MMBR9 Search Results

MMBR911LT1

Abstract: MMBR911MLT1
Contextual Info: MMBR911MLT1 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The MMBR911MLT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. ! Low noise-2.9dB@1GHz ! Low cost SOT23 package

Contextual Info: MOTOROLA Order this document by MMBR920LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor MMBR920LT1 Designed for thick and thin–film circuits using surface mount components and requiring low–noise, high–gain signal amplification at frequencies to 1.0

Contextual Info: MMBR911LT1 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The MMBR911LT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. ! Low noise-2.9dB@1GHz ! Low cost SOT23 package IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

Contextual Info: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Order this document by MMBR941LT1/D The RF Line NPN Silicon Low Noise, High-Frequency Transistors MMBR941 MRF947 SERIES Designed for use in high gain, low noise small–signal amplifiers. This series

Contextual Info: MMBR911LT1 RF & MICROWAVE TRANSISTORS DESCRIPTION KEY FEATURES ! High FTau-6.0 GHz EL PR The MMBR911LT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. ! Low noise-2.9dB@1GHz ! Low cost SOT23 package IMPORTANT: For the most current data, visit: http://www.advancedpower.com

Contextual Info: MOTOROLA Order this document by MMBR901LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line MMBR901LT1,T3 NPN Silicon High-Frequency Transistor Designed primarily for use in high-gain, low-noise small-signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching

Contextual Info: MMBR951ALT1 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)10 V(BR)CBO (V)20 I(C) Max. (A)100m Absolute Max. Power Diss. (W)322# Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)10

Contextual Info: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 MMBR901L Silicon NPN RF Transistor DESCRIPTION • Low Noise • High Power Gain- SOT- 2 3 package G p e = 1 2 . 0 d B T Y P . @ f = 1 GHz &" ^^

MMBR941L

Contextual Info: , One. j C/ 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 MMBR941L Silicon NPN RF Transistor DESCRIPTION • Low Noise • High Current-Gain Bandwidth Product ^_ APPLICATIONS • Designed for use in high gain , low noise small-signal

z141

Abstract: transistor motorola 114-8 ADC 808 cm 45-12 MRF947 mmbr941 MRF947B mrf947t1 characteristics MRF947T1 data sheet MMBR941BLT1
Contextual Info: O rder this docum ent by MMBR941LT1/D The RF Line NPN Silicon Low Noise, High-Frequency Transistors MMBR941 MRF947 SERIES D e s ig n e d fo r u s e in h ig h g a in , lo w n o is e s m a ll- s ig n a l a m p lifie rs . T h is s e rie s fe a tu re s e x c e lle n t b ro a d b a n d lin e a rity a n d is o ffe re d in a v a rie ty o f p a c k a g e s .

MRF9411L

Abstract: 9411L MRF941 motorola MRF S2GJ
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF941 MMBR941L MRF9411L The RF Line NPIM Silicon Low Noise, High-Frequency Transistors lC = 50 mA LOW NOISE HIGH FREQUENCY TRANSISTORS . . . desig ned fo r use in high gain, low n oise sm all-sig n al am p lifiers. T h is se rie s featu res

MPS911

Abstract: 75RC tjm sot23 MBR911 2223 TO-92
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MMBR911LT1 MPS911 NPN Silicon High-Frequency Transistors D esigned for low noise, w ide dyn a m ic range fro n t-e n d am p lifie rs and low -noise VCO's. Available in a surface-m ountable plastic package, as well as

MMBR901LT1

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon H igh-Frequency Transistor MMBR901LT1, T3 MRF9011LT1 Designed primarily for use in high-gain, low-noise small-signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching

mrf947t1 characteristics

Abstract: MRF947 MRF947AT1 MMBR941LT1 mrf947t1 transistor af 178 MMBR941 MMBR941BLT1 MRF947BT1 NF50
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Order this document by MMBR941LT1/D The RF Line NPN Silicon Low Noise, High-Frequency Transistors MMBR941 MRF947 SERIES Designed for use in high gain, low noise small–signal amplifiers. This series

FHC30LG

Abstract: ne72089 KC535C NE388-06 AL307BM IC 78L12 SOT89 KC535B AL307 79L05 hearing aid lm358
Contextual Info: RF TRANSISTORS Type P - p- n-p N - n-p-n MMBR5031 2SA1778 2SC3770 2SC4269 MMBR5179 2SC3837K 2SC3545 2SC3771 2SA1669 2SC4364 2SC4270 2SC4365 2SC3838K BFS17,BFS17A 2SC3841 BFR92A BFR93 2SC4569 BFR93P 2SC3774 BFR92P 2SC3775 BFR93A BFR92 2SC4568 2SC4857 MMBR911

Contextual Info: MMBR911 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)12 V(BR)CBO (V)20 I(C) Max. (A)60m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC)-55þ Maximum Operating Temp (øC)150þ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition)15

MRF951

Contextual Info: Order this data sheet by MRF951/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Low Noise, High-Frequency Transistors r MRF951 MMBR951,L MRF9511,L . . . designed for use in high gain, low noise small-signal amplifiers. This series features

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMBR901 Description • • • • • • NPN Silicon High-Frequency Transistor High Current-Gain – Bandwidth Products

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMBR901 Description • • • • • NPN Silicon High-Frequency Transistor High Current-Gain – Bandwidth Products Low Noise Figure @ f=1.0GHz – NF matched =1.9dB (Typ)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 MMBR901LT1，T3 1. BASE TRANSISTOR（ NPN ） 2. EMITTER 3. COLLECTOR １．０ FEATURES Power dissipation PCM : 0.3 W（Tamb=25℃） Collector current ICM :

MMBR2857

Abstract: MMBR2060 MMBR2857 MOTOROLA MMBF4860 MMBR5031 MMBR930 MMBR931 MMBFU310 MMBR5179 BFS17 E1
Contextual Info: SURFACE MOUNT PRODUCTS — SOT 23 continued RF SOT-23 Transistors Pinout: 1-Base, 2-Emitter, 3-C ollector NPN Device Marking Typ (GHz) •C (mA) MMBR930 BFR92 BFR92A BFR93 BFR93A MMBR931 MMBR2060 MMBR5179 MMBR920 MMBR901 MMBR5031 MMBR2857 BFS17 BFS175 VCF (V)

Contextual Info: MOTOROLA Order this document by MMBR920LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon MMBR920LT1, T3 High-Frequency Transistor . . . designed for thick and thin–film circuits using surface mount components and requiring low–noise, high–gain signal amplification at frequencies to 1.0

MRF941

Abstract: mrf9411
Contextual Info: MOTOROLA Order this document by MMBR941LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line MMBR941 NPN Silicon MRF941 Low Noise, High-Frequency MRF947 Transistors Designed for use in high gain, low noise small–signal amplifiers. This series features excellent broadband linearity and is offered in a variety of packages.

mps901

Abstract: MRF901
Contextual Info: MOTOROLA Order this document by MMBR901LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon MMBR901LT1, T3 High-Frequency Transistor MPS901 MRF901 Designed primarily for use in high–gain, low–noise small–signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching