465B Search Results

TOKO 5kmt

Abstract: 465BXS-009 Toko High frequency LC Filter triple tuned 465BXS-007 10-150MHz 465B 100MHZ
Contextual Info: Sheet1 High Frequency LC Filters 5KMW Double Tuned Filters 5KMT Triple Tuned Filter Frequency Range: 10-150MHz L: 0.03 ~ 50µH Q: 40 ~ 70 at 100MHz TOKO Part Number 465BXS-002 465BXS-003 465BXS-007 465BXS-009 465BXS-020 465BXS-034 Type 5KMW 5KMW 5KMT 5KMT

video iris

Abstract: CSB-465B 465B CSB465 465B ccd camera CCIR 4F14 WX62
Contextual Info: Model BLACK & WHITE CSB-465B HOUSED CAMERA CS -mount Model : CSB-465B CCIR 52 (W) x 62 (L) x 42 (H) mm housed camera Full Aluminium housing External sync. input Auto iris output Excellent cost / performance ratio Specifications Image sensor : Effective pixels :

465B

Abstract: 700B ARF465A ARF465B VK200-4B
Contextual Info: ARF465A 465B D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 300V 150W 60MHz The ARF465A and 465B comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 60 MHz.

ps2 power supply

Abstract: PWS-465-PQ CBL-0084 USB to Micro USB Cable
Contextual Info: Home Contact Us Search Advanced Search SuperChassis 733i-465B Products Chassis Mid-tower [ SC733i-465B ] Key Features 1. 465W High-efficiency Low Noise Power Supply 2. 4 x 3.5" Fixed Drive Bays Available Colors 3. 2 x 5.25" Drive Bays 4. 1 x 92mm Front Thermal Fan

Contextual Info: ARF465A 465B D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 300V 150W 60MHz The ARF465A and 465B comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 60 MHz.

Contextual Info: ARF465A G 465B(G) *G Denotes RoHS Compliant, Pb Free Terminal Finish TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 300V 150W 60MHz The ARF465A and 465B comprise a symmetric pair of common source RF power transistors designed for push-pull

465B

Abstract: 700B ARF465A ARF465B VK200-4B
Contextual Info: ARF465A 465B D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 300V 150W 60MHz The ARF465A and 465B comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 60 MHz.

465B

Abstract: TFS465B
Contextual Info: 465B.doc version 1.0 VI TELEFILTER 20.08.03 Filter specification TFS 465B 1/5 Measurement condition Ambient temperature: 23 °C Input power level: 0 dBm Terminating impedances: input: 50 Ω output: 50 Ω Characteristics Remark: The maximum of the pass band attenuation amax is defined as the insertion loss ae. The nominal frequency fN is fixed at 465,0 MHz without

MB91F467BA

Abstract: TP03010 FCR05 mb91f465 EPFR06 ROMS8-15 MB91V460 MB91460 4f p281 rc Oscillator
Contextual Info: FUJITSU SEMICONDUCTOR MB91F467BA/466BA/465BA/464BA preliminary datasheet MB91460 series European MCU Design Centre EMDC Fujitsu Microelectronics Europe GmbH Pittlerstr. 47 63225 Langen, Germany Fujitsu and Fujitsu Microelectronics Solutions Limited(FMSL)

MRF6S21140HR3

Abstract: MRF6S21140HSR3 AN1955 MRF6S21140H D2080 Nippon capacitors
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S21140H Rev. 5, 2/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier

TOKO 10EZ

Abstract: TOKO 5kmt 7KLT mc119 toko 5vfq BTKACBTKANSBTKENSBTKXNSCDF107BTOKO toko 7p 10EZ 79 5ccd toko MC136 toko
Contextual Info: 244 M lCMN Index TOKO Part No. Prefix TOKO Type - Page No. TOKO Part No. Prefix TOKO Type Page No. 7P HF 81 ABW07 162 ABW 07139,140 5VHS 161 5VHW 161 4FS 132 4FW 132 4 FT 132 5FS(LPF) 160

TOKO 5kmt

Abstract: 465BBXS-007 10-150MHz Toko High frequency LC Filter triple tuned 465BBXS-009 TOKO 5kmw 464BBX-003 465B 5KMT 465BBXS-007
Contextual Info: ISTO H O S Ä « skm w 149 5KM T High Frequency LC Filters 5KMW Double Tuned Filter 5KMT Triple Tuned Filter Frequency Range: 10-150MHz L: 0.03 ~ 50 iH 0 : 4 0 ~ 70 (at 100MHz 5KM W 5KM T 6.1 Max. 5.9 Max ; Unit, mm Features Unii: mm • Small and light,

80C17

Abstract: Intel 80188EB 270803 ts80c186eb20 80188eb processor 80L186EB tn80c186eb20 STC transistors K 2149 TN80C186EB20 equivalent
Contextual Info: 4ñSbl7S 013Sflfi7 HT3 bflE D INTEL CORP UP/PRPHLS p R iu iB o iM A O f t f in te i 80C186EB/80C188EB AND 80L186EB/80L188EB 16-BIT HIGH-INTEGRATION EMBEDDED PROCESSORS • Full Static Operation ■ True CMOS Inputs and Outputs ■ - 40°C to + 85°C Operating Temperature Range

INTEL Packaging Handbook

Abstract: 80C196MC N87C196 G1314 intel packaging handbook 240800 -20/intel packaging handbook 240800 V/intel packaging handbook 240800
Contextual Info: INTEL CORP UP/PRPHLS bôE D • 4fl2bl75 G 1 3 m ? l 515 ■ ITL1 PDBm LG W AG ^ in te l 8XC196MC INDUSTRIAL MOTOR CONTROL MICROCONTROLLER 87C196MC 16 Kbytes of On-Chip OTPROM* 83C196MC 16 Kbytes of On-Chip ROM High Performance CHMOS 16-Bit CPU 16 Kbytes of On-Chip OTPROM/ROM

RM73B2B

Abstract: 465B AN1955 MRF5S19130H MRF5S19130HR3 MRF5S19130HSR3 RM73B2
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF5S19130H Rev. 2, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier

J294

Abstract: 200B104MW 465B A114 A115 AN1955 JESD22 MRF7S19170HR3 MRF7S19170HSR3 MRF7S19170HS
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S19170H Rev. 0, 10/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S19170HR3 MRF7S19170HSR3 Designed for CDMA base station applications with frequencies from 1930 to

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6S9205H Rev. 0, 10/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRFE6S9205HR3 MRFE6S9205HSR3 Designed for broadband commercial and industrial applications with

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S19140H Rev. 5, 5/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S23140H Rev. 2, 12/2008 RF Power Field Effect Transistors MRF6S23140HR3 MRF6S23140HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2300 to

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6S9135H Rev. 1, 11/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRFE6S9135HR3 MRFE6S9135HSR3 Designed for broadband commercial and industrial applications with

Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S21150/D SEMICONDUCTOR TECHNICAL DATA MRF5S21150R3 and MRF5S21150SR3 replaced by MRF5S21150HR3 and MRF5S21150HSR3. “H” suffix indicates lower thermal resistance package. MRF5S21150R3 RF Power Field Effect Transistors MRF5S21150SR3

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S18170H Rev. 1, 12/2008 RF Power Field Effect Transistors MRF7S18170HR3 MRF7S18170HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1805 to

465B

Abstract: MRF5S19150 MRF5S19150R3 MRF5S19150S MRF5S19150SR3
Contextual Info: MOTOROLA Order this document by MRF5S19150/D SEMICONDUCTOR TECHNICAL DATA MRF5S19150 RF Power Field Effect Transistors MRF5S19150R3 N–Channel Enhancement–Mode Lateral MOSFETs MRF5S19150S Designed for PCN and PCS base station applications at frequencies from

smd transistor marking z8

Contextual Info: Freescale Semiconductor Technical Data MRF18090B Rev. 6, 12/2004 RF Power Field Effect Transistors MRF18090BR3 MRF18090BSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier