MOSFET 60A 200V Search Results

Contextual Info: 10-PZ06NRA069FP03-P967F78Y 10-FZ06NRA069FP03-P967F78 flow NPC 0 600V/60A & 99mΩ PS* Features flow 0 12mm housing ● *PS: 65A parallel switch 60A IGBT and 99mΩ MOSFET ● neutral point clamped inverter ● reactive power capability ● low inductance layout

IXFH60N20F

Abstract: IXFT60N20F
Contextual Info: Advance Technical Information IXFH60N20F IXFT60N20F HiPerRFTM Power MOSFET VDSS ID25 RDS on trr F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 200V 60A Ω 38mΩ 200ns TO-247 Symbol Test Conditions

Contextual Info: Advance Technical Information HiPerRFTM Power MOSFET VDSS ID25 IXFH60N20F IXFT60N20F RDS on trr F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 200V 60A Ω 38mΩ 200ns TO-247 Symbol Test Conditions

IXTH60N20L2 Linear Power MOSFET

Abstract: ixth60n20 60n20 IXTT60N20L2 IXTH60N20L2
Contextual Info: Advance Technical Information IXTT60N20L2 IXTQ60N20L2 IXTH60N20L2 Linear L2TM Power MOSFET w/ Extended FBSOA VDSS ID25 = 200V = 60A ≤ 45mΩ Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-268 (IXTT) G S Tab Symbol Test Conditions Maximum Ratings

Contextual Info: Advance Technical Information Linear L2TM Power MOSFET w/ Extended FBSOA VDSS ID25 IXTT60N20L2 IXTQ60N20L2 IXTH60N20L2 = 200V = 60A ≤ 45mΩ Ω RDS on TO-268 (IXTT) N-Channel Enhancement Mode Avalanche Rated G S Tab Symbol Test Conditions Maximum Ratings

60n20

Abstract: 60N20T IXTQ60N20T IXTA60N20T IXTP60N20T ixta 60N20T
Contextual Info: Preliminary Technical Information IXTA60N20T IXTP60N20T IXTQ60N20T TrenchTM Power MOSFET VDSS ID25 RDS on = 200V = 60A Ω ≤ 40mΩ TO-263 AA (IXTA) N-Channel Enhancement Mode For PDP Drivers Avalanche Rated G S D (Tab) TO-220AB (IXTP) Symbol Test Conditions

mosfet 60a 200v

Abstract: N-channel enhancement 200V 60A 100V 60A Mosfet APT20M38HLL 100V 60A Diode BSC 26 2121 apt20M38 apt20M38H
Contextual Info: APT20M38HLL 200V 60A 0.038Ω R POWER MOS 7 MOSFET TO-258 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

Contextual Info: TrenchTM Power MOSFET VDSS ID25 IXTA60N20T IXTP60N20T IXTQ60N20T RDS on = 200V = 60A Ω ≤ 40mΩ TO-263 AA (IXTA) N-Channel Enhancement Mode For PDP Drivers Avalanche Rated G S D (Tab) TO-220AB (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C

IXTP60N20T

Abstract: 60N20T IXTA60N20T 60n20 ixtq60n20t ixta 60N20T ixtp60n20 ixys 60n20t ixta60n2 ixta60n20
Contextual Info: IXTA60N20T IXTP60N20T IXTQ60N20T TrenchTM Power MOSFET VDSS ID25 RDS on = 200V = 60A Ω ≤ 40mΩ TO-263 AA (IXTA) N-Channel Enhancement Mode For PDP Drivers Avalanche Rated G S D (Tab) TO-220AB (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C

Contextual Info: JANSR2N7298 Formerly FRF450R4 Data Sheet Radiation Hardened, N-Channel Power MOSFET The Fairchild has designed a series of SECOND GENERATION hardened power MOSFETs of both NChannel and P-Channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as

la 4290

Abstract: 1E14 2E12 3E12 FRF450R4 JANSR2N7298
Contextual Info: JANSR2N7298 Formerly FRF450R4 Data Sheet Radiation Hardened, N-Channel Power MOSFET The Intersil has designed a series of SECOND GENERATION hardened power MOSFETs of both NChannel and P-Channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as

apm2558n

Abstract: apm2558 apm255 APM2558NU apm25
Contextual Info: APM2558NU N-Channel Enhancement Mode MOSFET Features • Pin Description 25V/60A, RDS ON =4.5mΩ (Typ.) @ VGS=10V G RDS(ON)=7.5mΩ (Typ.) @ VGS=4.5V • • • • Super High Dense Cell Design D S Reliable and Rugged Top View of TO-252 Avalanche Rated D

g30n60b3

Abstract: HGTG30N60B3 GE 443 HGTG30N60B3D LD26 TA49170 G30N60
Contextual Info: HGTG30N60B3 Data Sheet November 2000 60A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar

g30n60b3

Abstract: HGTG30N60B3 HGTG30N60B3D LD26 TA49170
Contextual Info: HGTG30N60B3 Data Sheet November 2004 60A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar

G30N60B3

Abstract: GE 443 HGTG30N60B3 HGTG30N60B3D LD26 TA49170
Contextual Info: HGTG30N60B3 Data Sheet December 2001 60A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar

G30N60B3

Abstract: HGTG30N60B3 LD26 TA49170
Contextual Info: HGTG30N60B3 Data Sheet January 2000 60A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar

g30n60b3

Abstract: G30N60 HGTG30N60B3 TA49170 HGTG30N60B3D LD26 DIODE B2 IC2560
Contextual Info: HGTG30N60B3 Data Sheet August 2003 60A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar

g30n60b3

Abstract: HGTG30N60B3
Contextual Info: HGTG30N60B3 Data Sheet December 2001 60A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar

IRF P CHANNEL MOSFET 200V 20A

Abstract: P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252
Contextual Info: 30V 1000V 200V 100V 0.014Ω 60V RF1S9630SM Note 200V, 6.5A, 0.800Ω RF1S4N100SM 1000V, 4.3A, 3.500Ω RF1S630SM 200V, 9A, 0.400Ω 0A TO 10A S E M I C O N D U C TO R 3.500Ω 0.800Ω 0.500Ω 0.400Ω 0.18Ω 0.300Ω 0.200Ω 0.160Ω 0.080Ω 0.077Ω

IXTR120P20T

Contextual Info: Preliminary Technical Information IXTR120P20T TrenchPTM Power MOSFET VDSS ID25 RDS on trr P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = = ≤ ≤ - 200V - 90A Ω 32mΩ 300ns ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings

Contextual Info: Preliminary Technical Information IXTN120P20T TrenchPTM Power MOSFET VDSS ID25 RDS on trr D P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = = ≤ ≤ - 200V - 106A Ω 30mΩ 300ns G miniBLOC E153432 S S S G Symbol Test Conditions VDSS

Contextual Info: IXFR120N20 HiPerFETTM Power MOSFET VDSS ID25 RDS on trr (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = =   200V 105A  19.5m 250ns ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS

transistor 3005

Abstract: transistor 3005 2 CT60AM-20 transistor FS 20 SM L 3005 TRANSISTOR CT60AM20 transistor TO-220 Outline Dimensions K 4005 transistor resonant inverter ct FS 8201
Contextual Info: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT60AM-20 RESONANT INVERTER USE OUTLINE DRAWING Dimensions in mm 5 20MAX. >3.2 «— © 0.5 5.45 5.45 • V ces . 1000V © © © GATE COLLECTOR EMITTER

Contextual Info: APTMC120TAM33CTPAG VDSS = 1200V RDSon = 33mΩ max @ Tj = 25°C ID = 78A @ Tc = 25°C Triple phase leg SiC MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features