MMBR901 Search Results

Contextual Info: MOTOROLA Order this document by MMBR901LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line MMBR901LT1,T3 NPN Silicon High-Frequency Transistor Designed primarily for use in high-gain, low-noise small-signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching

Contextual Info: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 MMBR901L Silicon NPN RF Transistor DESCRIPTION • Low Noise • High Power Gain- SOT- 2 3 package G p e = 1 2 . 0 d B T Y P . @ f = 1 GHz &" ^^

MMBR901LT1

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon H igh-Frequency Transistor MMBR901LT1, T3 MRF9011LT1 Designed primarily for use in high-gain, low-noise small-signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMBR901 Description • • • • • • NPN Silicon High-Frequency Transistor High Current-Gain – Bandwidth Products

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMBR901 Description • • • • • NPN Silicon High-Frequency Transistor High Current-Gain – Bandwidth Products Low Noise Figure @ f=1.0GHz – NF matched =1.9dB (Typ)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 MMBR901LT1，T3 1. BASE TRANSISTOR（ NPN ） 2. EMITTER 3. COLLECTOR １．０ FEATURES Power dissipation PCM : 0.3 W（Tamb=25℃） Collector current ICM :

MMBR2857

Abstract: MMBR2060 MMBR2857 MOTOROLA MMBF4860 MMBR5031 MMBR930 MMBR931 MMBFU310 MMBR5179 BFS17 E1
Contextual Info: SURFACE MOUNT PRODUCTS — SOT 23 continued RF SOT-23 Transistors Pinout: 1-Base, 2-Emitter, 3-C ollector NPN Device Marking Typ (GHz) •C (mA) MMBR930 BFR92 BFR92A BFR93 BFR93A MMBR931 MMBR2060 MMBR5179 MMBR920 MMBR901 MMBR5031 MMBR2857 BFS17 BFS175 VCF (V)

mps901

Abstract: MRF901
Contextual Info: MOTOROLA Order this document by MMBR901LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon MMBR901LT1, T3 High-Frequency Transistor MPS901 MRF901 Designed primarily for use in high–gain, low–noise small–signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching

Contextual Info: MOTOROLA Order this document by MMBR901LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line MMBR901LT1, T3 NPN Silicon High-Frequency Transistor Designed primarily for use in high–gain, low–noise small–signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching

MMBR901L

Abstract: motorola t3 switch RF NPN POWER TRANSISTOR 2.5 GHZ MMBR901LT1 RF TRANSISTOR 1 WATT
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MMBR901LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line MMBR901LT1, T3 NPN Silicon High-Frequency Transistor Designed primarily for use in high–gain, low–noise small–signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching

Contextual Info: MMBR901 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)25 I(C) Max. (A)30m Absolute Max. Power Diss. (W)350m Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition)15

Contextual Info: MMBR901LT3 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)25 I(C) Max. (A)30m Absolute Max. Power Diss. (W)300m# Minimum Operating Temp (øC) Maximum Operating Temp (øC)125õ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition)15

MMBR901

Abstract: MRF9011LT1 MRF9011MLT1 MMBR901MLT1
Contextual Info: MMBR901MLT1/MRF9011MLT1 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The MMBR901LT1/MRF9011LT1 are low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. ! Low noise-1.8dB@1GHz ! Low cost SOT23/SOT143

MMBR901LT1

Contextual Info: MOTOROLA Order this document by MMBR901LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line MMBR901LT1, T3 NPN Silicon High-Frequency Transistor Designed primarily for use in high–gain, low–noise small–signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching

Contextual Info: MCC
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# MMBR901 Description • • • • • NPN Silicon High-Frequency Transistor High Current-Gain – Bandwidth Products Low Noise Figure @ f=1.0GHz – NF matched =1.9dB (Typ)

MMBR901

Contextual Info: MCC Micro Commercial Corp. 21201 Itasca St. Chatsworth, CA 91311 Phone: 818 701-4933 Fax: (818) 701-4939 MMBR901 Description • • • • • NPN Silicon High-Frequency Transistor High Current-Gain – Bandwidth Products Low Noise Figure @ f=1.0GHz – NF(matched)=1.9dB (Typ)

11608A

Abstract: MMBR901LT1 Microlab FXR 7A SF marking 8b sot-23 RF NPN POWER TRANSISTOR C 10-12 GHZ SF-11N RF NPN POWER TRANSISTOR 2.5 GHZ RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ sf 118 d
Contextual Info: MOTOROLA Order this document by MMBR901LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon MMBR901LT1, T3 High-Frequency Transistor MRF9011LT1 Designed primarily for use in high–gain, low–noise small–signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching

mmbr901lt1

Abstract: 75 watt npn switching transistor MARKING 7A sot-23
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MMBR901LT1, T3 NPN Silicon H igh-Frequency Transistor Designed primarily for use in high-gain, low-noise small-signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching

MMBR901

Abstract: transistor 2248
Contextual Info: 1EE 0 § k 3 ti7 2 5 4 MOTOROLA SC □Dä7E7 3 T | X S TR S /R F MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBR901 The RF Line Dfe Source Same as MRF9Q1 NPN Silicon High Frequency Transistors , . . designee primarily for use in high-gain, iow-noise, small-signal UHF and

MMBR901

Contextual Info: Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 MMBR901 Description • • • • • NPN Silicon High-Frequency Transistor High Current-Gain – Bandwidth Products Low Noise Figure @ f=1.0GHz – NF matched =1.9dB (Typ)

Contextual Info: MMBR901LT1 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)25 I(C) Max. (A)30m Absolute Max. Power Diss. (W)300m Minimum Operating Temp (øC)-55þ Maximum Operating Temp (øC)150þ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition)15

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

TOKO rlc variable INDUCTANCE

Abstract: MPS901 J340 751E MC13156 MC13156DW MC13156FB MMBR5179 SFE10 HP8640B
Contextual Info: Order this document by MC13156/D MC13156 Wideband FM IF System The MC13156 is a wideband FM IF subsystem targeted at high performance data and analog applications. Excellent high frequency performance is achieved at low cost using Motorola’s MOSAIC 1.5 bipolar

MRF581

Abstract: 2SK163 BFG480W NB b6 smd transistor 2SK508 SMD transistor n36 bf998 TEF6860HL 3SK290 baw 92
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