MJ 1505 Search Results

NGB8207B

Contextual Info: NGB8207N, NGB8207BN Ignition IGBT 20 A, 365 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses

8207NG

Abstract: AYWW marking code IC
Contextual Info: NGB8207N Product Preview Ignition IGBT 20 A, 365 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses

1505C

Abstract: 405C NGB8207N NGB8207NT4G 8207NG
Contextual Info: NGB8207N Ignition IGBT 20 A, 365 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and

Contextual Info: NGB8207N, NGB8207BN Ignition IGBT 20 A, 365 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

G15N60

Abstract: G15N60S1G NGTG15N60 NGTB15N60S1
Contextual Info: NGTG15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss. The

NGTB15N60S1EG

Abstract: 15N60S1G
Contextual Info: NGTB15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss. The

MOSFET 300A 400v

Abstract: RHR15060 HA 3089 RHR15040 RHR15050 RHRU15040 RHRU15050 RHRU15060 SINGLE LEAD TO-218 ru15060
Contextual Info: HA RR IS S E N I C O N D S E CT OR b3E D £11 HARRIS U l s E M ' o o . D u c ’ • 4302273, OOMfllS'i tl .2 * H A S R H R U 15040 R H R U 15050, R H R U 15060 0 R PRELIMINARY 150A, 400V - 600V Hyperfast Diode August 1993 Features • Package SINGLE LEAD TO-218 STYLE

CD 1517

Abstract: USSR DIODE IRFI634G
Contextual Info: PD-9.738 International S Rectifier IRFI634G HEXFET Power MOSFET • • • • • Isolated Package High Voltage lsolation= 2.5KVRMS ® Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating Low Thermal Resistance V dss = 250V ^DS on = 0 -4 5 & lD = 5.6A

1xys

Abstract: 90a944
Contextual Info: Ultra-Low VCE sat IGBT IXGN 60N60 VCES ^C25 VCE(sat) Symbol Test Conditions V CES TJ = 25°C to 150°C 600 V v CGR Tj = 25°C to 150°C; RGE = 1 MU 600 V V GES Continuous ±20 V v GEM Transient +30 V ^C25 Tc = 25°C 100 A ^C90 Tc = 90°C 60 A •cm Tc 200

1RF620

Abstract: 1RF620S 317H IRF620 RF620 SMD-220 smd diode marking 9 ba ISD25 ScansUX1015
Contextual Info: PD-9.317H International IiorIRectifier IRF620 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Vdss=200V R DS{on - 0 - 8 0 ^ lD = 5.2A Description DATA SHEETS

1RF640

Abstract: 1RF640S 3V IC LINEAR SMD irf640a RD540 ov5s IRF640 1D11A IRF640 smd IRF640 applications note
Contextual Info: PD-9.374G International â ü Rectifier IRF640 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements VDSS= 200V R DS on = 0 . 1 8 0 lD = 18A Description DATA

smd diode 1336

Abstract: DIODE 1334 smd 1RL530 smd diode 1334 562C AN-994 IRL530 IRL530S SMD-220 Diode Marking 016
Contextual Info: PD-9.562C International J& R \ Rectifier IRL530- HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS on) Specified at Vgs=4V & 5V 175°C Operating Temperature Fast Switching Ease of Paralleling

1RL520

Abstract: 25CC 561C AN-994 IRL520 IRL520S SMD-220 smd diode marking U10
Contextual Info: International Rectifier PD-9.561C IRL520 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS on Specified at V gs=4V & 5V 175°C Operating Temperature Fast Switching Ease of Paralleling VDSS= 100V R DS(on) = 0.27Q

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5210s

Abstract: MOSFET smd marking kl 1ER2 AN-994 IRL510 IRL510S SMD-220 arej
Contextual Info: International ü ë ]Rectifier PD-9.560C IRL510 HEXFET Power M O SFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS on Specified at V gs=4V & 5V 175°C Operating Temperature Fast Switching Ease of Paralleling

1RFZ48

Abstract: RFZ48 RG-910 AN-994 IRFZ48 IRFZ48S SMD-220 d72a
Contextual Info: PD-9.758 International k ?r Rectifier IRFZ48 HEXFET Power M O SFET Dynamic dv/dt Rating Repetitive Avalanche Rated Ultra-Low On-Resistance Very Low Thermal Resistance 175°C Operating Temperature Fast Switching Ease of Paralleling ^ D SS- 60V ^DS on = 0 .0 1 8 Q

1RFZ48

Abstract: RFZ48 smd JSs diode RFZ4
Contextual Info: PD-9.758 International k ?r Rectifier IRFZ48 HEXFET Power M O SFET Dynamic dv/dt Rating Repetitive Avalanche Rated Ultra-Low On-Resistance Very Low Thermal Resistance 175°C Operating Temperature Fast Switching Ease of Paralleling ^ D SS- 60V ^DS on = 0 .0 1 8 Q

mj 1504 transistor

Abstract: transistor mj 1504 transistors mj 1504 of mj 1504 transistor
Contextual Info: Philips Semiconductors Preliminary specification PowerMOS transistors PHP6NA60E Low capacitance Avalanche energy FEATURES • • • • • • SYMBOL QUICK REFERENCE DATA Repetitive Avalanche Rated Fast switching

A6165

Abstract: fr1s 15C6 CAB-54C JD 1806 6605 11C6 CAB32 cab-47 mn 9105
Contextual Info: Lrttte Rebete are one of Ohmite's more economical lines o i low wattage resistors. Constructed of a pure carton film deposited on a higi\-flrade c eram c body, these unit* orter better stability perfor­ m ance than comparable carbon composition resistors.

1rf1010

Abstract: J35A IRF1010S IRF1010 irf1010 MOSFET 1RF10
Contextual Info: PD-9.814 International K R e ctifie r IR F 1 Ö 10 HEXFET® Power MOSFET • • • • • • • Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Repetitive Avalanche Rated 175°C Operating Temperature Fast Switching Ease of Paralleling

diode B14A

Abstract: B14A diode 1RFP450 diode b14A surface B14A B14A marking 1D24 IRFP450
Contextual Info: International Rectifier PD-9.458C IRFP450 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements VDSS= 500V ^DS on = 0 -4 0 Í2

315J

Abstract: IRF720 ScansUX1018
Contextual Info: PD-9.315J International i“r Rectifier IRF720 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V Ds s = 400V ^DS on — 1 - 8 0 lD = 3.3A Description DATA

irf630

Abstract: RD161
Contextual Info: PD-9.3091 International S Rectifier IRF630 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements VDSS = 200V ^DS on = 0 -4 0 Í2 l D = 9 .0 A Description DATA