mpsa16
Abstract: motorola transistor 2N2907 BC237 motorola transistor dpak marking 350
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Chopper Transistor MPSA17 NPN Silicon Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RATINGS 1 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 40 Vdc Emitter – Base Voltage VEBO 15 Vdc Collector Current – Continuous
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mpsa17226aae218amsc1621t1+10msc2404msd1819amv1620mv1624mv1636mv1640mpsa16motorola transistor 2n2907bc237motorola transistor dpak marking 350
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NPN transistor to-92
Abstract: transistor TO-92 npn VEB-10V NPN transistor to-92 high gain To92 transistor
Contextual Info: MPSA17 TO-92 Transistor NPN TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features High V(BR)EBO : 12V MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCEO Collector-Ease Voltage 40 V VEBO Emitter-Base Voltage 12 V IC Collector Current -Continuous
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mpsa17100mhznpn transistor to-92transistor to-92 npn+3veb-10vnpn transistor to-92 high gainto92 transistor
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mpsa16 motorola
Contextual Info: MPSA16 MPSA17* M A X IM U M RATINGS Symbol MPS-A16MPS-A17 Unit Collector-Emitter Voltage VCEO 40 Vdc Emitter-Base Voltage V ebo Rating 12 15 Collector Current — Continuous >C 100 mAdc Total Device Dissipation a Ta = 25°C Derate above 25CC Pd 350 2.8 mW
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mps-a16mps-a17mpsa16mpsa17t0-226aa+3mps-a16mps-a17mpsa16 motorola
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Contextual Info: MPSA16 MPSA17* M A XIM U M RATINGS Rating Sym bol M P S -A 1 6 M P S-A 1 7 Unit Collector-Emitter Voltage v CEO 40 Vdc Emitter-Base Voltage v EBO Collector Current — Continuous 12 15 [C 100 mAdc Total Device Dissipation @ T ^ = 250C Derate above 25°C PD
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motorola transistor 263-1
Abstract: MPSA17
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Chopper Transistor NPN Silicon MPSA17 Motorola Preferred Device COLLECTOR 3 1 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector- Emitter Voltage VCEO 40 Vdc Emitter-Base Voltage vebo 15 Vdc Collector Current - Continuous
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mpsa17o-226aab3b72s5dgt340g+1motorola transistor 263-1
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mpsa16
Abstract: MPS-A16 MPSA17
Contextual Info: MOTOROLA Order this document by MPSA17/D SEMICONDUCTOR TECHNICAL DATA Chopper Transistor MPSA17 NPN Silicon Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RATINGS 1 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 40 Vdc Emitter – Base Voltage
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mpsa17/dmpsa17226aampsa16+1mps-a16
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MPSA17
Abstract: MPSA16 MPS-A16 MPS-A17
Contextual Info: MPSA16 MPSA17* M A X IM U M R A T IN G S Rating Sy m b o l M P S -A 1 6 M P S -A 1 7 Unit Collector-Emitter Voltage v CEO 40 Vdc Emitter-Base Voltage v EBO 12 I 15 !C 100 m Adc Total Device Dissipation @ T& = 25°C Derate above 25°C Pd 350 2.8 mW mW/°C Total Device Dissipation @ T c — 25°C
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mps-a16mps-a17mpsa16mpsa17o-226aa+2mps-a16mps-a17
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MPSA17
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors MPSA17 TRANSISTOR NPN TO-92 FEATURES High V(BR)EBO : 12V 1.EMITTER 2. BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCEO Collector-Ease Voltage
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mpsa17voltage150100mhz |
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motorola transistor 263-1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Chopper Transistor NPN Silicon MPSA17 M oto ro la P referred Device COLLECTOR 3 1 EMITTER M AXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 40 Vdc Emitter-Base Voltage vebo 15 Vdc Collector Current - Continuous
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mpsa17motorola transistor 263-1 |
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Contextual Info: MPSA16 MPSA17* M A X IM U M R ATINGS Symbol MPS-A16MPS-A17 Unit Collector-Emitter Voltage Rating v CEO 40 Vdc Emitter-Base Voltage v EBO 12 15 Collector Current — Continuous 'C 100 mAdc Total Device Dissipation a Ty\ = 25°C Derate above 25°C PD 350 2.8
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mpsa16mpsa17mps-a16mps-a17o-226aa+1psa16
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MC68B21CP
Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References
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sg379/d1n965brlzen15v1n751as+151n967brlzen18v1n751asrl1n968brlzen20vmc68b21cpxcm916x1cth16transistor marking code 12w sot-23sg379mc68b54pxc68hc805p18cdwmc68b50cpmc2830ne555nchn ne555n
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secos gmbh
Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
Contextual Info: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers
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sgsr809-asc-59sgsr809-bsgsr809-c+12sgsr809-dsgsr809-esecos gmbhc945 p 331 transistor npnsm2150amsm1150amc945 p 331 transistorsmbj11ca2sd2142sm4005assg8pzt649
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MMBF112L
Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty
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06050lmmbd914lbas16lbal99l+16mbav70lmbav99lmbav74bd2835xlmbd2836xlmmbd2837xlmmbf112lmfe521mmbf1122n3797 equivalentmfe131 equivalentmps5210bc557 sot238c448bc459cmfe211
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transistor mosfet buv18a
Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
Contextual Info: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9
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transistor mosfet buv18am143206evkmmbf4856lm358 ic+668hc05sc24telephone line interface circuit bc517mc68b54xc68hc705p9mpx100apbuv18a
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BC337 BC547
Abstract: MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM
Contextual Info: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the
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mdc5000t1mdc3105lt1bc337 bc547msb81t1+8mbt3904dw9t1marking 6aa sodmvam115automatic stabilizer circuit diagram range 210 to 250 voltszt751mbt3904dw9transistor 2n4125ct bc547 transistor pin diagram
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MSC2404
Abstract: MPF3821 BC237 MPS8093 BCY72 MMBF4856 MAD130P MPS3866 bcy71 ALTERNATIVE BSS72
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP RF Amplifier Transistor Surface Mount MSA1022-CT1 Motorola Preferred Device COLLECTOR 3 3 2 1 2 BASE 1 EMITTER MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage VCBO – 30 Vdc Collector–Emitter Voltage
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msa1022-ct1emitte218amsc1621t1msc2404+15msd1819amv1620mv1624mv1636mv1640mv1642mpf3821bc237mps8093bcy72mmbf4856mad130pmps3866bcy71 alternativebss72
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BF245
Abstract: BC237 MSC2404 mps8093 bf244 MSA1022 MSC2295-BT1 msc2295 MAD1107P MPS6568
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN RF Amplifier Transistors Surface Mount COLLECTOR 3 MSC2295-BT1 MSC2295-CT1 Motorola Preferred Devices 3 2 BASE 1 EMITTER 2 1 MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage V(BR)CBO 30
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msc2295-bt1msc2295-ct1msc1621t1msc2404+14msd1819amv1620mv1624mv1636mv1640mv1642bf245bc237mps8093bf244msa1022msc2295mad1107pmps6568
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k2645
Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt
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mk135mk136mk137mk138+16mk139mk140mk142mk145mk155157krk2645k4005u664bmosfet k4005mb8719transistor mosfet k4004sn16880nstk5392str451bc417
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EATON CM20A
Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid ing complete service, fast delivery and in-depth inventory. Our main
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eaton cm20aa5 gne mosfethall sensor 44e 4022n8491+6ftg 1087 striac bcr 10kmfeb3tsmd transistor marking 352asharp eia 577 sharp color tv schematic diagrammp-130 m mh-ce 10268
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stencil
Abstract: BC237 automatic heat detector project report BC393 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Schottky Barrier Diode BAT54T1 These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and
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bat54t1ju218amsc1621t1msc2404+10msd1819amv1620mv1624mv1636mv1640mv1642stencilbc237automatic heat detector project reportbc393 equivalent
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BC237
Abstract: level shifter 2N5401 2771 040 0002 MUN5214T1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN5211T1 SERIES NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device
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sc-70/sot-323spa218amsc1621t1msc2404+10msd1819amv1620mv1624mv1636mv1640mv1642bc237level shifter 2n54012771 040 0002mun5214t1
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bs170 replacement
Abstract: BC237 BC30 transistor K 2056
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Switching BS170 N–Channel — Enhancement 1 DRAIN 2 GATE 3 SOURCE MAXIMUM RATINGS 1 Rating Drain – Source Voltage Gate–Source Voltage — Continuous — Non–repetitive tp ≤ 50 µs Drain Current(1)
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bs170226aads218amsc1621t1+10msc2404msd1819amv1620mv1624mv1636mv1640bs170 replacementbc237bc30transistor k 2056
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transistor bc237 bc337
Abstract: replacement transistor BC337 bc337 TRANSISTOR equivalent bc338 equivalent BC337 TO-92 Generic BC337 circuit example BC160-16 BC337-25 "pin compatible" BC237 BC338 REPLACEMENT
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors NPN Silicon BC337,-16,-25,-40 BC338,-16,-25,-40 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC337 BC338 Unit Collector – Emitter Voltage VCEO 45 25 Vdc Collector – Base Voltage
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bc337bc338226aajunction218a+14msc1621t1msc2404msd1819amv1620transistor bc237 bc337replacement transistor bc337bc337 transistor equivalentbc338 equivalentbc337 to-92 genericbc337 circuit examplebc160-16bc337-25 "pin compatiblebc237bc338 replacement
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BC237
Abstract: MPS-A70 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor MPSA70 PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 CASE 29–04, STYLE 1 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO –40 Vdc Emitter – Base Voltage
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mpsa70226aacharacteri218amsc1621t1+8msc2404msd1819amv1620mv1624mv1636mv1640bc237mps-a70 equivalent
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