MMBF4391LT1 Search Results

m6g transistors marking code

Abstract: m6g marking code m6g marking sot23 SMMBF4391LT1G marking 6j M6G sot 23 marking code m6g m6g sot23 marking m6g MMBF4393
Contextual Info: MMBF4391LT1G, MMBF4391LT1G, MMBF4392LT1G, MMBF4393LT1G JFET Switching Transistors http://onsemi.com N−Channel 3 Features 1 • S Prefix for Automotive and Other Applications Requiring Unique • 2 Site and Control Change Requirements; AEC−Q101 Qualified and

marking code m6g

Abstract: m6g transistors marking code M6G sot 23 m6g marking code M6G MARKING MMBF4391 MMBF4391LT1 MMBF4391LT1G MMBF4392 MMBF4392LT1
Contextual Info: MMBF4391LT1G, MMBF4392LT1G, MMBF4393LT1G JFET Switching Transistors N−Channel http://onsemi.com Features 2 SOURCE • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 3 GATE MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage

MMBF4391

Abstract: MMBF4391LT1 MMBF4392 MMBF4392LT1 MMBF4393 MMBF4393LT1
Contextual Info: MMBF4391LT1, MMBF4392LT1, MMBF4393LT1 JFET Switching Transistors N−Channel http://onsemi.com 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDS 30 Vdc Drain−Gate Voltage VDG 30 Vdc Gate−Source Voltage VGS 30 Vdc Forward Gate Current

Contextual Info: MMBF4391LT1 Transistors N-Channel JFET Military/High-RelN V BR DSS (V)30 V(BR)GSS (V)30 I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)225m Maximum Operating Temp (øC)150õ I(GSS) Max. (A)1.0n @V(GS) (V) (Test Condition)15 V(GS)off Min. (V)4.0 I(DSS) Max. (A)150m

MMBF4392

Abstract: MMBF4393 MMBF4391 MMBF4391LT1 MMBF4392LT1 MMBF4393LT1
Contextual Info: ON Semiconductort MMBF4391LT1 MMBF4392LT1 MMBF4393LT1 JFET Switching Transistors N–Channel 3 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain–Source Voltage VDS 30 Vdc Drain–Gate Voltage VDG 30 Vdc Gate–Source Voltage VGS 30 Vdc Forward Gate Current

Contextual Info: MMBF4391LT1G, MMBF4391LT1G, MMBF4392LT1G, MMBF4393LT1G JFET Switching Transistors http://onsemi.com N−Channel 3 Features 1 • S Prefix for Automotive and Other Applications Requiring Unique • 2 Site and Control Change Requirements; AEC−Q101 Qualified and

MMBF4393LT1G

Abstract: MMBF4391 MMBF4392 RK 69 MMBF4391LT1 MMBF4391LT1G MMBF4392LT1 MMBF4392LT1G MMBF4393LT1
Contextual Info: MMBF4391LT1G, MMBF4392LT1G, MMBF4393LT1G JFET Switching Transistors N−Channel http://onsemi.com Features 2 SOURCE • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 3 GATE MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage

MMBF4392

Abstract: MMBF4391 MMBF4391LT1 MMBF4392LT1 MMBF4393 MMBF4393LT1
Contextual Info: MOTOROLA Order this document by MMBF4391LT1/D SEMICONDUCTOR TECHNICAL DATA MMBF4391LT1 MMBF4392LT1 MMBF4393LT1 JFET Switching Transistors N–Channel 2 SOURCE 3 GATE 3 1 DRAIN MAXIMUM RATINGS 1 Rating Symbol Value Unit Drain–Source Voltage VDS 30 Vdc Drain–Gate Voltage

MMBF4392

Abstract: HM SOT23 marking 6K SOT23 mmbf4393 6K marking SOT23
Contextual Info: MMBF4391LT1 thru M AXIM UM RATINGS Rating D rain-Source Voltage Drain-Gate Voltage Symbol Value Unit V DS 30 Vdc VDG 30 Vdc Gate-Source Voltage VGS 30 Vdc Forward Gate C urrent 'G if 50 m Adc Symbol Max U n it Pd 225 mW 1.8 m W /’ C r 0JA 556 °C'W T j. Tstq

BC237

Abstract: motorola JFET 2N3819
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBF4391LT1 MMBF4392LT1 MMBF4393LT1 JFET Switching Transistors N–Channel 2 SOURCE 3 GATE 3 1 DRAIN MAXIMUM RATINGS 1 Rating Symbol Value Unit Drain–Source Voltage VDS 30 Vdc Drain–Gate Voltage VDG 30 Vdc Gate–Source Voltage

MMBF4393

Abstract: MMBF4391LT1
Contextual Info: ON Semiconductort MMBF4391LT1 MMBF4392LT1 MMBF4393LT1 JFET Switching Transistors N–Channel 3 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain–Source Voltage VDS 30 Vdc Drain–Gate Voltage VDG 30 Vdc Gate–Source Voltage VGS 30 Vdc Forward Gate Current

marking 6k sot-23 package

Abstract: MMBF4391 MMBF4391LT1 MMBF4391LT1G MMBF4392 MMBF4392LT1 MMBF4392LT1G MMBF4393LT1 MMBF4393LT1G SOT-23 6K
Contextual Info: MMBF4391LT1, MMBF4392LT1, MMBF4393LT1 JFET Switching Transistors N−Channel http://onsemi.com Features 2 SOURCE • Pb−Free Packages are Available 3 GATE MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDS 30 Vdc Drain−Gate Voltage VDG

MMBF4391

Abstract: MMBF4391LT1 MMBF4391LT1G MMBF4392 MMBF4392LT1 MMBF4393 MMBF4393LT1 MMBF4393LT1G
Contextual Info: MMBF4391LT1, MMBF4392LT1, MMBF4393LT1 JFET Switching Transistors N−Channel http://onsemi.com Features 2 SOURCE • Pb−Free Packages are Available 3 GATE MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDS 30 Vdc Drain−Gate Voltage VDG

marking 6k sot-23 package

Abstract: MARKING RK marking RK sot MMBF4392
Contextual Info: MMBF4391LT1, MMBF4392LT1, MMBF4393LT1 JFET Switching Transistors N−Channel http://onsemi.com Features 2 SOURCE • Pb−Free Packages are Available 3 GATE MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDS 30 Vdc Drain−Gate Voltage VDG

m6g marking code

Abstract: m6g transistors marking code m6g marking sot23
Contextual Info: MMBF4391LT1G, MMBF4391LT1G, MMBF4392LT1G, MMBF4393LT1G JFET Switching Transistors http://onsemi.com N−Channel Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique  SOT−23 CASE 318 STYLE 10

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

transistor mosfet buv18a

Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
Contextual Info: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9

BC337 BC547

Abstract: MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM
Contextual Info: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the

2N3906 Darlington transistor

Abstract: BC337 MPS5172 "cross-reference" low noise transistors bc638 transistor mpf102 LOW NOISE BC638 SOT-346 431 BC237 BC307 BC212
Contextual Info: CHAPTER 1 Selector Guide http://onsemi.com 5 Small–Signal Bipolar Transistors, JFETs, and Diodes In Brief . . . Page Bipolar Transistors General–Purpose Transistors . . . . . . . . . . . . . . . . . 8 General–Purpose Multiple Transistors . . . . . . . . 11

MSC2404

Abstract: MPF3821 BC237 MPS8093 BCY72 MMBF4856 MAD130P MPS3866 bcy71 ALTERNATIVE BSS72
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP RF Amplifier Transistor Surface Mount MSA1022-CT1 Motorola Preferred Device COLLECTOR 3 3 2 1 2 BASE 1 EMITTER MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage VCBO – 30 Vdc Collector–Emitter Voltage

BF245

Abstract: BC237 MSC2404 mps8093 bf244 MSA1022 MSC2295-BT1 msc2295 MAD1107P MPS6568
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN RF Amplifier Transistors Surface Mount COLLECTOR 3 MSC2295-BT1 MSC2295-CT1 Motorola Preferred Devices 3 2 BASE 1 EMITTER 2 1 MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage V(BR)CBO 30

mps2112

Abstract: UC3842 smps design with TL431 MPS2111 dc motor speed control tl494 TRANSISTOR MPS2112 ic equivalent book ncp1203 mosfet triggering circuit USING TL494 smps with uc3842 and tl431 SG3526 tip122 tip127 mosfet audio amp
Contextual Info: SG388/D Rev. 4, May-2002 Master Components Selector Guide Master Components Selector Guide ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular

MBF4391LT1

Abstract: MBF4393LT1 BF439 BF4391LT1 BF4392 MMBF4393LT1 4391l 4391LT1 BF4391 BF4393
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M M BF4391LT1 M M BF4392LT1 M M BF4393LT1 J F E T S w it c h in g T r a n s is t o r s N-Channel 2 SOURCE 1 DRAIN MAXIMUM RATINGS Rating D rain-Source Voltage Symbol Value Unit Vdc Vdc V DS 30 Drain-Gate Voltage V DG 30

stencil

Abstract: BC237 automatic heat detector project report BC393 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Schottky Barrier Diode BAT54T1 These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and