APT20M38 Search Results

APT20M38BVFR

Abstract: APT20M38BVFRG APT20M38SVFR APT20M38SVFRG
Contextual Info: 200V 67A APT20M38BVFR 0.038Ω Ω APT20M38SVFR APT20M38BVFRG* APT20M38SVFRG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS V FREDFET BVFR D3PAK Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect,

Contextual Info: • R A dvan c ed r M po w er APT20M38BVFR Te c h n o lo g y 200V POWER MOS V o.o38q 67A FREDFET Pow er M OS V is a new generation o f high voltage N -C hannel enhancem ent m ode pow er M O S FE Ts. This new technolo gy m inim izes the JF E T effect, increases packing d ensity and reduces the on-resistance. Power M OS V®

APT20M38BVFR

Abstract: APT20M38SVFR
Contextual Info: APT20M38BVFR APT20M38SVFR 67A 0.038Ω Ω 200V POWER MOS V FREDFET BVFR D3PAK Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also

Contextual Info: • R A dvanced W .\A APT20M38BVR pow er Te c h n o l o g y “ 200V 67a o.o 38q POWER MOS V Pow er M OS V is a new generation of high voltage N -C hannel enhancem ent m ode pow er M O SFE Ts. This new tech no lo gy m inim izes the JFE T effect, increases packing density and reduces the on-resistance. Pow er M OS V®

Contextual Info: 200V 67A APT20M38BVFR 0.038Ω Ω APT20M38SVFR APT20M38BVFRG* APT20M38SVFRG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. BVFR POWER MOS V FREDFET D3PAK Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect,

APT20M38BVR

Contextual Info: APT20M38BVR 67A 0.038Ω 200V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

sm 0038

Abstract: 0038Q
Contextual Info: A dvanced APT20M38BVR pow er Te c h n o lo g y 200V 67A 0.038Q POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

APT20M38BVFR

Contextual Info: APT20M38BVFR 200V POWER MOS V 67A 0.038Ω FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

APT20M38BVR

Abstract: apt20M38
Contextual Info: APT20M38BVR 67A 0.038Ω 200V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

mosfet 60a 200v

Abstract: N-channel enhancement 200V 60A 100V 60A Mosfet APT20M38HLL 100V 60A Diode BSC 26 2121 apt20M38 apt20M38H
Contextual Info: APT20M38HLL 200V 60A 0.038Ω R POWER MOS 7 MOSFET TO-258 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

APT20M38BVFR

Contextual Info: APT20M38BVFR 67A 0.038Ω 200V POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V

diode um 67A

Abstract: 0038Q
Contextual Info: APT20M38SVR A dvanced P ow er T e c h n o lo g y 9 200V 67A 0.038Q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V

APT20M38BVR

Contextual Info: APT20M38BVR 67A 0.038Ω 200V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

0038Q

Contextual Info: A dvanced APT20M38SVR pow er Te c h n o lo g y 200V P O W E R 67A 0.038Q M O S V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT20M38BVFR A dvanced P o w er Te c h n o l o g y 200V POWER MOS V i 67A 0.038Í1 FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V

APT20M38SVR

Contextual Info: APT20M38SVR 67A 0.038Ω 200V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

APT20M38SVR

Contextual Info: APT20M38SVR 67A 0.038Ω 200V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

Contextual Info: APT20M38BVFR A dvanced P o w er Te c h n o l o g y 200V POWER MOS V 67A 0.038Í2 0FREDFET } Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V

4500 MOS

Contextual Info: APT20M38BVR A dvanced P o w er Te c h n o l o g y 200V 67A 0.038Í2 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V

Contextual Info: APT20M38SVR A dvanced P o w er Te c h n o l o g y 200V 67A 0.038Í1 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V

BD119

Abstract: BC148A APT1002RBNR 1000 volt npn BD109 APT5025AN APT904R2BN BD107 APT1001R3AN APT1004RBNR
Contextual Info: STI Type: AD818 Notes: Polarity: NPN Power Dissipation: .50 VCEO: 20 hFE min: 200 hFE max: 600 hFE A: .01 Matching hFE: 10 Matching VBE: 2.0 Tracking: 5.0 Case Style: TO-71 Industry Type: AD818 STI Type: AD818DIE Industry Type: AD818DIE V CEO: 25 ICBO ICEX: 20

SP6-P

Abstract: N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter
Contextual Info: Power Matters POWER PORTFOLIO 2011-2012 Power Semiconductors Power Modules RF Power MOSFETs Power Products Group About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.

nt 6600 G

Abstract: APT60M75JVR APT30M40JVR APT20M45B APT50M50JVR apt12080jvr 130-131 apt5014lvr APT5020BVFR apt40m70jvr
Contextual Info: MOSFET Selector Guide ADVANCED POW ER Te c h n o l o g y APT » V,>ss ^DS ON ID(cont) C JP F ) Part Number Volts Ohms Amps Watts Typ APT1201R6BVR 1200 1.600 8 280 3050 APT1201R5BVR 1.500 10 370 3700 APT1001RBVR 11 280 3050 1000 1.000 APT10086BVR 0.860 13 370 3700

catalog mosfet Transistor smd

Abstract: APTGU140A60T APTGU180DA120 military resistors catalog APTLM50H10FRT APT40M35JVFR 24 volt output smps design APT5SC120K APT50M50JVR induction furnace using igbt
Contextual Info: 1 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance