MOSFET POWER Search Results

48V SMPS

Abstract: smps 48v 12v ISL6144 ISL6144IV ISL6144IVZA MO-220 0805 resistor package
Contextual Info: ISL6144 Data Sheet February 15, 2007 FN9131.3 High Voltage ORing MOSFET Controller Features The ISL6144 ORing MOSFET Controller and a suitably sized N-Channel power MOSFET s increases power distribution efficiency and availability when replacing a power ORing diode

smd diode 46A

Abstract: equivalent smd mosfet IRF7205 IC MOSFET QG KRF7205 ld smd transistor smd mosfet
Contextual Info: MOSFET IC SMD Type HEXFET Power MOSFET KRF7205 IRF7205 Features Adavanced Process Technology Ultra Low On-Resistance P-Channel MOSFET Surface Mount Dynamic dv/dt Rating Fast Switching Absolute Maximum Ratings Ta = 25 Symbol Rating Continuous Drain Current, VGS @ 10V @ TA = 25

e3p1

Abstract: MOSFET 1052 NTMSD3P102R2 NTMSD3P102R2G NTMSD3P102R2SG
Contextual Info: NTMSD3P102R2 FETKY P−Channel Enhancement−Mode Power MOSFET and Schottky Diode Dual SO−8 Package Features • High Efficiency Components in a Single SO−8 Package • High Density Power MOSFET with Low RDS on , Schottky Diode with Low VF • Independent Pin−Outs for MOSFET and Schottky Die

Si2301CDS

Contextual Info: Si2301CDS Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A)a 0.112 at VGS = - 4.5 V - 3.1 0.142 at VGS = - 2.5 V - 2.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 22N60 Power MOSFET HEXFET POWER MOSFET „ DESCRIPTION As the SMPS MOSFET, the UTC 22N60 uses UTC’s advanced technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.

FDFMA2P029Z

Abstract: a5200
Contextual Info: FDFMA2P029Z Integrated P-Channel PowerTrench MOSFET and Schottky Diode –20V, –3.1A, 95mΩ Features General Description MOSFET This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultraportable applications. It features a MOSFET with very low onstate resistance and an independently connected low forward

APV1121S

Contextual Info: PHOTOVOLTAIC MOSFET DRIVER APV1,2 PHOTOVOLTAIC MOSFET DRIVER (APV1,2) PHOTOVOLTAIC MOSFET DRIVER 6 Control circuit 1 2 4 1 4 Control circuit 3 3 2 FEATURES TYPICAL APPLICATIONS 1. High-speed switching Since release time is 0.1 ms, the MOSFET can be turned off quickly in

IRFH8330

Abstract: mosfet J 3305
Contextual Info: PD - 97652C IRFH8330PbF VDS VGS max RDS on max 30 V ± 20 V 6.6 (@VGS = 10V) (@VGS = 4.5V) 9.9 Qg typ. 9.3 ID 25 (@Tc(Bottom) = 25°C) HEXFET Power MOSFET mΩ nC i PQFN 5X6 mm A Applications • Control MOSFET for high frequency buck converters • Synchronous MOSFET for high frequency buck converters

RG107

Contextual Info: 4V Drive Nch MOSFET RSH125N03 Dimensions Unit : mm Structure Silicon N-channel MOSFET SOP8 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8) . Application Power switching, DC / DC converter.

Contextual Info: FDM3300NZ Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS ON @ VGS = 2.5v on

Contextual Info: 2SK3787-01MR 200311 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power TO-220F Applications Switching regulators

Contextual Info: 2SK3726-01MR 200305 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators

2sk3687-01mr

Contextual Info: 2SK3687-01MR 200311 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220F High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators

2SK3599-01MR

Abstract: 2sk3599 uninterruptible power supply
Contextual Info: 2SK3599-01MR 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings mm Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators

Contextual Info: TPD7211F TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD7211F Power MOSFET Gate Driver for half-bridge TPD7211F is a Power MOSFET gate driver for half-bridge circuit. BiCD process is applied on this product. Features z

Contextual Info: FDP8030L/FDB8030L N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

MCH3312

Abstract: CPH5854 SB1003M3 A05166 marking YG
Contextual Info: CPH5854 Ordering number : ENA0516 SANYO Semiconductors DATA SHEET CPH5854 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type containing a P-Channel MOSFET MCH3312 and a Schottky Barrier Diode (SB1003M3),

Contextual Info: FDS6614A N-Channel Logic Level PowerTrenchTM MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching

4025-C

Contextual Info: FDP6030BL/FDB6030BL N-Channel Logic Level PowerTrenchTM MOSFET General Description Features This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

SDC40

Contextual Info: 2SK2875-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply

7v71

Contextual Info: 2SK2760-01R FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-3PF Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply

Contextual Info: 2SK1088-MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- III SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High forward transconductance TO-220F15 Applications Motor controllers General purpose power amplifier

Contextual Info: 2SK2755-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-3P Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply

Contextual Info: 2SK2764-01R FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-3PF Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply