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    T6661 Search Results

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    Vishay Intertechnologies WSLP0603R0500FEA

    Current Sense Resistors - SMD 0.4Watt 0.05Ohm 1%
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    TTI WSLP0603R0500FEA Reel 5,000
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    • 10000 $0.41
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    onsemi MMFT6661T1G

    Trans MOSFET N-CH Si 90V 0.5A 4-Pin(3+Tab) SOT-223 T/R
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    Bristol Electronics MMFT6661T1G 4,000
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    onsemi MMFT6661LT1G

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics MMFT6661LT1G 965 1
    • 1 $2.25
    • 10 $1.69
    • 100 $1.40
    • 1000 $0.84
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    Motorola Semiconductor Products MMFT6661T1

    Trans MOSFET N-CH Si 90V 0.5A 4-Pin(3+Tab) SOT-223 T/R
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    Bristol Electronics MMFT6661T1 736
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    Alpha & Omega Semiconductor AOT66616L

    Transistor: N-MOSFET; unipolar; 60V; 95A; 50W; TO220
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME AOT66616L 13 1
    • 1 $1.60
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    T6661 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BC337 BC547

    Abstract: MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM
    Contextual Info: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the


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    mdc5000t1mdc3105lt1bc337 bc547msb81t1+8mbt3904dw9t1marking 6aa sodmvam115automatic stabilizer circuit diagram range 210 to 250 voltszt751mbt3904dw9transistor 2n4125ct bc547 transistor pin diagram PDF

    t6661

    Contextual Info: Order this data sheet by T6661T1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect TVansistor N-Channel Enhancem ent-Mode Silicon G ate TMOS SOT-223 for Surface Mount This TMOS medium power field effect transistor is designed for high speed, low loss power switching applications such as


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    mmft6661t1/dot-223mk145bp2phx33453f-1+1t6661 PDF

    BC517 spice model

    Abstract: bc547 spice model bc548 spice model h1 m6c MPS6595 bc557 Spice Model BF245 A spice spice model bf199 BC640 SPICE model transistor motorola Selector Guide Plastic-Encapsulated Transistors GreenLineTM Portfolio Devices S
    Contextual Info: Selector Guide 1 Plastic-Encapsulated Transistors 2 GreenLine Portfolio Devices 3 Small-Signal Field-Effect Transistors and MOSFETs 4 Small-Signal Tuning and Switching Diodes 5 Tape and Reel Specifications and Packaging Specifications 6 Surface Mount Information


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    vn2410lbc517 spice modelbc547 spice modelbc548 spice model+7h1 m6cmps6595bc557 spice modelbf245 a spicespice model bf199bc640 spice modeltransistor motorola selector guide plastic-encapsulated transistors greenlinetm portfolio devices s PDF

    t6661

    Abstract: MMFT6661T1 MMFT6661T3 SMD310
    Contextual Info: MOTOROLA Order this document by T6661T1/D SEMICONDUCTOR TECHNICAL DATA T6661T1 Medium Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS SOT–223 for Surface Mount This TMOS medium power field effect transistor is designed for


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    mmft6661t1/dmmft6661t1t6661mmft6661t3+1smd310 PDF

    MMFT6661T1

    Abstract: 72v6 BC237 2N3819 fet BC309B DL 3 Y SOT-223 msc2295 ucl 82
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA T6661T1 Medium Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS SOT–223 for Surface Mount This TMOS medium power field effect transistor is designed for high speed, low loss power switching applications such as


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    tap218amsc1621t1msc2404msd1819a+14mv1620mv1624mv1636mv1640mv1642mv1644mmft6661t172v6bc2372n3819 fetbc309bdl 3 y sot-223msc2295ucl 82 PDF

    t6661

    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Medium Pow er Field Effect Transistor T6661T1 Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS SOT-223 for Surface Mount This TMOS medium power field effect transistor is designed for high speed, low loss power sw itching a pplications such as


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    ot-223t6661 PDF

    T6661

    Abstract: ft960 t2406 MOTOROLA T2406 ft107 ft107 sot-223 MARKING I5 MMFT6661T1
    Contextual Info: SOT-223 DEVICES continued Small-Signal TMOS FETs The following is a listing of small-signal surface mount T M O S FETs which exhibit low Ros(on) characteristics. Pinout: 1-Gate, 2-Drain, 3-Source, 4-Drain Device Switching Time VGS(th) R oS (on) Marking Ohm


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    ot-223mmft960t1mmft6661t1mmft2406t1+8mmft107t1ft960t6661t2406ft107t2406 motorolaft107 sot-223marking i5 PDF

    BC547 sot package sot-23

    Abstract: BC337 BC547 2N2484 motorola MSB81T1 zt751 pin configuration NPN transistor BC547 sot-23 MMBF4856 SOT-223 P1f P1F motorola 2N2222A plastic package
    Contextual Info: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the


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    mdc5000t1mdc5001t1mdc3105lt1bc547 sot package sot-23+9bc337 bc5472n2484 motorolamsb81t1zt751pin configuration npn transistor bc547 sot-23mmbf4856sot-223 p1fp1f motorola2n2222a plastic package PDF

    T6661

    Abstract: MMFT6661T1 MMFT6661 MARKING WAW B8 SOT223 T6661 SOT-223
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MMH6661T1/D DATA — — Medium Power Field Effect Transistor T6661TI MotorolaPreferred Devise N-Channel Enhancement-Mode Silicon Gate TMOS SOT-223 for Surface Mount This TMOS medium power field effect transistor is designed for


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    mmh6661t1/dmmft6661tiot-223602-2ww9+7mmm6661t1/dt6661mmft6661t1mmft6661marking wawb8 sot223t6661 sot-223 PDF

    t6661

    Abstract: FT6661T1
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M M T6661T1 Medium Pow er Field E ffect Transistor Motorola Preferred D«vice N-Channel Enhancement-Mode Silicon Gate TMOS SOT-223 for Surface Mount This TMOS medium power field effect transistor is designed for high speed, low loss power sw itching ap plication s such as


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    ot-223ft6661t1t6661 PDF

    T6661

    Abstract: MMFT6661T1 MMFT6661
    Contextual Info: T6661T1* MAXIMUM RATINGS Tç = 25°C Unless O therw ise Noted Rating Drain-to-Source Voltage Symbol Value Unit VDSS 90 Volts Volts Drain-to-G ate Voltage Vd g 90 Gate-to-Source Voltage — C ontinuous V GS -3 0 Volts Id 1.0 2.rt A m ps Pd 0.8 6.4 W atts


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    t6661mmft6661t1318e-04ot-223+2o-261aammft6661 PDF

    t6661

    Abstract: ft960 marking 6Z SOT23 702 sot23 sot 23 70.2 sot-23 mosfet Marking SA s 6z sot223 marking marking 6Z 25 marking 6z sot
    Contextual Info: SMALL-SIGNAL TMOS MOSFETs continued CASE 318-07 (TO-236AB) SOT-23 STYLE 22 CASE 318E-04 (TO-261AA) SOT-223 STYLE 6 Table 18 — Surface Mount TMOS MOSFETs The follow ing is a listing of sm all-sig na l surface m ount T M O S MO SFETs. Case 318-07 — TO-236AB (SOT-23) — N-Channel


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    o-236abot-23318e-04o-261aa+14ot-223mmbf170lt1bss123lt12n7002lt1t6661ft960marking 6z sot23702 sot23sot 23 70.2sot-23 mosfet marking sa s6z sot223 markingmarking 6z25 marking6z sot PDF

    MMBF4856

    Abstract: pin configuration NPN transistor BC547 sot-23 BC337/BC327 BC547 sot package sot-23 t6661 bipolar transistor bc107 MPS6595 zt751 FET Transistor Guide BS107 MOTOROLA
    Contextual Info: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the


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    226aa226aemmsd1000t1236ab+12mmbf0201nlt1mmbf0202plt1mmbf4856pin configuration npn transistor bc547 sot-23bc337/bc327bc547 sot package sot-23t6661bipolar transistor bc107mps6595zt751fet transistor guidebs107 motorola PDF