MO036AB Search Results

SMD 7150

Abstract: 57034 57Z30 IRHN SMD23 7130
Contextual Info: Rad Hard MOSFET Reference Guide NEW Mega Rad Product Matrix IRHNJ SMD-.5 IRHF TO39 IRH TO3 IRHM TO254 IRHG IRHQ MO036AB LCC 28 HEX BVDSS VOLTS 1 100 1 100 7110 1 200 7210 1 250 3 30 57Z30* 57Z30* 57Z30* 57Z30* 3 60 57034* 57034* 57034* 57034* 3 100 57130*

2n7612

Abstract: 4.5V to 100v input regulator
Contextual Info: PRELIMINARY PD-97178 2N7612M1 IRHLG77110 100V, Quad N-CHANNEL RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE MO-036AB TECHNOLOGY ™ Product Summary Part Number Radiation Level RDS(on) IRHLG77110 100K Rads (Si) 0.22Ω IRHLG73110 300K Rads (Si) 0.22Ω

IRF460

Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Contextual Info: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,

IRHG6110

Abstract: IRHG63110 MO-036AB
Contextual Info: PD - 93783E IRHG6110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET MOSFET TECHNOLOGY THRU-HOLE MO-036AB Product Summary Part Number Radiation Level RDS(on) IRHG6110 100K Rads (Si) 0.6Ω IRHG63110 300K Rads (Si) 0.6Ω

IR2110

Abstract: IR2110S IR2113L6 IRFBC20 IRFBC30 IRFBC40 IRFPE50 MO-036AB
Contextual Info: PD - 91883 IR2113L6 HIGH AND LOW SIDE DRIVER Product Summary Features n Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 10 to 20V n Undervoltage lockout for both channels

IRHG9110

Abstract: IRHG93110 MO-036AB
Contextual Info: PD - 93819B IRHG9110 100V, QUAD P-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE MO-036AB RAD-Hard HEXFET MOSFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHG9110 100K Rads (Si) 1.1Ω IRHG93110 300K Rads (Si) 1.1Ω ID -0.75A

IRHG593110

Abstract: IRHG597110 MO-036AB
Contextual Info: PD - 94431 IRHG597110 RADIATION HARDENED POWER MOSFET THRU-HOLE MO-036AB 100V, Quad P-CHANNEL RAD-Hard HEXFET 4# TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHG597110 100K Rads (Si) 0.96Ω -0.96A IRHG593110 300K Rads (Si)

IRFG110

Abstract: JANTX2N7334 JANTXV2N7334 MO-036AB
Contextual Info: PD-90396H POWER MOSFET THRU-HOLE MO-036AB IRFG110 JANTX2N7334 JANTXV2N7334 REF:MIL-PRF-19500/597 100V, QUAD N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFG110 0.7 Ω 1.0A HEXFET® MOSFET technology is the key to International

vp22

Contextual Info: International Government and Space Products I8R Rectifier Control Integrated Circuits Part Number VS Offset VBS, VCC IOUT Supply Voltage Supply Voltage Sink. Source V (AJ •> (V| Fax on Demand Number High & Low Side Driver LCC I R 2 I I0 E 4 -4 t o 400

305j

Abstract: MO-036AB
Contextual Info: Case Outline and Dimensions - MO-036AB CIC LEAD o A S S IG N M E N T S Q CO to > i= o zn C/1 O > o A 14 s i-r o 13 .2 S O o 14X 0"- 15* 7 .6 2 NOTES: 1. D IMENSIONING & T O L E E A N C IN G EEE A S M E Y 1 4 . 5 M - 1 9 9 4 . CO N TEO LLING DIMENSION: INCH.

Contextual Info: PD-93921D RIC7113L4 RADIATION HARDENED HIGH AND LOW SIDE GATE DRIVER Features Product Summary n Total dose capability to 100K Rad Si n Floating channel designed for bootstrap operation n Fully operational to +400V n Tolerant to negative transient voltage

2N7334

Abstract: 2N7334 JANTX
Contextual Info: 2N7334 Qualified Levels: JAN, JANTX, and JANTXV QUAD N-CHANNEL MOSFET Available on commercial versions Qualified per MIL-PRF-19500/597 DESCRIPTION This 2N7334 device is military qualified up to a JANTXV level for high-reliability applications. Microsemi also offers numerous other products to meet higher and lower power voltage

IRHG7110

Abstract: MO-036AB 31VDS
Contextual Info: uaia aieei no. ku-s .ö/ua INTERNATIONAL RECTIFIER AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS IRHG711Q N-CHANNEL RAD HARD 100 Volt, 0.70®, RAD HARD HEXFET Product Summary international Rectifier’s MEGA RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability and breakdown

IR2110L6

Abstract: IRFBC20 IRFBC30 IRFBC40 IRFPE50 MO-036AB
Contextual Info: Previous Datasheet Index Next Data Sheet Data Sheet No. PD-6.074 IR2110L6 HIGH AND LOW SIDE DRIVER Features Product Summary n Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 10 to 20V

Contextual Info: PRELIMINARY PD-95865B 2N7618M1 IRHLG770Z4 60V, Quad N-CHANNEL RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE MO-036AB TECHNOLOGY ™ Product Summary Part Number Radiation Level RDS(on) ID IRHLG770Z4 100K Rads (Si) 0.6Ω 1.07A IRHLG730Z4 300K Rads (Si)

Contextual Info: PRELIMINARY PD-97178 2N7612M1 IRHLG77110 100V, Quad N-CHANNEL RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE MO-036AB TECHNOLOGY ™ Product Summary Part Number Radiation Level RDS(on) IRHLG77110 100K Rads (Si) 0.22Ω IRHLG73110 300K Rads (Si) 0.22Ω

IRFM9034

Abstract: irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261
Contextual Info: International Rectifier Government and Space Products BVDSS Part Number Channel V RDS(on) (Ω) PD @ TC = 25°C ID @ T =100°C C (A) ID @ T =25 C (A) Total Dose Rating Rads (Si) (W) Fax-on-Demand HEXFET Power MOSFETs to view a data sheet, click on the part number

IRHG3110

Abstract: IRHG4110 IRHG7110 IRHG8110 MO-036AB
Contextual Info: PD - 90670A IRHG7110 100V, QUAD N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE MO-036AB RAD-Hard HEXFET MOSFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHG7110 100K Rads (Si) 0.6Ω IRHG3110 300K Rads (Si) 0.6Ω IRHG4110

Contextual Info: 2N7335 Qualified Levels: JAN, JANTX, and JANTXV QUAD P-CHANNEL MOSFET Available on commercial versions Qualified per MIL-PRF-19500/599 DESCRIPTION This 2N7335 device is military qualified up to a JANTXV level for high-reliability applications. Microsemi also offers numerous other products to meet higher and lower power voltage

irf5n5210sc

Abstract: IRHNA57064SCS IRHM597260 irf5n5210 irhna597160scs irhf7110scs IRHG57110 IRHNA57264SESCS 35CLQ045SCS 12CLQ150SCS
Contextual Info: PD - 94246A IRHG567110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET 4# TECHNOLOGY THRU-HOLE MO-036AB Product Summary Part Number IRHG567110 IRHG563110 IRHG567110 IRHG563110 Radiation Level RDS(on) 100K Rads (Si)

Contextual Info: PD - 90397F POWER MOSFET THRU-HOLE MO-036AB IRFG9110 JANTX2N7335 JANTXV2N7335 REF:MIL-PRF-19500/599 100V, QUAD P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFG9110 RDS(on) I D 1.4Ω -0.75A HEXFET® MOSFET technology is the key to International

transistor BC 458

Abstract: transistor BC 945 ac 1084 transistor bc 577 Transistor BC 585 MS-015-AB TRANSISTOR A42 bd 743 transistor uA109 CA 358 AE
Contextual Info: Hermetic Dimensional/Thermal Data The following table identifies all of the hermetic package configurations and pin counts per package type offered by National Semiconductor. In addition, the table provides dimensional and thermal data for each of the ceramic and

IRGAC50

Abstract: MO036AA IRGAC50U IRGAC50F
Contextual Info: HU m saa In t e r n a t i o n a l R e c t i f i e r Government and Space Products Control Integrated Circuits Vs Offset Supply Voltage Volts PMt Number Fax-onDemand Number lOUT VBS.VCC SupplyVoltage (Volts) Slnk, Source (Amps) Case Style, (CaseOutline) (1)

irfm9034

Contextual Info: 1 I n t e r n a t io n a l R e c t if ie r Government and Space Products Pvt Numb« 2 (3) bvdss (Vote) RDS(on) (Ohms) ID« Tc*2T (Amps) 10« TC=100“ (Amps) Pd O Tc«25° (Watts) Fax-onOamand Number Case Styl«, (Cas* (Min») (1) HEXFET Power MOSFETs Hermetic Package, N- and P-Channel