IXTA60N20T Search Results

IXTA60N20T Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXTA60N20T		IXYS	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 200V 60A TO-263	Original	PDF	135.64KB

IXTA60N20T Price and Stock

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IXYS Corporation


IXYS Corporation IXTA60N20T MOSFETs 60 Amps 200V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXTA60N20T					1 - 10 - 100 - 1000 $2.90 10000 $2.90	Get Quote
TTI	IXTA60N20T	Tube			300	1 - 10 - 100 - 1000 $2.81 10000 $2.76	Buy Now
IXYS Corporation IXTA60N20T-TRL MOSFETs IXTA60N20T TRL
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Mouser Electronics	IXTA60N20T-TRL					1 - 10 - 100 - 1000 $2.69 10000 $2.69	Get Quote

IXTA60N20T Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IXTP60N20T Abstract: 60N20T IXTA60N20T 60n20 ixtq60n20t ixta 60N20T ixtp60n20 ixys 60n20t ixta60n2 ixta60n20 Contextual Info: IXTA60N20T IXTP60N20T IXTQ60N20T TrenchTM Power MOSFET VDSS ID25 RDS on = 200V = 60A Ω ≤ 40mΩ TO-263 AA (IXTA) N-Channel Enhancement Mode For PDP Drivers Avalanche Rated G S D (Tab) TO-220AB (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C	Original	IXTA60N20T IXTP60N20T IXTQ60N20T O-263 O-220AB 062in. 60N20T IXTP60N20T IXTA60N20T 60n20 ixtq60n20t ixta 60N20T ixtp60n20 ixys 60n20t ixta60n2 ixta60n20	PDF
60n20 Abstract: 60N20T IXTQ60N20T IXTA60N20T IXTP60N20T ixta 60N20T Contextual Info: Preliminary Technical Information IXTA60N20T IXTP60N20T IXTQ60N20T TrenchTM Power MOSFET VDSS ID25 RDS on = 200V = 60A Ω ≤ 40mΩ TO-263 AA (IXTA) N-Channel Enhancement Mode For PDP Drivers Avalanche Rated G S D (Tab) TO-220AB (IXTP) Symbol Test Conditions	Original	IXTA60N20T IXTP60N20T IXTQ60N20T O-263 O-220AB 60N20T 60n20 IXTQ60N20T IXTA60N20T IXTP60N20T ixta 60N20T	PDF
Contextual Info: TrenchTM Power MOSFET VDSS ID25 IXTA60N20T IXTP60N20T IXTQ60N20T RDS on = 200V = 60A Ω ≤ 40mΩ TO-263 AA (IXTA) N-Channel Enhancement Mode For PDP Drivers Avalanche Rated G S D (Tab) TO-220AB (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C	Original	IXTA60N20T IXTP60N20T IXTQ60N20T O-263 O-220AB 60N20T	PDF
IXGP70N33 Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250 Contextual Info: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim	Original	D-68623 IXBOD1-08 IXBOD1-09 IXBOD1-10 DSEP30-06BR DSEP30-12CR IXGP70N33 IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250	PDF