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t6661 Abstract: FT6661T1 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M M FT6661T1 Medium Pow er Field E ffect Transistor Motorola Preferred D«vice N-Channel Enhancement-Mode Silicon Gate TMOS SOT-223 for Surface Mount This TMOS medium power field effect transistor is designed for high speed, low loss power sw itching ap plication s such as	OCR Scan	ot-223 ft6661t1 t6661	PDF

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t6661

Abstract: FT6661T1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M M FT6661T1 Medium Pow er Field E ffect Transistor Motorola Preferred D«vice N-Channel Enhancement-Mode Silicon Gate TMOS SOT-223 for Surface Mount This TMOS medium power field effect transistor is designed for high speed, low loss power sw itching ap plication s such as

OCR Scan

ot-223 ft6661t1 t6661

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