MPS6574 Search Results

mpsa25c

Abstract: MPS-A12 MPS6576C
Contextual Info: AL L E GRO MI C ROS Y S T E MS I NC T3 D • 0504330 DDQBSbb - 8514019 SPRAGUE. 7 ■ ALGR , ^ 93D 03566 3 ' X ' f l i l ~\£> SEMICONDS / ICS BIPOLAR TRANSISTOR CHIPS NPN Transistors ‘MPS’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C Device Type

200 watt audio amplifier with ic

Abstract: mps6573 MPS6574 MPS6575 MPS6576 mps667 mps6674.mps6576
Contextual Info: MPS6573 silicon thru MPS6576 NPN SILICON ANNULAR TRANSISTORS NPN SILICON AUDIO TRANSISTORS . designed fo r a u d io a m p lifie r a p p lica tio n s. D C C u rre n t G a in S p e cifie d fo r A u d io P re d riv e r Design — 100/LiAdc to 10 m A d c fo r M P S 6 5 7 3 and M P S 6 5 7 5

Contextual Info: Low Level and General Purpose Amplifiers TYPE POLA­ NO. RITY CASE M AXIM UM RATINGS Pd IC VCEO mW (mA) (V) HFE min max VCE(sat) fT Cob IC VCE max IC min max max (mA) (V) (V) (mA) (M Hz) (M Hz) (dB) 2 2 2 2 2 4.5 10 10 10 10 - 5 12 12 12 3.5 - - 10 10 10

powec rm 1110

Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

2N50b

Abstract: BCY5B 2SC307B DIODE bon BCW60RD 2N50B2 BFW83
Contextual Info: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 BFW83 2SC997 2N50B2 2N50B2 TISB4 TISB4 BSX2B 2SC3122 BFW64 NR421DE NR421DF BF260 BF261 2SC1394 2SC1394 BF329 2N3933 BFW70 ZTX327 BFSll ~~iJ~7 25 30 MPSH33 SE5035 BFR37 BFR37 2N4934 BCW60A

sprague MPSA05

Contextual Info: SPRAGUE/SEfllCOND 13 GROUP 8 51 40 19 SPRAGUE. D • flS13flS0 ODOBSTl SEMICONDS/ I C S 7 93D 0 3 5 9 1 ■ ' D PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘MPS’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain IcBO V _ 60 60

cs9011j

Abstract: MPS151 PN5180 MPS4424 BC5608 8c527-25 2N3304 BC5568 PN2897 MPS9633C
Contextual Info: CRIMSON SEMICONDUCTOR INC TT DE | 5 5 1 4 0 ^ 2 5 1 4 0 9 6 C R I M S O N S E M I C O N D U C T O R INC D T 99D 00293 DEVICF TYPE PACKAGE By.CEO BVCBO BVEBO ICBO @ VCB IV I M iN IV ! M .N . UN i- A l M Ah |V D0D0ET3 0 6 / - HFE @ VC & iC M Ah .V t—"A •

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

Contextual Info: TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. MPS6521 ^CBO (V) Min ^CEO (V) Min ^EBO (V) Min 40 25 4 Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Pd (W) (A) @Tc=25°c 0.625 0.1 'cBO m ^CB (V) Max 0.05 'c e s (|iA)

bcs47

Abstract: BCS48 BC170C 8C548 BF494 ph 06 BC170B BF494 ph 04 cd639 BCS48B bf238
Contextual Info: 1 < 3 2 1 DIM MIN MAX A 4,32 5,33 8 4,45 T 5,20 C 3,18 4,19 D 0,41 0,55 E 0,35 0,50 F 5 DEG G 1,14 H 1,14 1,53 K 12,70 - 1,40 ALL D IM EN SIO N S IN M M. Pin Configuration Available in TO-92 S JÜ - A A SEC ^ CDU. Code Style Pin 1 TO-92 Pin 2 Pin 3 Emitter

to-92-3

Abstract: MPS6547 MPS6521 MPS6530 MPS6531 MPS6532 MPS6539 MPS6540 MPS6541 MPS6542
Contextual Info: TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Vcbo VcEO Vebo Pd 'c M (V) (V) (W) (A) Min Min Min @Tc=25°( 'cBO v CB 'ces ^CE '’Ft 0 'c & VCE (mA) IV) (PA) (V) IMA) © (V)

2SA532

Abstract: BC109 BC184 BC549 BC317 2SC734 Y MS181A BC159 8 2SC876 TTP31A ML78M06A BC357
Contextual Info: ALPHANUMERIC INDEX TYPE NO. 057-2G 1611G 1620G 1621-2G 1623G 1641G 1N4001 1N4002 1N40Û3 1N4004 1N4005 1N4006 1N4007 1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398 1N5399 1N5400 1N5401 IN5402 1N5403 1N5404 1N5405 1N5406 1N5407 1N5408 2021-1G 2023G

Contextual Info: ALLEGRO MICROSYSTEMS INC 8 5 1 4 0 1 9 SPRA GU E. T3 D • OSD433Ö □□□35^1 h ■ ALGR S E M I C O N D S / ICS D 93 D 03591 PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘MPS’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain

hep 154 silicon diode

Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

sC3228

Abstract: BC286 bc 7-25 pnp MPS9681T BC527-25 BC5508 BC537 BC5568 2N5222 8C416
Contextual Info: CRIMSON SEMICONDUCTOR INC TT 25 14 09 6 C R I M S O N S E M I C O N D U C T O R 99D 00293 DEVICF 2N1507 2N1566 2N I613 2 N I7 U 2N1889 2N1890 TYPE NPN NPN NPN NPN NPN PACKAGE DE | S S I M Q T L INC D T Ô / - COB HFE @ VC & iC By.CEO BVCBO BVEBO ICBO @ VCB

wiring diagram audio amplifier ic 6283

Abstract: germanium Transistor Shortform Datasheet & Cross References halbleiter index transistor 2N5160 MOTOROLA transistor ITT 2907 1N5159 2N 5574 inverter welder 4 schematic diagrams de ic lg 8838
Contextual Info: THC SEMICONDUCTOR DATA LIBRARY SECOND EDITION VOLUME H prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the purchaser of semiconductor

BF244 datasheet

Abstract: 2N5133 equivalent MPS5771 BD345 BD347 BF244 2n5248 bf256 2N3304 2n5910
Contextual Info: Index Industry Part Number Central Process No. Page # Industry Part Number 1N456 .CPD64 . 216 1N456A.CPD64 . 216 1N457 .CPD64 . 216

gk 106

Abstract: BCHL MICRO ELECTRONICS ltd transistor transistor TO-106 422 MPS6566 transistor
Contextual Info: MICRO ELECTRONICS LTD 51E D • bGT17ññ 0Q0107M 422 ■ MEHK Low Level and G eneral Purpose Amplifiers TYPE NO. POLARITY T -2 7 -0 1 CASE MAXIM UM RATINGS Pd <mW mA| VCEO (V) 'c V CE(SAT) h fe 'c min max (m A | V CE (V) max (V) 'c (mA) MPS3608 MPS3707

transistor 2N929

Abstract: 2C5088 MPS-A10 SILICON SMALL-SIGNAL DICE MPSA20 MPSA10 2n929 2N5172 SILICON DICE motorola MPS5133
Contextual Info: NOTOROLA SC {DIODES/OPTO* 6367255 MOTOROLA SC 34 D I O D E S /OPTO ' ÏF|bBb7ESS 0 0 3 7 ^ 34C 37999 . SILICON SMALL-SIGNAL TRANSISTOR DICE (continued) 7 " D ~7 2C5088 DIE NO. — NPN LINE SOURCE: DMB100 This die provides performance similar to that of the following device types:

transistor 2N3563

Abstract: 2n3819 cross reference 2SK30 2SA726 2sk41e 2SC1026 transistor 2sc1417 2Sa1026 2SC2259 BC150 transistor
Contextual Info: Section 1 Cross Reference Guide . 1-3 Process Selection Guides Preferred Part Numbers by Process .

1N4548

Abstract: 1N4008 Diode 1N4008 1N4008 diode 1N1744A 1n4148 1N523b 2N4418 BAX15 1n5428
Contextual Info: Discrete POWER & Signal Technologies Diode Cross-Reference Guide Industry Part Number 1N100 1N100A 1N101 1N102 1N103 1N104 1N108 1N111 1N112 1N113 1N114 1N115 1N116 1N116A 1N117 1N1170 1N117A 1N118 1N118A 1N119 1N120 1N126 1N126A 1N127 1N127A 1N128 1N128A