MJE702 Search Results

mje802

Abstract: transistor mje802 MJE703G MJE702 mje800 to225
Contextual Info: MJE700, MJE702, MJE703 PNP - MJE800, MJE802, MJE803 (NPN) Plastic Darlington Complementary Silicon Power Transistors http://onsemi.com These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2000 (Typ) @ IC

100 amp npn darlington power transistors

Abstract: complementary npn-pnp 500 watt power circuit diagram to225 10 amp npn darlington power transistors 16 amp npn darlington power transistors darlington complementary power amplifier SILICON COMPLEMENTARY transistors darlington Darlington transistors 703 H
Contextual Info: MJE700, MJE702, MJE703 PNP - MJE800, MJE802, MJE803 (NPN) Plastic Darlington Complementary Silicon Power Transistors http://onsemi.com These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2000 (Typ) @ IC

MJE703

Abstract: MJE800 MJE802 MJE803 MSD6100 1N5825 MJE700 MJE700G MJE702 NEW TRANSISTOR
Contextual Info: MJE700, MJE702, MJE703 PNP - MJE800, MJE802, MJE803 (NPN) Plastic Darlington Complementary Silicon Power Transistors http://onsemi.com These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2000 (Typ) @ IC

to225

Abstract: MJE802 MJE800 MJE702 MJE703 mje802g MJE803 MJE700 to-225 MJE700G
Contextual Info: MJE700, MJE702, MJE703 PNP - MJE800, MJE802, MJE803 (NPN) Plastic Darlington Complementary Silicon Power Transistors These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2000 (Typ) @ IC

transistor K 3596

Abstract: TIP-106 motorola power transistor to-126 2N6109 equivalent MJE3055 TO-126 BU326 BU108 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE700,T Plastic Darlington Complementary Silicon Power MJE702 Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 Typ @ IC = 2.0 Adc

Contextual Info: MJE700G, MJE702G, MJE703G PNP , MJE800G, MJE802G, MJE803G (NPN) Plastic Darlington Complementary Silicon Power Transistors http://onsemi.com These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2000 (Typ) @ IC

1N5825

Abstract: MJE700 MJE702 MJE703 MJE800 MJE802 MJE803 MSD6100 to225a
Contextual Info: ON Semiconductort PNP MJE700 Plastic Darlington Complementary Silicon Power Transistors MJE702 MJE703 NPN . . . designed for general–purpose amplifier and low–speed switching applications. MJE800 • High DC Current Gain — • • MJE802 hFE = 2000 Typ @ IC

MJE700G

Abstract: MJE700 1N5825 MJE702 MJE703 MJE800 MJE802 MJE803 MSD6100 TO-225
Contextual Info: MJE700, MJE702, MJE703 PNP − MJE800, MJE802, MJE803 (NPN) Plastic Darlington Complementary Silicon Power Transistors http://onsemi.com These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2000 (Typ) @ IC

NT 407 F TRANSISTOR TO 220

Abstract: NT 407 F TRANSISTOR npn transistor nt 407 f MJE700T 80 amp 30v npn darlington 10 amp npn darlington power transistors MJE701 MJE701T NPN/NT 407 F TRANSISTOR MJE703T
Contextual Info: ÆàMOSPEC PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . designed for general-purpose and low-speed switching application. MAXIMUM RATINGS Sym bol MJE700T MJE701T MJE800T MJE801T MJE702T MJE703T MJE802T MJE803T Unit Collector-Emitter Voltage

to225a

Abstract: MJE803 MOTOROLA MJE700T motorola 803 transistor MJE800T equivalent MJE700 MJE702 MJE703 MJE800 MJE800T
Contextual Info: MOTOROLA Order this document by MJE700/D SEMICONDUCTOR TECHNICAL DATA PNP MJE700,T Plastic Darlington Complementary Silicon Power MJE702 Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain —

MJE700

Abstract: MJE702 MJE703 MJE800 MJE802 MJE803 MSD6100 1N5825
Contextual Info: ON Semiconductor PNP MJE700 Plastic Darlington Complementary Silicon Power Transistors MJE702 MJE703 NPN . . . designed for general–purpose amplifier and low–speed switching applications. MJE800 • High DC Current Gain — • • MJE802 hFE = 2000 Typ) @ IC

transistor mje802

Contextual Info: ON Semiconductor PNP MJE700 Plastic Darlington Complementary Silicon Power Transistors MJE702 MJE703 NPN . . . designed for general−purpose amplifier and low−speed switching applications. MJE800 • High DC Current Gain — • • MJE802 hFE = 2000 Typ) @ IC

Contextual Info: MJE700, MJE702, MJE703 PNP - MJE800, MJE802, MJE803 (NPN) Plastic Darlington Complementary Silicon Power Transistors http://onsemi.com These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2000 (Typ) @ IC

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

702 A TRANSISTOR

Abstract: TRansistor 701 702 P TRANSISTOR
Contextual Info: MJE700/701/702/703 MJE700/701/702/703 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= -1.5 and -2.0A DC • Complement to MJE800/801/802/803 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Darlington Transistor

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

tip122 tip127 audio amp schematic

Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier
Contextual Info: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001  SCILLC, 2001 Previous Edition  1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.

702 TRANSISTOR

Abstract: ic 701 fairchild TRansistor 701 702 pnp 702 Fairchild ic 701 transistor 702 701 ic MJE700
Contextual Info: PNP EPITAXIAL MJE700/701/702/703 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 IC= -1.5 and -2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS TO-126 • Complement to MJE800/801/802/803 ABSOLUTE MAXIMUM RATINGS Characteristic

transistor mosfet buv18a

Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
Contextual Info: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

t1p117

Abstract: T1P110 T1P111 T1P112 MJE3310 t1p115 MJE3311 MJE3300 D41K2 2N6548
Contextual Info: 1989963 CENTRAL SEMICONDUCTOR ; CENTRAL tï SEMICONDUCTOR 6 i r noi 94 T-/n_?q D Ë J n f i tn t 3 DGaaim b T i T -.-5 3 - 3 / T \3 3 - £ 3 POWER DARLINGTON TRANSISTORS EPOXY le = O P E R A T I N G A N D S T O R A G E T E M P E R A T U R E - 6 5 ° t o +150°C

702 TRANSISTOR

Abstract: 702 pnp
Contextual Info: KSE700/701/702/703 KSE700/701/702/703 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= -1.5 and -2.0A DC • Complement to KSE800/801/802/803 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Darlington Transistor