MPS5135 Search Results

Contextual Info: MPS5135 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)30 I(C) Max. (A)800m Absolute Max. Power Diss. (W)625m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)300nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

sprague MPSA05

Contextual Info: SPRAGUE/SEfllCOND 13 GROUP 8 51 40 19 SPRAGUE. D • flS13flS0 ODOBSTl SEMICONDS/ I C S 7 93D 0 3 5 9 1 ■ ' D PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘MPS’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain IcBO V _ 60 60

2N4418

Abstract: 2N4409 SILICON SMALL-SIGNAL DICE MPS-D02 SILICON DICE motorola
Contextual Info: MOTOROLA SC -CDIODES/OPTO} 6367255 MOTOROLA SC BM !=>3k>7255 DD3ÖDD3 Ö f 34-C 3 8 0 0 3 D IO D E S /O P T O D SILICON SMALL-SIGNAL TRANSISTOR DICE (conrfnued) 2C5551 DIE NO. — NPN LINE SOURCE — DMB106 This die provides performance similar to that of the following device types:

MPS3568

Abstract: MPS3414C MPS3415C MPS3416C MPS3417C MPS3563C MPS3565C MPS3566C MPS3567C MPS3568C
Contextual Info: B IPO LA R TRANSISTOR CHIPS NPN Transistors ‘M P S ’ Device ly p e s ELECTRICAL CHARACTERISTICS al T* - 25°C OC C ur«t Gain '«0 Device Type MPS3405C MPS3414C MPS3415C MPS3416C MPS3417C MPS3563C MPS3565C MPS3566C MPS3567C MPS3568C MPS3S69C MPS3642C MPS3646C

Contextual Info: ALLEGRO MICROSYSTEMS INC 8 5 1 4 0 1 9 SPRA GU E. T3 D • OSD433Ö □□□35^1 h ■ ALGR S E M I C O N D S / ICS D 93 D 03591 PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘MPS’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

CL66

Abstract: 2N3565 2n2349 2N702 2N1388 2SC3368 BSX25 2S701 LOW-POWER SILICON NPN 2N1528
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 2SC3327 04020 2N2349 04021 MMBT3393 MMBT6515 2N1763 2SC563 2SC563 2SC563 Manufacturer 85 90 95 Ie Max A fT (Hz) 20 24 24 24 25 25 25 25 25 25 1.2k 50 120 135 25 25 25

MPS3405C

Abstract: MPS3414C MPS3415C MPS3416C MPS3417C MPS3563C MPS3565C MPS3566C MPS3567C MPS3568C
Contextual Info: ALLEGRO MICROSYSTEMS INC 85 140 19 SP RA GU E. D T3 • 0504330 G0G3SbS S ■! AL6R S E M I C O N D S / ICS TA 9 3 D 03 5 6 5 ^ BIPOLAR TRANSISTOR CHIPS NPN Transistors ‘MPS’ Device Types E LE C T R IC A L CH ARACTERISTICS at TA = 25°C DC Current Gain

TXD10K40

Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G
Contextual Info: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40