MPF666 Search Results

F6659

Abstract: F6660
Contextual Info: MPF6659 thru MPF6661* MAXIMUM RATINGS Rating Symbol MPF6659 MPF6660 MPF6661 D ra in -S o u rc e V o lta g e D ra in -G a te V o lta g e G a te -S o u rc e V o lta g e VG S ±30 D ra in C u rre n t — C o n tin u o u s 1 P u lse d (2) lD 'D M 2.0 3.0 Unit

2N6660

Abstract: 2N6661 MPF6660 2N6659 MPF6661 mps 0737 2N6660 MOTOROLA MOTOROLA TO205AD 2N6661 transistor MPS 0711
Contextual Info: 2N6659 MPF6659 2N6660 MPF6660 2N6661 MPF6661 N-CHANNEL ENHANCEMENT-MODE TMOS POWER FIELD-EFFECT TRANSISTOR These TMOS Power FETs are designed. for high-current, highspeed power switching applications such as switching power supplies, ,CMOS logic, microprocessor or ~L-to-tiigh

MPF6659

Abstract: MPF6661 MPF6660
Contextual Info: MPF6659 thru MAXIMUM RATINGS Symbol MPF6659 MPF6660 MPF6661 Rating Drain-Source Voltage VDS 35 Drain-Gate Voltage VDG 35 Gate-Source Voltage 90 60 90 VGS ±30 Id 2.0 3.0 MPF6661* Vdc CASE 29-05, STYLE 22 TO-92 TO-226AE Vdc Vdc Ade Id m Total Device Dissipation

MPF6660

Abstract: MPF6659 MPF6661 FET small signal transistors motorola motorola *6659
Contextual Info: MOTOROLA Order this document by MPF6659/D SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistors N–Channel — Enhancement MPF6659 MPF6660 MPF6661 3 DRAIN 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol MPF6659 MPF6660 MPF6661 Unit Drain – Source Voltage VDS

2N3819 junction fet

Abstract: 2N5486 characteristics BC237 bc107a pin out j305 replacement BCY72
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistors N–Channel — Enhancement MPF6659 MPF6660 MPF6661 3 DRAIN 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol MPF6659 MPF6660 MPF6661 Unit Drain – Source Voltage VDS 35 60 90 Vdc Drain – Gate Voltage

motorola *6659

Contextual Info: m o to ro la SEMICONDUCTOR TECHNICAL DATA Order this document by MPF6659/D TM OS FET Transistors N-Channel — Enhancement MPF6659 MPF6660 MPF6661 3 DRAIN MAXIMUM RATINGS Symbol MPF6659 MPF6660 MPF6661 Unit D ra in -S o u rc e Voltage Vd S 35 60 90 Vdc D ra in -G a te Voltage

Contextual Info: MPF6659 M A XIM U M RATINGS Rating Symbol MPF6659 MPF666Û MPF6661 D ra in -So u rce V oltage VDS 35 60 90 V dc Drain-Gate V oltage VDG 35 60 90 V dc G ate-Source V oltage — C o n tin u o u s - Non-repetitive tp « 50 ¿is vg s ±20 ±40 Vg SM Drain Current

MPF6659

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistors M PF6659 M PF6660 MPF6661 N -C h a n n e l — Enhancem ent 3 DRAIN MAXIMUM RATINGS Rating Drain - Source Voltage D ra in -G a te Voltage G ate-Source Voltage — Continuous — N on-repetitive tp < 50 us

2N6661

Abstract: 2N6659 2N6660 MPF6659 MPF6660 MPF6661 N666
Contextual Info: MOTOROLA MAXIMUM RATINGS 2N6659 2 N6660 2N6661 Symbol MPF6659 m rrpoou MPF6661 t Rating Unft Drain-Source Voltage Vd s 35 60 90 Vdc Drain-Gate Voltage Vd G 35 60 90 Vdc Gate-Source Voltage VGS Drain Current — Continuous 1 Pulsed (2) ± 30 Vdc 2.0 3.0 'd m

motorola U310

Abstract: U310 motorola TO206AC U310
Contextual Info: M OT O R OL A SC XSTRS/R F 1EE D | b3b72S4 S I MPF6659 thru MPF6661 “ ' For Specifications, See 2N6659 Data. U308 thru U310 CASE 27*02, STYLE 4 TO-52 TO-206AC MAXIM UM RATINGS Symbol Value Unît Drain-Source Voltage Vos 25 Vdc Gate-Source Voltage Vg S

M2N6660

Abstract: 2N6660 Mosfet 2903 MPF6661
Contextual Info: MOTOROLA SEM ICONDUCTOR 2N6660 MPF6660 2N6661 MPF6661 TECHNICAL DATA N-CHANNEL ENH ANCEM ENT-M ODE TM O S FIELD-EFFECT TRANSISTOR 2 .0 A M P E R E N -C H A N N E L T M O S FET T h e s e T M O S FETs are d e s ig n e d fo r h ig h -s p e e d s w itc h in g a p p li­

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty

transistor mosfet buv18a

Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
Contextual Info: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

MPF89

Abstract: BSS89 "cross reference" VN2410L "cross reference" MPF910 VN0300L "cross reference" VN10LM "cross reference" MPF960 "cross reference" Mosfet 2n7000 MPF6661 "cross reference" BSS89
Contextual Info: Small-Signal TMOS MOSFETs Table 17 — TMOS Switches and Choppers T he follow ing is a listing of sm all-sig na l T M O S d e vice s that are in te nd ed for sw itch ing and ch o p p e r applicatio ns. vDss C iS8 Crs8 *on »off V Min PF Max PF Max ns Max ns

transistors BC 557C

Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Contextual Info: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and

TCA780

Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Contextual Info: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP

mosfet cross reference

Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
Contextual Info: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is

MFQ960C

Abstract: MLPI MPF6860 MPM3002 mrf151g 300 MFQ930C MFQ990C MGM20N45 MGM20N50 MGP20N45
Contextual Info: 277 - tt f M. A 1- Vd s or € * £ Vg s W. t S T a = 2 5 cC Ig s s Pd Id loss th) F Ds(on) Vd s * ‘ 14 (Ta=25°C) b(on) Ciss g fs Coss Crss * /CH * /CH Vg s (V) (A) <nA) CW) min max (V) (V) (V) (V) (UA) (*typ) (max) Id OnA) Vd s ft B m % V g s =0 Vg s

BC517 spice model

Abstract: bc547 spice model bc548 spice model h1 m6c MPS6595 bc557 Spice Model BF245 A spice spice model bf199 BC640 SPICE model transistor motorola Selector Guide Plastic-Encapsulated Transistors GreenLineTM Portfolio Devices S
Contextual Info: Selector Guide 1 Plastic-Encapsulated Transistors 2 GreenLine Portfolio Devices 3 Small-Signal Field-Effect Transistors and MOSFETs 4 Small-Signal Tuning and Switching Diodes 5 Tape and Reel Specifications and Packaging Specifications 6 Surface Mount Information

MLED96

Abstract: BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA
Contextual Info: ALPHANUMERIC INDEX DEVICE ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 BAV99LT1 BAW56LT1 BC107,A,B BC109C BC177B BC182 BC212 BC237B BC239 BC307B BC327 BC328 BC337 BC338 BC368 BC369 BC373 BC489 BC490 BC517 BC546,A,B

IRFD1Z3 equivalent

Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
Contextual Info: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not