.1 This specification covers the detail requirements for a monolithic, CMOS, 12-bit multiplying digitalto-analog converter with on-board data latches. It is loaded by a single 12-bit-wide word and inter­

24CT

Contextual Info: Fa OPTOELECTRONICS AIGaAs INFRARED EMITTING DIODE QEC121/122 PACKAGE DIMENSIONS DESCRIPTION The Q E C 12X is an 88 0 nm AIG aA s LED en capsulated in a clear, purple tinted, plastic T-1 package. FEATURES • Tight production Eedistribution. ■ Steel lead fram es for im proved reliability in solder

S005302

Abstract: V6313
Contextual Info: / M R C H I I - P S E M IC O N D U C T O R tm MM74HC51 • MM74HC58 Dual AND-OR-lnvert Gate • I ual AND-OR Gate General Description Features T h e s e g a te s u tiliz e a d v a n c e d s ilic o n -g a te C M O S te c h n o lo g y • T y p ic a l p ro p a g a tio n d e la y : 10 ns

CLT2130

Abstract: CLT2160 CLT2150 CLT2140 T018
Contextual Info: L 40E » Ea DDD10D3 7 SENI "P41-UÌ FASCO INDS/ SENISYS CLT2130 CLT2140 CLT2150 G.r CLT2160 Silicon Planar Epitaxial Phototransistors ±.007 f— J83 N A — H J WINDOW [ I n t.o n H— ±.oio .0 4 0 i I .147 O I A _ 1 GENERAL DESCRIPTION — The Clairex CLT2130,

DS1402-DR8

Abstract: RJ11 female socket inverted 74HC125 diode 1n4002 advantages rj11 to db9 DS1961S DS1963S DS89C420 DS9093A DS9097U
Contextual Info: DSECASH eCash Evaluation Kit www.maxim-ic.com Figure 1. eCash Evaluation Board GENERAL DESCRIPTION The eCash Evaluation Kit demonstrates the speed, reliability, and security of a SHA-1 based iButton eCash system. The provided eCash debit board is a complete stand-alone module that will perform

Contextual Info: uuU SMJ3-13 LOW COST SURFACE MOUNT MIXER FOR SATCOM/WLL APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ LO: 3200 to 4200 MHz RF: 3200 to 4200 MHz IF: DC to 1000 MHz LO DRIVE: +13 dBm J-LEAD PACKAGE PATENT PENDING Outline Drawing Specifications* Characteristics Typical

Contextual Info: MOTOROLA SEM IC O N D U C T O R TECHNICAL DATA Advance Information PhotoDarlington Detector T h e M R D 9 1 1 Silicon photodetector is a high sensitivity, m ulti-purpose photodetector. Its side-looking package is designed for use in P C board mounted interruptive, reflective, and light level se n sin g applications. The device is ideally

d 379

Contextual Info: v C o rp . he diode experts SCOTTSDALE, A Z For more information call: SANTA ANA, CA 602 941-6300 SM 1.4KESDS.O thru SM 1.4KESD 170A SURFACE MOUNT Features 1 Protects S ensitive C ircu its From S h o rt D u ra tio n Fast Rise Tim e Tran sien ts such as Ele ctro -S tatic-D isch a rg e (ESD) or Electrical

contact bounce eliminator

Contextual Info: MC14490 < g MOTOROLA HEX CONTACT BOUNCE ELIMINATOR T h e M C 1 4 4 9 0 is c o n s t r u c t e d w i t h c o m p le m e n t a r y M O S e n h a n c e ­ m e n t m o d e d e v ic e s , a n d is u s e d f o r t h e e li m in a t i o n o f e x tr a n e o u s

bcx78

Abstract: BCX79-8
Contextual Info: MOTOROLA SC XSTRS/R 1EE F 0 I b3t,7E 54 OOÔS^Qb I r - a i- a / BCX78-7L,-8L,-9L,-1GL BCX79-7L,-8L,-9L,-10L - MAXIMUM RATINGS Sym bol BO X 78 BCX 79 U n it Collector-Em itter Voltage VCEO 32 45 Vdc Collector-B ase Voltage V CBO 32 45 Em itter-Base Voltage

Contextual Info: CHIP MULTILAYER DELAY LINE I l militala Chip Multilayer Delay Line L D H Series Delay Line for Speed Data Processing Equipment Work Stations and High Frequency Measuring Equipment This Delay Line is developed by applying ceramic multilayering and via hole technology. It consists of copper