FET IRF 540
Abstract: i287
Contextual Info: Data Sheet No. PD-9.875 INTERNATIONAL RECTIFIER I R AVALANCHE ENERGY RATED AND dv/dt RATED HEXFET TRANSISTOR IRFM064 : H N-CHANNEL 60 Volt, 0.017 Ohm HEXFET Product Summary The HEXFET® technology is the key to International Rectifier's advanced line of power M O S FE T transistors.
|
OCR Scan
|
irfm064o-254i-292fet irf 540+1i287
|
PDF
|
|
Contextual Info: PD-90875C POWER MOSFET THRU-HOLE TO-254AA IRFM064 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) 0.017 Ω IRFM064 ID 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
|
Original
|
pd-90875co-254aairfm064mil-prf-19500 |
PDF
|
irf 540 mosfet
Abstract: ls 7400 PD908 014 IR MOSFET Transistor IRFM064
Contextual Info: PD-90875C POWER MOSFET THRU-HOLE TO-254AA IRFM064 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFM064 RDS(on) 0.017 Ω ID 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
|
Original
|
pd-90875co-254aairfm064mil-prf-19500+4irf 540 mosfetls 7400pd908014 ir mosfet transistor
|
PDF
|
irf 540 mosfet
Abstract: IRFM064
Contextual Info: PD - 90875A POWER MOSFET THRU-HOLE TO-254AA IRFM064 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFM064 RDS(on) 0.017 Ω ID 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The
|
Original
|
0875ao-254aairfm064mil-prf-19500+1irf 540 mosfet
|
PDF
|
IRF460
Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Contextual Info: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,
|
Original
|
30am-544-0-1737-2comdb8029cirf460+9smd transistor marking k38smd transistor k38we 751002 ssmd-6ctransistor smd k45rad-hard igbtirf3504afl2805s manufactured by international rectifier550-065
|
PDF
|
IRFM9034
Abstract: irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261
Contextual Info: International Rectifier Government and Space Products BVDSS Part Number Channel V RDS(on) (Ω) PD @ TC = 25°C ID @ T =100°C C (A) ID @ T =25 C (A) Total Dose Rating Rads (Si) (W) Fax-on-Demand HEXFET Power MOSFETs to view a data sheet, click on the part number
|
Original
|
irhe7110irhe7130irhe7230irhe8110+13irhe8130irhe8230irhe9130irhe9230irhg7110irhg6110irfm9034irh7c50seirfm460irhyirfe310international rectifier pjansr2n7261
|
PDF
|
irf5n5210sc
Abstract: IRHNA57064SCS IRHM597260 irf5n5210 irhna597160scs irhf7110scs IRHG57110 IRHNA57264SESCS 35CLQ045SCS 12CLQ150SCS
Contextual Info: PD - 94246A IRHG567110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET 4# TECHNOLOGY THRU-HOLE MO-036AB Product Summary Part Number IRHG567110 IRHG563110 IRHG567110 IRHG563110 Radiation Level RDS(on) 100K Rads (Si)
|
Original
|
4246airhg567110mo-036abirhg563110+12o-254aa22jgq045scvirf5n5210scirhna57064scsirhm597260irf5n5210irhna597160scsirhf7110scsirhg57110irhna57264sescs35clq045scs12clq150scs
|
PDF
|
irfm9034
Contextual Info: 1 I n t e r n a t io n a l R e c t if ie r Government and Space Products Pvt Numb« 2 (3) bvdss (Vote) RDS(on) (Ohms) ID« Tc*2T (Amps) 10« TC=100“ (Amps) Pd O Tc«25° (Watts) Fax-onOamand Number Case Styl«, (Cas* (Min») (1) HEXFET Power MOSFETs Hermetic Package, N- and P-Channel
|
OCR Scan
|
irfaf30irfaf40irfaf50irfag30+7irfag40irfag50irf9130jantx2n6804jantxv2n6804irf9140irfm9034
|
PDF
|
2N7334
Abstract: irfg9110 H24 SMD
Contextual Info: Other Products from IR Government and Space H EX FET Power M O SFETs Radiation Hardened N - and P-Channel Part • d@ T ,= 25°C Iq@ Tq = 100*C A (A) RthJC Max. (K/W) Pd@ Tq = 25°C Number BVq ss (V) RDS(on) (Ohms) IRHE7110 100 IRHE8110 IRHE7130 IRHE8130
|
OCR Scan
|
irhe7110irhe8110irhe7130irhe8130+9irhe7230irhe8230irhe9130irhn7054irhn8054irhn71302n7334irfg9110h24 smd
|
PDF
|
10RIA10
Abstract: HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF
Contextual Info: Index International Rectifier Government and Space Products Level of Quality Part Number Rectifiers Voltage Current CECC Issue Issue Assessment and CECC V (A) Specs Number Date 50 000 Screen Level Options Fax-on-Demand CECC-Qualifed, Europe Mfg. in Italy
|
Original
|
do-203aahfa40hf120hfa40hf60o-254aa+15hfa35hb120hfa35hb120chfa35hb60hfa35hb60co-258aahfa45hc120c10ria10irfm903410ria10010ria12010ria2010ria4010ria60jansr2n726170hf
|
PDF
|
IRHNA57064SCS
Abstract: IRHNJ597230SCS IRHNJ9130SCS IRHG6110SCS IRHY7434 IRHE57130SCS 8CLJQ045SCV IRHNJ57034SCS irfy9230 35CLQ045SCS
Contextual Info: PD - 94046B RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ597230 200V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHNJ597230 100K Rads (Si) IRHNJ593230 300K Rads (Si) RDS(on) 0.505Ω 0.505Ω ID -8.0A -8.0A SMD-0.5
|
Original
|
94046birhnj597230irhnj593230o-254aa+1322jgq045scv22gq100scv25gq045scsirhna57064scsirhnj597230scsirhnj9130scsirhg6110scsirhy7434irhe57130scs8cljq045scvirhnj57034scsirfy923035clq045scs
|
PDF
|
IRFM064
Abstract: beryllium oxide international rectifier cds
Contextual Info: Data Sheet No. PD-9.875 INTERNATIONAL RECTIFIER I O R AVALANCHE ENERGY RATED AND dv/dt RATED HEXFET TRANSISTOR IRFMQ64 N-CHANNEL 60 Volt, 0.017 Ohm HEXFET Product Summary The HEXFE T® technology is the key to International Part Num ber BV q s S IR F M 0 6 4
|
OCR Scan
|
irfm064irfm064dirfm064uo-254+3mil-s-19500i-292beryllium oxide international rectifier cds
|
PDF
|
rectifier s4 79
Abstract: Y145W IRFM064 IRFM064D i292 BBV 32 transistors
Contextual Info: Data Sheet No. PD-9.875 INTERNATIONAL RECTIFIER IO R AVALANCHE ENERGY RATED AND dv/dt RATED HEXFET TRANSISTOR 60 Volt, 0.017 Ohm HEXFET IRFMQ64 Product Summary The HEXFET® technology is the key to International Part Number BVq s s Rectifier's advanced line of power M O SFET transistors.
|
OCR Scan
|
irfmq64irfm064dirfm064uo-254+6mil-s-19500rectifier s4 79y145wirfm064i292bbv 32 transistors
|
PDF
|
|
Contextual Info: International Government and Space HEXFET Power MOSFETs XORlRe cB fie r Hermetic Package N & P Channel Case •d @ TP = 25°C lp @ Tq = 100°C R thJC Max. Pd @ TC = 25°C Outline A (K/W) (W) Number (1) 0.04 (*> 35 28 1.0 125 0.027 35 35 0.83 150 60 0.017
|
OCR Scan
|
irfm044irfm054irfm064irfm140+62n7218jantx2n7218jantxv2n7218irfm1502n7224jantx2n7224
|
PDF
|
|
|
2N7550
Abstract: 2N7549 2n7545 2N7476T1 smd 92112 2N7546 IRHNJ9130SCS 2N7471 2N7426 2N7468
Contextual Info: Hi-Rel Products Shortform Hermetic MOSFETs High Voltage MOSFETs for PFC and Primary Switch Applications Hi-Rel Components Schottky and HEXFRED Products Hi-Rel Schottky Diodes Hi-Rel HEXFRED Diodes Hi-Rel Linear and Switching Regulators Fixed Voltage Regulators
|
Original
|
2n75502n75492n75452n7476t1+6smd 921122n7546irhnj9130scs2n74712n74262n7468
|
PDF
|
2N6764 JANTX
Abstract: 91447 IR2113L
Contextual Info: Government / Space Products Catalog of Available Documents Revised 5/11/99 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100 Radiation-Hardened HEXFET Description Datasheets IRH7054 IRH7130 IRH7150 IRH7230 IRH7250 IRH7250SE IRHF7330SE IRHF7430SE IRH7450
|
Original
|
irh7054irh7130irh7150irh7230+9irh7250irh7250seirhf7330seirhf7430seirh7450irh7450se2n6764 jantx91447ir2113l
|
PDF
|
jantxv2n7224
Abstract: 2N7225
Contextual Info: Government and Space Designer's Manual Table of Contents Section & Page No. HEXFET IRF S E R IE S .1-3
|
OCR Scan
|
irfg1102n7334jantx2n7334jantxv2n7334+6i-405fv064fv360fv460jantxv2n72242n7225
|
PDF
|
2N6782 JANTX
Abstract: 2N6758 JANTX 2N6756 JANTX 2N6766 JANTX 2N6792 JANTX 2N6796U 60022 2N7236 2n6806 jantx 2N6770 JANTX
Contextual Info: Government / Space Products Catalog of Available Documents Revised 8/27/98 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100 Radiation-Hardened HEXFET Document # Pages Date IRH7054 90883 5 Oct-96 IRH7150 90677 13 Oct-96 IRH7250 90697 13 Oct-96 IRH7450SE
|
Original
|
irh7054oct-96irh7150irh7250+13irh7450senov-96irh80542n6782 jantx2n6758 jantx2n6756 jantx2n6766 jantx2n6792 jantx2n6796u600222n72362n6806 jantx2n6770 jantx
|
PDF
|
IRHNJ597230SCS
Abstract: international rectifier SMD 30CLJQ100SCS IRHNJ597034SCS IRHG6110SCS IRHNJ57234SESCS IRFE130SCX 35CLQ045SCS IRHNJ597130SCS IRHNJ7430SESCS
Contextual Info: PD - 94047A RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ597130 100V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHNJ597130 100K Rads (Si) IRHNJ593130 300K Rads (Si) RDS(on) ID 0.205Ω -12.5A 0.205Ω -12.5A SMD-0.5
|
Original
|
4047airhnj597130irhnj593130o-254aa+1322jgq045scv22gq100scv25gq045scsirhnj597230scsinternational rectifier smd30cljq100scsirhnj597034scsirhg6110scsirhnj57234sescsirfe130scx35clq045scsirhnj597130scsirhnj7430sescs
|
PDF
|