IXFH60N20F
Abstract: IXFT60N20F
Contextual Info: Advance Technical Information IXFH60N20F IXFT60N20F HiPerRFTM Power MOSFET VDSS ID25 RDS on trr F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 200V 60A Ω 38mΩ 200ns TO-247 Symbol Test Conditions
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ixfh60n20fixft60n20f200nso-247+1338b2
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Contextual Info: Advance Technical Information HiPerRFTM Power MOSFET VDSS ID25 IXFH60N20F IXFT60N20F RDS on trr F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 200V 60A Ω 38mΩ 200ns TO-247 Symbol Test Conditions
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ixfh60n20fixft60n20f200nso-247+2-55om338b2
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IRF1830G
Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
Contextual Info: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23
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ao4405ao4407ao4408ao4409+16ao4410ao4411ao4413ao4415ao4422ao4700irf1830girf1830transistor irf1830gapm2054n equivalentapm2054nap85l02hap70n03s2sk3683ap70l02h2sk2696
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7N60B equivalent
Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches
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ms-01310-pin5m-1994mo-229+107n60b equivalent18n50 equivalentixgh 1499mosfet smd 4407ixdd 614c 547 b w57 bjt transistorr1275ns20lr1271ns12cixys cs 20-22 mof1ixtp 220n04t2
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IXFD21N100F-8F
Abstract: IXFD38N100Q2-95 DIODE 1581 IXYS IXFK21N100Q IXFH40N30 IXFH40N50Q IXFK38N80Q2 7Y 6 IXFB50N80Q2 IXFN80N50
Contextual Info: Chip-Shortform2004.pmd HiPerFETTM Power MOSFET Type VDSS max. RDS ON max. Chip type Chip size dimensions Source bond wire recommended Equivalent device data sheet 8 26.10.2004, 12:44 V Ω mm mils IXFD76N07-7X IXFD180N07-9X IXFD340N07-9Y 70 0.015 0.007 0.005
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ixfd76n07-7xixfd180n07-9xixfd340n07-9yixfd180n085-9x+16ixfd280n085-9yixfd75n10-7xixfd80n10q-8xixfd170n10-9xixfd230n10-9yixfd70n15-7xixfd21n100f-8fixfd38n100q2-95diode 1581ixys ixfk21n100qixfh40n30ixfh40n50qixfk38n80q27y 6ixfb50n80q2ixfn80n50
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102N06
Abstract: DE275X2-102N06A PLUS247 501N2 DE275-501N16A DE475-501N44A H12N50 DE475-102N21A ISOPLUS247 IXFX
Contextual Info: 500KHz-82MHz POWER MOSFETS O SWITCH MODE POWER SUPPLIES & RF GENERATORS January 2003 The IXYS RF Switch Mode MOSFET family is ideal for applications requiring fast switching including laser driver, induction heating, switch mode power supplies and other non-linear industrial applications. An extensive product
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500khz-82mhzo-247plus247isoplus247+8102n06de275x2-102n06a501n2de275-501n16ade475-501n44ah12n50de475-102n21aixfx
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