PD908 Search Results

pd908

Contextual Info: PD-90881A IRHE9130 IRHE93130 REPETITIVE AVALANCHE AND dv/dt RATED P-CHANNEL HEXFET TRANSISTOR W , RAD HARD HEXFET -100 Volt, 0.30W International Rectifier’s P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation doses as

PD908

Contextual Info: PD-90889E IRHM9150 JANSR2N7422 100V, P-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA REF: MIL-PRF-19500/662 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHM9150 100K Rads (Si) 0.080Ω ID -22A QPL Part Number

Contextual Info: PD-90885G IRHN9150 JANSR2N7422U 100V, P-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-1 REF: MIL-PRF-19500/662 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHN9150 100K Rads (Si) IRHN93150 300K Rads (Si) RDS(on)

2n7389

Abstract: IRF P CHANNEL MOSFET 10a IRF P CHANNEL MOSFET 10A 100V transistor IRF 630 IRHF9130 IRHF93130 JANSF2N7389 JANSR2N7389
Contextual Info: PD-90882 IRHF9130 IRHF93130 JANSR2N7389 JANSF2N7389 REPETITIVE AVALANCHE AND dv/dt RATED [REF: MIL-PRF-19500/630] P-CHANNEL HEXFET TRANSISTOR W , RAD HARD HEXFET -100 Volt, 0.30W International Rectifier’s P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability

JANSR2N7394U

Abstract: IRHN3054 IRHN4054 IRHN7054 IRHN8054
Contextual Info: PD-90884D RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-1 IRHN7054 JANSR2N7394U 60V, N-CHANNEL REF: MIL-PRF-19500/603 RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number IRHN7054 IRHN3054 IRHN4054 IRHN8054 Radiation Level 100K Rads (Si) 300K Rads (Si)

Contextual Info: PD-90875C POWER MOSFET THRU-HOLE TO-254AA IRFM064 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) 0.017 Ω IRFM064 ID 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

irf 540 mosfet

Abstract: ls 7400 PD908 014 IR MOSFET Transistor IRFM064
Contextual Info: PD-90875C POWER MOSFET THRU-HOLE TO-254AA IRFM064 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFM064 RDS(on) 0.017 Ω ID 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

pd908

Contextual Info: PD-90879D RADIATION HARDENED POWER MOSFET THRU-HOLE T0-204AE IRH9150 100V, P-CHANNEL RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRH9150 IRH93150 Radiation Level 100K Rads (Si) 300K Rads (Si) RDS(on) 0.075Ω 0.075Ω ID -22A -22A International Rectifier’s RADHard HEXFET® technology

pd908

Contextual Info: PD-90884D RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-1 IRHN7054 JANSR2N7394U 60V, N-CHANNEL REF: MIL-PRF-19500/603 RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number IRHN7054 IRHN3054 IRHN4054 IRHN8054 Radiation Level 100K Rads (Si) 300K Rads (Si)