MRF5S21130 Search Results

MRF5S21130H

Contextual Info: Freescale Semiconductor Technical Data MRF5S21130H Rev. 2, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21130HR3 MRF5S21130HSR3 Designed for W - CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

Contextual Info: MOTOROLA Order this document by MRF5S21130/D SEMICONDUCTOR TECHNICAL DATA MRF5S21130 RF Power Field Effect Transistors MRF5S21130R3 N–Channel Enhancement–Mode Lateral MOSFETs MRF5S21130S Designed for W–CDMA base station applications at frequencies from 2110

J949

Abstract: rf t 465B AN1955 MRF5S21130HR3 MRF5S21130HSR3 MRF5S21130H
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S21130H/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S21130HR3 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21130HSR3

MRF5S21130H

Abstract: 465B AN1955 MRF5S21130HR3 MRF5S21130HSR3
Contextual Info: Freescale Semiconductor Technical Data MRF5S21130H Rev. 3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21130HR3 MRF5S21130HSR3 Designed for W - CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

465B

Abstract: AN1955 MRF5S21130 MRF5S21130HR3 MRF5S21130HSR3 MRF5S21130R3 MRF5S21130SR3 J254
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S21130/D SEMICONDUCTOR TECHNICAL DATA MRF5S21130R3 and MRF5S21130SR3 replaced by MRF5S21130HR3 and MRF5S21130HSR3. “H” suffix indicates lower thermal resistance package. MRF5S21130R3 RF Power Field Effect Transistors MRF5S21130SR3

MRF5S21130H

Abstract: 465B AN1955 MRF5S21130HR3 MRF5S21130HSR3
Contextual Info: Freescale Semiconductor Technical Data MRF5S21130H Rev. 2, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21130HR3 MRF5S21130HSR3 Designed for W - CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

vishay mosfet MTBF

Abstract: 465B AN1955 MRF5S21130 MRF5S21130R3 MRF5S21130SR3
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S21130/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Freescale Semiconductor, Inc. RF Power Field Effect Transistors MRF5S21130R3 N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21130SR3

j949

Abstract: motorola 5420 J1175 J297 CAPACITOR chip mtbf
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF5S21130 RF Power Field Effect Transistors MRF5S21130R3 N–Channel Enhancement–Mode Lateral MOSFETs MRF5S21130S Designed for W–CDMA base station applications at frequencies from 2110 MRF5S21130SR3 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicaThe RF MOSFET Line

MRF5S21130H

Contextual Info: MOTOROLA Order this document by MRF5S21130H/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S21130HR3 N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21130HSR3 Designed for W - CDMA base station applications at frequencies from 2110

Contextual Info: MOTOROLA Order this document by MRF5S21130/D SEMICONDUCTOR TECHNICAL DATA MRF5S21130 RF Power Field Effect Transistors MRF5S21130R3 N–Channel Enhancement–Mode Lateral MOSFETs MRF5S21130S Designed for W–CDMA base station applications at frequencies from 2110

MRF5S21130H

Contextual Info: MOTOROLA Order this document by MRF5S21130H/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S21130HR3 N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21130HSR3 Designed for W - CDMA base station applications at frequencies from 2110

vishay mosfet MTBF

Contextual Info: MOTOROLA Order this document by MRF5S21130/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S21130R3 N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21130SR3 Designed for W - CDMA base station applications at frequencies from 2110

1812y224kxa

Abstract: J1175
Contextual Info: Freescale Semiconductor Technical Data Rev. 2, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21130HR3 MRF5S21130HSR3 Designed for W - CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S21130/D SEMICONDUCTOR TECHNICAL DATA MRF5S21130R3 and MRF5S21130SR3 replaced by MRF5S21130HR3 and MRF5S21130HSR3. “H” suffix indicates lower thermal resistance package. MRF5S21130R3 RF Power Field Effect Transistors MRF5S21130SR3

j949

Abstract: 465B MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3
Contextual Info: MOTOROLA Order this document by MRF5S21130/D SEMICONDUCTOR TECHNICAL DATA MRF5S21130 RF Power Field Effect Transistors MRF5S21130R3 N–Channel Enhancement–Mode Lateral MOSFETs MRF5S21130S Designed for W–CDMA base station applications at frequencies from 2110

BFG591 amplifier

Abstract: 5.8GHz Analog RF mmic MRF6Vp3450 nxp Standard Marking BLF6G21-10G FET 2N5459 RF LNB C band chipset radar 77 ghz sige 82 sot363-6 Dect antenna smd code marking ft sot23
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stripline directional couplers

Abstract: MRFP36030 MRF5S9080NB NONLINEAR MODEL LDMOS MRF377HR5 Product Selector Guide MRF1511NT1 ESD MC13820 MRF377HR3 MRF6S9045NBR1
Contextual Info: RF and IF Quarter 3, 2005 SG1009Q32005 Rev 0 What’s New! Market Product GSM/GPRS Cellular MMM6025 Cellular, GPS, ISM MC13820 TV Broadcast MRF377HR3, MRF377HR5 900 MHz Cellular Base Station MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MRF6S9125NR1, MRF6S9125NBR1, MRF6S9130HR3, MRF6S9130HSR3,

MC908GP32

Abstract: 9S12XHZ256 DSP56309VF100A 9S08DZ32 mpx6115 MXC300-30 xc912bc32 DSP56309AG100A MRF6VP2600H 9S08SG16
Contextual Info: Freescale Semiconductor Product Selector Guide Cross Reference Quarter 4, 2007 SG1000CRQ42007 Rev 0 Introduction The Freescale Semiconductor Product Selector Guide Cross-Reference provides a listing of all products documented in the eight Freescale Semiconductor Product Selector Guides. The Product Cross-Reference group lists new and existing

TRANSISTOR REPLACEMENT GUIDE

Abstract: FS Oncore hf modem ofdm bts 2140 1b data sheet ISO 1302 uhf linear amplifier module linear amplifier 470-860 amplifier mrf247 class AB hf bipolar FM LDMOS freescale transistor
Contextual Info: Quarter 4, 2004 SG1009Q42004 Rev 0 What’s New! Market Product 900 MHz Cellular Base Station MRF5S9070NR1, MRF5S9100MR1, MRF5S9100MBR1, MRF5S9100NR1, MRF5S9100NBR1, MRF5S9101MR1, MRF5S9101MBR1, MRF5S9101NR1, MRF5S9101NBR1, MRF9200LR3, MRF9200LSR3 CDMA 1.9 GHz Cellular Base Station

very simple walkie talkie circuit diagram

Abstract: blf278 models walkie talkie circuit diagram simple walkie talkie circuit diagram SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 BF245c spice model smd TRANSISTOR code marking 8K MOBILE jammer GSM 1800 MHZ BSS83 spice model smd TRANSISTOR code marking 7k sot23
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filter for GPS spice

Abstract: BLF578 diode smd marking BUF GP 750 BLF7G10-300p AX 2008 lqfp48 GP 809 DIODE BF1118 MPAL2731M15 bgu7051 BB 505 Varicap Diode
Contextual Info: RF手册第14版 用于高性能RF产品的应用和设计手册2010年5月 恩智浦半导体RF手册第14版 3 高性能RF适用于最高要求的应用 恩智浦RF手册令设计更简易 恩智浦RF手册–当今RF设计市场上最重要的参考工具之一–展示了我们从小信号到大功率

MPF102 spice model

Abstract: BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H
Contextual Info: RF Manual 15th edition Application and design manual for High Performance RF products May 2011 High Performance RF for the most demanding applications NXP’s RF Manual makes design work much easier NXP's RF Manual is one of the most important reference tools on the market for

double TRANSISTOR SMD MARKING CODE mc

Abstract: walkie talkie circuit diagram very simple walkie talkie circuit diagram smd TRANSISTOR code marking 8K smd m5 transistor 6-pin walkie talkie Transceiver IC mesfet lnb toshiba smd marking code transistor blf574 BLF578
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power transistors table

Abstract: MW6S010NR1 mrfe6s9060n MHW6342TN Motorola Microwave power Transistor "RF high power Amplifier" MRF6V2300N MRFG35010R1 MRF6P23190HR6 MRF373 PUSH PULL
Contextual Info: RF Products Freescale Semiconductor Selector Guide SG46 Rev. 34 6/2008 RF Product Selector Guide Offering a broad portfolio of RF products, Freescale Semiconductor primarily serves the wireless infrastructure, wireless subscriber, general purpose amplifier, broadcast and industrial markets. Freescale pioneered RF technology and continues to be the leader in the field by providing the quality,