MPSa56 equivalent
Abstract: MPSa05 equivalent MPSa06 equivalent BC237 bc547 npn Mpsa92/MPSa56 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors NPN MPSA05 MPSA06* PNP MPSA55 MPSA56* COLLECTOR 3 COLLECTOR 3 2 BASE 2 BASE NPN PNP 1 EMITTER 1 EMITTER Voltage and current are negative for PNP transistors MAXIMUM RATINGS Symbol MPSA05 MPSA55 MPSA06
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mpsa05mpsa06mpsa55mpsa56+8ch218amsc1621t1mpsa56 equivalentmpsa05 equivalentmpsa06 equivalentbc237bc547 npnmpsa92/mpsa56 equivalent
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mpsa63 replace
Abstract: BC237 MPSA63 equivalent J111
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Transistors MPSA62 MPSA63 MPSA64 * PNP Silicon COLLECTOR 3 MPSA55, MPSA56 BASE 2 For Specifications, See MPSA05, MPSA06 Data *Motorola Preferred Device EMITTER 1 MAXIMUM RATINGS Symbol MPSA62 MPSA63 MPSA64 Unit
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mpsa62mpsa63mpsa64mpsa55+7mpsa56mpsa05mpsa06mpsa63 replacebc237mpsa63 equivalentj111
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XL1225 equivalent
Abstract: 2N3053 equivalent BF422 EQUIVALENT bc238 equivalent 2N6397 equivalent 2N5551 equivalent 2SB772 equivalent BC109 BC184 BC549 2sd880 equivalent BT169 equivalent
Contextual Info: Transistors, SCR, IC CROSS REFERENCE / EQUIVALENT TABLE R Cross Reference Table 1 / 13 INDUSTRY TYPE No. DC COMP. TYPE No. Cross Reference Table 2 / 13 PACKAGE INDUSTRY TYPE No. DC COMP. TYPE No. PACKAGE 2N2955 2N2955 TO-3 2SA952 2SA952 TO-92 2N3055 2N3055
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2n29552sa9522n30552sb1426+112n3417xl1225 equivalent2n3053 equivalentbf422 equivalentbc238 equivalent2n6397 equivalent2n5551 equivalent2sb772 equivalentbc109 bc184 bc5492sd880 equivalentbt169 equivalent
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AL102 ATES
Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible
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trans-611dt15212n2270bc107-182ks+16esc182kasesc182kbsesc1q8-183kseic183kbs8c183kcsbc109-184ksal102 ates2n2222a mpskr206ad149tis58tis88sft3532n24312n4265bfy29
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1N4937 SMD
Abstract: diode 1n4007 melf smd 2n5401 smd 1n4001 melf diode 1n4007 melf 2n2222a SOT223 1N4148 SOD-80 2n2222a SOT23 1N5819 SOD80 2N2369 SOT-23
Contextual Info: Leaded to Surface Mount Equivalents LEADED SMD CASE COMMENTS 1N 914 CMPD 914 CLL914 CMPD28:i6 CMPD28IÌ8 CMPD7000 BAS28 SOT-23 SOD-80 SOT-23 SOT-23 SOT-23 SOT-143 Single Switching Diode Leadless Switching Diode Dual, Common Anode Dual, Common Cathode Dual, In Series
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cll914cmpd28cmpd28icmpd7000+16bas28cmpd4448cll4448cmpd41cll4150bas561n4937 smddiode 1n4007 melf smd2n5401 smd1n4001 melfdiode 1n4007 melf2n2222a sot2231n4148 sod-802n2222a sot231n5819 sod802n2369 sot-23
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1N4007 diode SOD 80
Abstract: 1N4148 SMA 2n2222a SOT23 smd 2n3055 2N2369 SOT-23 2n3904 smd 2n3055 SOT-23 TIP41 SOT23 2N6520 sot23 SMD DIODE 1N4006
Contextual Info: Leaded to Surface Mount Equivalents LEADED SMD CASE COMMENTS 1N 914 BAS28 CLL914 CMPD 914 CMPD2836 CMPD2838 CMPD7000 SOT-143 SOD-80 SOT-23 SOT-23 SOT-23 SOT-23 Dual, Isolated Leadless Switching Diode Single Switching Diode Dual, Common Anode Dual, Common Cathode
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bas28cll914cmpd2836cmpd2838+16cmpd7000cll4448cmpd4448bas56cll4150cmpd41501n4007 diode sod 801n4148 sma2n2222a sot23smd 2n30552n2369 sot-232n3904 smd2n3055 sot-23tip41 sot232n6520 sot23smd diode 1n4006
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Aromat relays TQ2E-5V
Abstract: 55050-A2 mc34063 step down npn mc34063a step down external transistor 74hc02a FMPS-A06 Motorola phone schematic diagram MPSA06 transistor MC145436A T83S11D212-05
Contextual Info: Order this document by AN1603/D AN1603 Providing a POTS Phone in an ISDN or Similar Environment Prepared by: Dennis Morgan Motorola Analog Marketing INTRODUCTION This circuit is intended to provide an auxiliary circuit for the connection of a POTS phone or answering machine, fax,
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an1603/dan1603aromat relays tq2e-5v55050-a2+8mc34063 step down npnmc34063a step down external transistor74hc02afmps-a06motorola phone schematic diagrammpsa06 transistormc145436at83s11d212-05
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2n1613 equivalent
Abstract: BC237 diode l 0607
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BAV99WT1 BAV99RWT1 SC-70/SOT-323 Dual Series Switching Diode Motorola Preferred Devices The BAV99WT1 is a smaller package, equivalent to the BAV99LT1. Suggested Applications • ESD Protection • Polarity Reversal Protection
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sc-70/sot-323bav99wt1bav99lt1bav99rwt1+8msc1621t1msc2404msd1819amv1620mv16242n1613 equivalentbc237diode l 0607
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BC237
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper MMBFJ175LT1 P–Channel — Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Drain – Gate Voltage Reverse Gate – Source Voltage Symbol Value Unit VDG 25 V VGS r
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mmbfj175lt1236abga218amsc1621t1+6msc2404msd1819amv1620mv1624mv1636bc237
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BC237
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper P–Channel — Depletion 2 SOURCE MMBFJ177LT1 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Symbol Value Unit VDG 25 Vdc VGS r – 25 Vdc 2 CASE 318 – 08, STYLE 10
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BC237
Abstract: MPSA06 346
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste
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BC237
Abstract: MARKING CODE diode sod123 W1 K 2056 transistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3455XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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mgsf3455xt1t218amsc1621t1msc2404+9msd1819amv1620mv1624mv1636mv1640mv1642bc237marking code diode sod123 w1k 2056 transistor
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2N643
Abstract: BC237 MARKING DP SOT-363 DO204AA
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
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mmbd1010lt1mmbd2010t1mmbd3010t1s218a+9msc1621t1msc2404msd1819amv1620mv16242n643bc237marking dp sot-363do204aa
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BC237
Abstract: MMBD2005T1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
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2N16
Abstract: BC237 BCY72
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF1P02ELT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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2n2222 h 331 transistors
Abstract: 2n2222 -331 transistors 2n2222 331 transistors BC237 2n2222 h 331 MARKING CODE diode sod123 W1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3442XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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mgsf3442xt1t218amsc1621t1msc2404+12msd1819amv1620mv1624mv1636mv1640mv16422n2222 h 331 transistors2n2222 -331 transistors2n2222 331 transistorsbc2372n2222 h 331marking code diode sod123 w1
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MMBF4856
Abstract: transistor equivalent 2n5551 BF245 application note MSC2404 MSC1621 74LS04 Fan Out 2n3819 equivalent transistor MMBF5486L bf245 equivalent MPS8093
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MDC3105LT1 Motorola Preferred Device Integrated Relay/Solenoid Driver • Optimized to Switch 3 V to 5 V Relays from a 5 V Rail • Compatible with “TX’’ and “TQ’’ Series Telecom Relays Rated up to
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automat218amsc1621t1msc2404msd1819a+15mv1620mv1624mv1636mv1640mv1642mv1644mmbf4856transistor equivalent 2n5551bf245 application notemsc162174ls04 fan out2n3819 equivalent transistormmbf5486lbf245 equivalentmps8093
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2n3819 replacement
Abstract: 2n3053 replacement BC109C replacement mps2907 replacement bf245 replacement BC237 BF245 bf258 replacement J112 equivalent 2N4265
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diode MMBV809LT1 This device is designed for 900 MHz frequency control and tuning applications. It provides solid–state reliability in replacement of mechanical tuning methods. Motorola Preferred Device
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mmbv809lt1236abmsc1621t1msc2404+16msd1819amv1620mv1624mv1636mv1640mv16422n3819 replacement2n3053 replacementbc109c replacementmps2907 replacementbf245 replacementbc237bf245bf258 replacementj112 equivalent2n4265
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MIL-STD-750 method 1037
Abstract: BC237 BF245 MPF4856
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA SOD-123 Schottky Barrier Diodes MMSD301T1 MMSD701T1 The MMSD301T1, and MMSD701T1 devices are spin–offs of our popular MMBD301LT1, and MMBD701LT1 SOT–23 devices. They are designed for high–efficiency UHF and VHF detector applications. Readily available to many other
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BC237
Abstract: Fet BF245
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N–Channel — Enhancement VN0300L 3 DRAIN Motorola Preferred Device 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDSS 60 V Drain – Gate Voltage VDGR 60 V
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vn0300l226aamsc1621t1msc2404+8msd1819amv1620mv1624mv1636mv1640mv1642bc237fet bf245
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MPS751 equivalent
Abstract: MPS651 equivalent 2n2222 npn transistor footprint BC237 pnp for 2n3019 pnp bc547 transistor 2n2219 soa Transistor BC107 NPN GENERIC PNP SILICON TRANSISTOR 2n2222 2N2222 MPS2222 npn transistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MPS650 MPS651 * PNP MPS750 MPS751 * Amplifier Transistors COLLECTOR 3 COLLECTOR 3 2 BASE 2 BASE NPN PNP Voltage and current are negative for PNP transistors 1 EMITTER 1 EMITTER *Motorola Preferred Devices MAXIMUM RATINGS
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mps650mps651mps750mps751+122218amsc1621t1mps751 equivalentmps651 equivalent2n2222 npn transistor footprintbc237pnp for 2n3019pnp bc547 transistor2n2219 soatransistor bc107 npngeneric pnp silicon transistor 2n22222n2222 mps2222 npn transistor
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SOT23 JEDEC standard orientation pad size
Abstract: sot-23 npn marking code VD BC237 p2f sot-23 transistor 2N5458
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP Silicon Epitaxial Transistor PZT2907AT1 Motorola Preferred Device This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is
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ot-223pzt2222at1pzt2907at1inch/1000+9pzt2907at3inch/4000uni218amsc1621t1sot23 jedec standard orientation pad sizesot-23 npn marking code vdbc237p2f sot-23transistor 2n5458
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BC237
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BAS40-04LT1 Preliminary Information Common Anode Schottky Barrier Diode Motorola Preferred Device These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces
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motorola JFET 2N3819
Abstract: C4 SOT-323 equivalent transistor 2N1711 mvm010 marking code C5 sot23 BC237 JFET 2N3819 MOTOROLA
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET VHF/UHF Amplifier Transistor N–Channel MMBFJ309LT1 MMBFJ310LT1 2 SOURCE 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Gate–Source Voltage VGS 25 Vdc IG 10 mAdc Gate Current
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mmbfj309lt1mmbfj310lt1236abmsc1621t1+11msc2404msd1819amv1620mv1624motorola jfet 2n3819c4 sot-323equivalent transistor 2n1711mvm010marking code c5 sot23bc237jfet 2n3819 motorola
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