MMBD452 Search Results

MMBD452LT1

Abstract: MMBD452LT1G
Contextual Info: MMBD452LT1 Preferred Device Dual Hot−Carrier Diodes Schottky Barrier Diodes These devices are designed primarily for high−efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an

Contextual Info: MMBD301/MMBD452 SURFACE MOUNT SCHOTTKY DIODE VOLTAGE 30 Volts POWER 200mWatts FEATURES 0.120 3.04 • Low Capacitance : 1.5pF(Max)at VR=15V • Very Low VF : 0.36V (Typ) at I F = 1mA 0.110(2.80) • Extremely Fast Switching Speed • Lead free in comply with EU RoHS 2011/65/EU directives.

BC237

Abstract: automatic heat detector project report
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Hot-Carrier Diodes MMBD452LT1 Schottky Barrier Diodes Motorola Preferred Devices These devices are designed primarily for high–efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital

MMBD452LT1

Contextual Info: MOTOROLA Order this document by MMBD452LT1/D SEMICONDUCTOR TECHNICAL DATA Dual Hot-Carrier Diodes MMBD452LT1 Schottky Barrier Diodes Motorola Preferred Devices These devices are designed primarily for high–efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital

MMBD452

Contextual Info: DATA SHEET MMBD452 SURFACE MOUNT SCHOTTKY DIODE VOLTAGE 30 Volts POWER SOT- 23 200 mWatts Unit: inch mm Low Capacitance: 1.5 pF (Max) at VR=15V • Very Low VF: 0.36V (Typ) at IF = 1mA • Extremely Fast Switching Speed • Isolated, Schottky Pairs in Small Surface Mount Package

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Hot-Carrier Diodes MMBD452LT1 Schottky Barrier Diodes M o to rola P referre d D e v ice s These devices are designed primarily for high—efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital

Contextual Info: MMBD452 Dual Hot Carrier Mixer Diodes SOT-23 Features — Very low capacitance. — Extremely low minority carrier lifetime. — Low reverse leakage. — Power dissipation Pd=225mW. Applications — Designed primarily for UHF and VHF detector Dimensions in inches and millimeters

Contextual Info: ON Semiconductort Dual Hot-Carrier Diodes MMBD452LT1 Schottky Barrier Diodes ON Semiconductor Preferred Devices These devices are designed primarily for high−efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an

MMBD452LT1G

Contextual Info: MMBD452LT1G Dual Hot-Carrier Diodes Schottky Barrier Diodes These devices are designed primarily for high−efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an

Contextual Info: MMBD301/MMBD452 SURFACE MOUNT SCHOTTKY DIODE VOLTAGE 30 Volts POWER 200mWatts FEATURES 0.120 3.04 • Low Capacitance : 1.5pF(Max)at VR=15V 0.110(2.80) • Very Low VF : 0.36V (Typ) at I F = 1mA • Extremely Fast Switching Speed • Lead free in comply with EU RoHS 2002/95/EC directives.

MMBD452LT1

Contextual Info: ON Semiconductort Dual Hot-Carrier Diodes MMBD452LT1 Schottky Barrier Diodes ON Semiconductor Preferred Devices These devices are designed primarily for high–efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an

Contextual Info: MMBD452LT1G Dual Hot-Carrier Diodes Schottky Barrier Diodes These devices are designed primarily for high−efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an

Contextual Info: ON Semiconductort Dual Hot-Carrier Diodes MMBD452LT1 Schottky Barrier Diodes ON Semiconductor Preferred Devices These devices are designed primarily for high–efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an

Contextual Info: MMBD301/MMBD452 SURFACE MOUNT SCHOTTKY DIODE VOLTAGE 30 Volts POWER 200mWatts FEATURES 0.120 3.04 • Low Capacitance : 1.5pF(Max)at VR=15V • Very Low VF : 0.36V (Typ) at I F = 1mA 0.110(2.80) • Extremely Fast Switching Speed • Lead free in comply with EU RoHS 2002/95/EC directives.

MARKING CODE br 13 SOT23

Contextual Info: MMBD301/MMBD452 SURFACE MOUNT SCHOTTKY DIODE VOLTAGE 30 Volts POWER 200mWatts FEATURES • Low Capacitance : 1.5pF Max at VR=15V • Very Low VF : 0.36V (Typ) at IF = 1mA • Extremely Fast Switching Speed • In compliance with EU RoHS 2002/95/EC directives

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

rsn 3305

Abstract: transmission lines Twisted Pair spice model MC10EP16 100EP 0.001 MF CAPACITOR AND8020
Contextual Info: AND8020/D Termination of ECL Logic Devices Prepared by: Paul Shockman ON Semiconductor Logic Applications Engineering http://onsemi.com APPLICATION NOTE CONTENTS OF APPLICATION NOTE Introduction – DC Termination Analysis Section 3. Thevenin Equivalent/Parallel Termination

2N3906 Darlington transistor

Abstract: BC337 MPS5172 "cross-reference" low noise transistors bc638 transistor mpf102 LOW NOISE BC638 SOT-346 431 BC237 BC307 BC212
Contextual Info: CHAPTER 1 Selector Guide http://onsemi.com 5 Small–Signal Bipolar Transistors, JFETs, and Diodes In Brief . . . Page Bipolar Transistors General–Purpose Transistors . . . . . . . . . . . . . . . . . 8 General–Purpose Multiple Transistors . . . . . . . . 11

smd code book

Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
Contextual Info: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ

mps2112

Abstract: UC3842 smps design with TL431 MPS2111 dc motor speed control tl494 TRANSISTOR MPS2112 ic equivalent book ncp1203 mosfet triggering circuit USING TL494 smps with uc3842 and tl431 SG3526 tip122 tip127 mosfet audio amp
Contextual Info: SG388/D Rev. 4, May-2002 Master Components Selector Guide Master Components Selector Guide ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular

transistor marking code 12W SOT-23

Abstract: MGB20N40CL laptop charging crb kp series stepper motor japan servo co 2n3773 power Amplifier circuit diagrams MJ2955 TRANSISTOR pwm brush dc motor controller sg3526 SG3526 boost controller for PWM fan tl494 tip122 tip127 mosfet audio amp
Contextual Info: SG388/D Rev. 1, Aug-1999 ON Semiconductor PUBLICATION ORDERING INFORMATION USA/EUROPE Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5193, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada

CS5170

Abstract: mps2112 MPS2112ZL1 100A 300V IGBT MC3346P CS4124YDW16 ON Semiconductor PRICE BOOK 12V to 220V smps inverter bd234 igbt ac motor speed control
Contextual Info: SGD501/D REV 8, January 5, 2002 NORTH AMERICA SALES AND DISTRIBUTION ON Semiconductor PRICE BOOK THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section EFFECTIVE DATE: JANUARY 5, 2002 General Information Elimination Of Ozone Depleting Chemicals . . . .

TRANSISTOR AH-16

Abstract: TRANSISTOR bH-16 equivalent of transistor bc212 bc 214 transistor marking code SOT-23 2FX 2907A PNP bipolar transistors SILICON TRANSISTOR FS 2025 marking JV SOD323 bf245 replacement GI 312 diode msd601
Contextual Info: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further

transmission lines Twisted Pair spice model

Abstract: MMBD701 Twisted Pair split termination 100EP MBD301 MBD701 MC10EP16 MMBD301 diode z01
Contextual Info: AND8020/D Termination of ECL Devices with EF Emitter Follower OUTPUT Structure Prepared by: Paul Shockman ON Semiconductor Logic Applications Engineering http://onsemi.com APPLICATION NOTE CONTENTS OF APPLICATION NOTE Introduction − DC Termination Analysis