MOTOROLA POWER TRANSISTOR REV 6 Search Results

MC33094DW

Contextual Info: Freescale Semiconductor Advance Information Document Number: MC33094 Rev. 1.0, 10/2006 Ignition Control 33094 Designed for automotive ignition applications in 12 V systems, the 33094 provides outstanding control of the ignition coil when used with an appropriate Motorola Power Darlington Transistor. Engine control

ignition coil driver cross reference

Abstract: motorola automotive transistor coil ignition ignition coil npn power darlington Triggered spark gap hall effect sensor ignition COIL IGNITION motorola transistor ignition MC33094DWR2 automotive ignition coil MC33094DW
Contextual Info: Freescale Semiconductor Advance Information Document Number: MC33094 Rev. 1.0, 10/2006 Ignition Control 33094 Designed for automotive ignition applications in 12 V systems, the 33094 provides outstanding control of the ignition coil when used with an appropriate Motorola Power Darlington Transistor. Engine control

automotive transistor coil ignition

Abstract: SPARK GAP 350v CR 109 IGNITION MODULE zener diode A 36 motorola automotive transistor coil ignition ignition coil driver cross reference MCZ33094EG
Contextual Info: Freescale Semiconductor Advance Information Document Number: MC33094 Rev. 1.0, 10/2006 Ignition Control 33094 Designed for automotive ignition applications in 12 V systems, the 33094 provides outstanding control of the ignition coil when used with an appropriate Motorola Power Darlington Transistor. Engine control

transistor BD 522

Abstract: BDS08 transistor 3203 Transistor 3202 1 A 60 221A-06 10 watt power transistor bd BD801 BD802 BD808 BD810
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD801 P lastic High Power Silicon NPN Transistor ‘Motorola Preferred Device 8 AMPERE POWER TRANSISTORS NPN SILICON 100 VOLTS 65 WATTS . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi

2N6488 MOTOROLA

Abstract: 1N5825 221A-06 2N6487 2N6488 2N6490 2N6491 2N6497 MSD6100 ISS-20
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N 6487 Com plem entary Silicon P lastic Power Transistors 2N 6488* PNP . . . designed for use in general-purpose amplifier and switching applications. 2N 6490 2 N6491* • DC Current Gain Specified to 15 Amperes —

ADC 808

Abstract: bd 808 BD808 BD810 T1 BD 139
Contextual Info: MOTOROLA Order this document by BD808/D SEMICONDUCTOR TECHNICAL DATA BD808 BD810* Plastic High Power Silicon PNP Transistor *Motorola Preferred Device 10 AMPERE POWER TRANSISTORS PNP SILICON 60, 80 VOLTS 90 WATTS . . . designed for use in high power audio amplifiers utilizing complementary or quasi

BD165

Abstract: TRANSISTOR BD 168 TRANSISTOR bd165 BD NPN transistors transistor BD 140 BD 140 transistor BD169 power transistor audio amplifier 500 watts 10 watt power transistor bd Motorola Bipolar Power Transistor Data
Contextual Info: MOTOROLA Order this document by BD165/D SEMICONDUCTOR TECHNICAL DATA BD165 BD169 Plastic Medium Power Silicon NPN Transistor 1.5 AMPERE POWER TRANSISTORS NPN SILICON 45, 60, 80 VOLTS 20 WATTS . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi

BU806 MOTOROLA

Abstract: BU806 motorola darlington power transistor NT 407 F TRANSISTOR 221A-06 transistor j 127
Contextual Info: MOTOROLA Order this document by BU806/D SEMICONDUCTOR TECHNICAL DATA BU806 NPN Darlington Power Transistor 8.0 AMPERE DARLINGTON NPN POWER TRANSISTORS 60 WATTS 200 VOLTS This Darlington transistor is a high voltage, high speed device for use in horizontal

2N5758

Abstract: motorola msd6 MSD6100 1N5825 2N4398 2N5745 2N5760
Contextual Info: MOTOROLA Order this document by 2N5758/D SEMICONDUCTOR TECHNICAL DATA 2N5745 See 2N4398 2N5758 High-Voltage High-Power Silicon Transistors 6 AMPERE POWER TRANSISTOR NPN SILICON 100 – 140 VOLTS 150 WATTS . . . designed for use in high power audio amplifier applications and high voltage

Motorola ic

Abstract: Transistor D 799 BD802 transistor BD 522 MOTOROLA TRANSISTOR 10 watt power transistor bd
Contextual Info: MOTOROLA Order this document by BD802/D SEMICONDUCTOR TECHNICAL DATA BD802 Plastic High Power Silicon PNP Transistor 8 AMPERE POWER TRANSISTORS PNP SILICON 100 VOLTS 65 WATTS . . . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi

bd798

Abstract: BD8015 Motorola design of audio amplifier power transistor audio amplifier 500 watts BD801 MOTOROLA TRANSISTOR transistor BD 522
Contextual Info: MOTOROLA Order this document by BD801/D SEMICONDUCTOR TECHNICAL DATA BD801 Plastic High Power Silicon NPN Transistor 8 AMPERE POWER TRANSISTORS NPN SILICON 100 VOLTS 65 WATTS . . . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi

motorola transistor 2N6547

Abstract: EM- 546 motor 2n6546 motorola PK 002 bt 1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND
Contextual Info: MOTOROLA O rder this docum ent by 2N6547/D SEMICONDUCTOR TECHNICAL DATA 2N 6547 Designer’s Data Sheet Sw itchm ode Series NPN Silicon Pow er Transistors The 2N6547 transistor is designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for 115 and

2n3055 motorola

Abstract: tip122 tip127 audio amp schematic transistor equivalent book 2sc2238 IR640 transistor motorola 40411 TRANSISTOR REPLACEMENT GUIDE ir431 motorola AN485 C2688 2SA1046
Contextual Info: Index and Cross Reference 1 Selector Guide 2 Data Sheets 3 Surface Mount Package Information and Tape and Reel Specifications 4 Outline Dimensions and Leadform Options 5 Applications Information 6 Thermal Clad is a trademark of the Bergquist Company. Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad,

2n6251 application

Contextual Info: MOTOROLA Order this document by 2N6251/D SEMICONDUCTOR TECHNICAL DATA 2N 6251 High V o ltag e NPN Silicon Pow er Transistors . . . designed for high voltage inverters, sw itching regulators and line operated amplifier applications. Especially well suited for switching power supply applications.

MJ14002

Abstract: MJ14001 MJ14003 COMPLEMENTARY SILICON POWER TRANSISTORS 200CT
Contextual Info: MOTOROLA Order this document by MJ14001/D SEMICONDUCTOR TECHNICAL DATA NPN MJ14002* PNP MJ14001 MJ14003* High-Current Complementary Silicon Power Transistors . . . designed for use in high–power amplifier and switching circuit applications, • High Current Capability — IC Continuous = 60 Amperes

2N6096

Abstract: 2N6055 2N6055 MOTOROLA N6056 2N6056
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N 6055 2 N6056* Darlington Com plem entary Silicon Power Transistors "Motorola Preferred Device . . . designed for general-purpose amplifier and low frequency switching applications. • • • • DARLINGTON 8 AMPERE

MR854 diode

Abstract: 1N4934 1N4937 2N3763 2N6339 2N6438 BUT33 MM3735 MR854
Contextual Info: MOTOROLA Order this document by BUT33/D SEMICONDUCTOR TECHNICAL DATA BUT33  Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode Designer's 56 AMPERES NPN SILICON POWER DARLINGTON TRANSISTOR 600 VOLTS 250 WATTS

2N5631

Abstract: 2N6031 MOTOROLA 2N6031 2N6030 2N5630 2N6031 amplifier 2N5631 MOTOROLA MOTOROLA 2N5631 2n6030 transistor 2NS631
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N 5630 H igh-Voltage — High Power Transistors 2N5631 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. 2N 6030 • High Collector Emitter Sustaining Voltage —

2N6388

Abstract: 2N6387 2N63
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N 6387 2N 6388* Plastic M edium -Pow er Silicon Transistors "Motorola Prtf*nr#d D#v»c* . . designed for general-purpose amplifier and low -speed switching applications. DARLINGTON 8 AND 10 A M PE R E NPN SILICON PO W ER T R A N SIST O R S

2N4923

Abstract: 2N4922
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M edium -Pow er Plastic NPN Silicon Transistors . . . designed for driver circuits, switching, and am plifier applications. These high-performance plastic devices feature: • • Low Saturation Voltage — VcE sat = 0-6 Vdc (Max) @ lc = 1-0 Amp

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV11 SWITCHMODE Serles NPN Silicon Power Transistor 20 AMPERES NPN SILICON POW ER METAL TRANSISTOR 200 VOLTS 150 WATTS . . . designed for high current, high speed, high power applications, t • • High DC current gain; hFE mln. - 20 at lc • 6 A

MTP55N06Z

Abstract: TMOS E-FET
Contextual Info: MOTOROLA Order this document by MTP55N06Z/D SEMICONDUCTOR TECHNICAL DATA Advance Information MTP55N06Z TMOS E-FET. Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 55 AMPERES 60 VOLTS RDS on = 18 mΩ This advanced high voltage TMOS E–FET is designed to

YS02

Abstract: GS10 ZD AN569 MTP2N60E MTP2P50E 60Ade mtp2p zu4f
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M T P 2N 60E TM O S E-FET™ P o w er Field E ffe c t T ran sisto r Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS on = 3.8 OHMS This high voltage MOSFET uses an advanced termination

bux85

Abstract: Motorola Bipolar Power Transistor Data
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX85 SWITCHMODE NPN Silicon Power Transistors 2 AMPERES POWER TRANSISTOR NPN SILICON 450 VOLTS 60 WATTS The BUX85 is designed for high voltage, high speed power switching applications like converters, inverters, switching regulators, motor control systems.