MOSFET T Search Results

9n90c

Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
Contextual Info: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W

Contextual Info: US6M2 Transistors 2.5V Drive Nch+Pch MOSFET US6M2 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm 0.2Max. TUMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) High-speed switching, low On-resistance.

20V P-Channel Power MOSFET

Abstract: US6M2
Contextual Info: US6M2 Transistors 2.5V Drive Nch+Pch MOSFET US6M2 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm 0.2Max. TUMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) High-speed switching, low On-resistance.

Contextual Info: 1.5V Drive Nch+Pch MOSFET US6M11 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm 0.2Max. TUMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) Low on-resistance. 3) Low voltage drive (1.5V drive).

power mosfet

Abstract: mosfet "Power MOSFET" POWER MOSFET DATA BOOK to220fp mosfet equivalent 2SK3130 TO-220FP mosfet Application Notes MOSFET DATA BOOK
Contextual Info: 2SK3130 Power MOSFET GENERAL DESCRIPTION FEATURES Page 1 2SK3130 Power MOSFET ABSOLUTE MAXIMUM RATIGS Page 2 2SK3130 Power MOSFET ELECTRICAL CHARACTERISTICS o Unless otherwise specified,TJ=25 C. Page 3 2SK3130 Power MOSFET TYPICAL ELECTRICAL CHARACTERISTICS

fet_11100.0

Contextual Info: Category: MOSFET CIRCUIT IDEAS FOR DESIGNERS Basic MOSFET / EPAD Schematic no. fet_11100.0 MOSFET Inverter Circuit Description This circuit shows a basic MOSFET or EPAD MOSFET inverter circuit. The drain terminal is the output and the gate terminal is the input. The output voltage VO is determined by the input voltage

CT222ADM

Abstract: ir led photovoltaic mosfet driver
Contextual Info: Photovoltaic MOSFET Drivers CT222ADM Semitronics Description: Dual MOSFET Driver Active Discharge The CT222ADM is an isolated dual photovoltaic MOSFET driver used when a high degree of electrical isolation is required. The driver can isolate the MOSFET from more

mosfet inverter

Abstract: MOSFET MOSFET pA leakage voltage inverter schematic mosfet INVERTER applications circuit ideas LOW R MOSFET
Contextual Info: CIRCUIT IDEAS FOR DESIGNERS Category: MOSFET Schematic no. fet_11100.0 Basic MOSFET / EPAD  MOSFET Inverter Circuit Description This circuit shows a basic MOSFET or EPAD MOSFET inverter circuit. The drain terminal is the output and the gate terminal is the input. The output voltage VO is determined by the input voltage

Contextual Info: LM2725,LM2726 LM2725/LM2726 High Speed Synchronous MOSFET Drivers Literature Number: SNVS144B LM2725/LM2726 High Speed Synchronous MOSFET Drivers General Description The LM2725/LM2726 is a family of dual MOSFET drivers that drive both the top MOSFET and bottom MOSFET in a pushpull structure simultaneously. It takes a logic level PWM input

2N7225U

Abstract: SMD1P IRFN250 JANTX2N7225U JANTXV2N7225U mosfet ir 250 n 2n7225
Contextual Info: PD-91549B IRFN250 JANTX2N7225U HEXFET POWER MOSFET JANTXV2N7225U [REF:MIL-PRF-19500/592] N - CHANNEL Ω MOSFET 200 Volt, 0.100Ω HEXFET® power MOSFET technology is the key to InternationalRectifier’s advanced line of power MOSFET transistors. The efficient geometry

500w mosfet power amplifier circuit diagram

Abstract: RF POWER MOSFET IXZ421DF18N50 500w hf power amplifier circuit diagram power mosfet triggering circuit DEIC421 mosfet triggering circuit 500w power amplifier PCB layout driver mosfet mosfet HF amplifier
Contextual Info: IXZ421DF18N50 RF Power MOSFET & DRIVER Driver / MOSFET Combination DEIC421 Driver combined with a IXZ318N50 MOSFET Gate driver matched to MOSFET Features • Isolated Substrate − high isolation voltage >2500V − excellent thermal transfer − Increased temperature and power cycling capability

4422 mosfet

Abstract: MOSFET 4420 Matching MOSFET Drivers to MOSFETs parallel mosfet 4469 mosfet use of zener diode 4420 mosfet mosfet 4468 4422 dual mosfet irf4501
Contextual Info: APPLICATION NOTE 30 MATCHING MOSFET DRIVERS TO MOSFETs MATCHING MOSFET DRIVERS TO MOSFETs AN-30 INTRODUCTION V TelCom offers many sizes of MOSFET drivers. This allows the designer to best match the switching performance of the driver/MOSFET to the application.

2n7224U

Abstract: IRFN150 JANTX2N7224U JANTXV2N7224U
Contextual Info: PD-91547B IRFN150 JANTX2N7224U JANTXV2N7224U HEXFET POWER MOSFET [REF:MIL-PRF-19500/592] N - CHANNEL Ω MOSFET 100Volt, 0.070Ω HEXFET® power MOSFET technology is the key to InternationalRectifier’s advanced line of power MOSFET transistors. The efficient geometry

"RF MOSFETs"

Abstract: "RF MOSFET" 731 MOSFET IXZ308N120 mosfet 440 mhz MOSFET RF POWER
Contextual Info: IXZ308N120 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Linear Switch 175MHz Mode RFRF MOSFET MOSFET Lo Capacitance Low CapacitanceZ-MOS Z-MOS MOSFET MOSFETProcess Process TMTM Optimized for RF Linear Operation Operation Ideal for Class AB C, D, & C, & EBroadcast

210T2S

Contextual Info: GU PhotoMOS AQS210TS, 210T2S TESTING GU PhotoMOS (AQS210TS, 210T2S) 3-channel (MOSFET & 2 optocoupler) or (2 MOSFET & optocoupler) SOP 16-pin type. 2 MOSFET Relay and 1 optocoupler type 10.37 .408 4.4 .173 2.1 .083 1 MOSFET Relay and 2 optocouplers type

Contextual Info: IXZ308N120 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Linear Switch 175MHz Mode RFRF MOSFET MOSFET Lo Capacitance Low CapacitanceZ-MOS Z-MOS MOSFET MOSFETProcess Process TMTM Optimized for RF Linear Operation Operation Ideal for Class AB C, D, & C, & EBroadcast

international rectifier

Abstract: IRFM260 4.5v to 100v input regulator
Contextual Info: PD - 91388C POWER MOSFET THRU-HOLE TO-254AA IRFM260 200V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFM260 0.060 Ω 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

irf 540 mosfet

Abstract: ls 7400 PD908 014 IR MOSFET Transistor IRFM064
Contextual Info: PD-90875C POWER MOSFET THRU-HOLE TO-254AA IRFM064 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFM064 RDS(on) 0.017 Ω ID 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

Contextual Info: PHOTOVOLTAIC MOSFET DRIVER APV1,2 PHOTOVOLTAIC MOSFET DRIVER (APV1,2) PHOTOVOLTAIC MOSFET DRIVER 6 Control circuit 1 2 3 4 Control circuit 1 4 2 3 FEATURES TYPICAL APPLICATIONS 1. High-speed switching Since release time is 0.1 ms, the MOSFET can be turned off quickly in

Contextual Info: FDB15N50 N-Channel UniFETTM MOSFET 500 V, 15 A, 380 mΩ Description Features UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching

IRFM054

Contextual Info: PD - 90709B POWER MOSFET THRU-HOLE TO-254AA IRFM054 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFM054 RDS(on) 0.027 Ω ID 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The

SMD1P

Abstract: 2N7222U IRFN440 JANTX2N7222U JANTXV2N7222U irfn44
Contextual Info: PD-91552B IRFN440 JANTX2N7222U JANTXV2N7222U HEXFET POWER MOSFET [REF:MIL-PRF-19500/596] N - CHANNEL Ω MOSFET 500 Volt, 0.85Ω Product Summary HEXFET® power MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry

Contextual Info: FDPF17N60NT N-Channel UniFETTM II MOSFET 600 V, 17 A, 340 mΩ Features Description • RDS on = 290 mΩ (Typ.) @ VGS = 10 V, ID = 8.5 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest onstate resistance among the planar MOSFET, and also provides

APV1121S

Contextual Info: PHOTOVOLTAIC MOSFET DRIVER APV1,2 PHOTOVOLTAIC MOSFET DRIVER (APV1,2) PHOTOVOLTAIC MOSFET DRIVER 6 Control circuit 1 2 4 1 4 Control circuit 3 3 2 FEATURES TYPICAL APPLICATIONS 1. High-speed switching Since release time is 0.1 ms, the MOSFET can be turned off quickly in