AREJ Search Results

Contextual Info: 212 54F/74F212 Connection Diagrams 144-Bit Random Access Memory With 3-State Outputs S L9 DascrTp scnpt The ’F; eed 144-bit Random Access Memory RAM organized by 9-bit array. Address inputs are buffered to minimize loadT areJAiU>t.decoded on chip. The output buffers are

Contextual Info: TMS28F040 4 194 304-BIT FLASH ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY SMJS040-DECEMBER 1992 N PACKAGET Organization . . . 512K x 8 Separately Erasable 32K Byte Blocks Two Power Supplies 5 V and 12 V 100% TTL-Level Control Inputs Fully Automated On-Chip Erase and Byte

tvs 6ae

Abstract: SMA6F20A marking 6ap 6bg 92 M 600-AG 6BG TVS GENERAL SEMICONDUCTOR diodes marking code me
Contextual Info: V ishay I n tertech n o l o g y, I n c . Diodes – Industry’s Lowest Profile SlimSMA Package I INNOVAT AND TEC O L OGY SMA6F5.0A thru SMA6F20A N HN DIODES O 19 62-2012 Surface-Mount TRANSZORB Transient Voltage Suppressors FEATURES • Very low profile – 0.95 mm

stk 442 -130

Abstract: xc68hc711 XC68HC711D3 M68HC711D3 C45A M68HC11EVM MC68HC11 MC68HC711D3 ic stk 441 EEPR
Contextual Info: MC68HC711D3/D Rev. 1 MC68HC711D3 TECHNICAL DATA MOTOROLA MC68HC711D3 HCMOS MICROCONTROLLER UNIT Motorola reserves the right to make changes without further notice to any products herein to improve reliability, function or design. Motorola does not assume any liability arising out

Contextual Info: EL7104C/EL7114C Features G eneral D escription • Industry standard driver replacement • Improved response times • Matched rise and fall times • Reduced clock skew • Low output impedance • Low input capacitance • High noise immunity • Improved clocking rate

cj cl a17

Contextual Info: TMS29LF004T, TMS29LF004B 524288 BY 8-BIT FLASH MEMORIES Single Power Supply Supports 2.7-V and 3.6-V Read/Write Operation Organization: 524288 x 8 Bits Array Blocking Architecture • • • • - • • • • • • • • • One 16K-Byte Protected-Boot Sector

2T931A

Abstract: KT853 2T926A KT838A 2T803A 2T809A 2T904A 2T808A 2T603 2T921A
Contextual Info: g V ì^ fg : W SflÉptÉ! W ^ i$ î0 i0 û * W I I m ^7ù£-à.S& m p ,-À-& s i: r& mSÊmÈÈ •ï ' ^ f§ W % a s Ü lg S I W M 7 \ w Jkw s i 4; h# » ik « W 'ï illl ¡ P * te ili -X\ S I Iw 11 4-S U E S T am Ir ¿ « 1 1 1 » , ü i a Î3 & & C nPA BO H H M K

HARRIS 82C54

Abstract: CS82C54-10 P82C54
Contextual Info: HARRIS SEMICOND SECTOR MbE D • M302E71 DD3flb'fll 3 « H A S R O C ' R A H A R R I S S E M I C O N D U C T O R i / i f a T - 3 Z .- 3 3 - 0 5 February CM OS Programmable Interval Timer 1992 Features Description • 10MHz or 8MHz Clock Input Frequency The Harris 82C54 is a high performance C M O S Programma­

Contextual Info: 52E D H = 7 *7fn • 7=^237 S C S -1 H O M S O N L' Iiu r a m « D037Sbb OTT ■ SGTH s fi ^ hohson M 27C512 CMOS 512K 64K x 8 UV EPROM and OTP ROM ■ VERY FAST ACCESS TIME: 80ns ■ COMPATIBLE WITH HIGH SPEED MICRO­ PROCESSORS, ZERO WAIT STATE ■ LOW POWER “CMOS” CONSUMPTION:

AH276Z4-G1

Abstract: AH276 AH276Z4-AE1 AH276Z4-BE1 AH276Z4-CE1
Contextual Info: Product Brief VOLTAGE DETECTOR COMPLEMENTARY OUTPUT HALL EFFECT LATCH Description AZ70XX AH276 Parametric Table The AH276 is an integrated sensor withdetectors output driver AZ70XX series ICs areHall under voltage with Supply Output Voltage Saturation Max

FZJ 101

Abstract: 772t presto II Thomson capacitors lcc M27C405 M27V405 PLCC32 TSOP32 D772
Contextual Info: r = 7 *7 # S G S -T H O M S O N « O S m iS T G M D I ê i M 2 7 V 4 0 5 LOW VOLTAGE 4 Megabit 512K x 8 OTP EPROM PRELIMINARY DATA • PIN COMPATIBLE with the 4 MEGABIT, SINGLE VOLTAGE FLASH MEMORY ■ LOW VOLTAGE READ OPERATION: 3V to 5.5V ■ FAST ACCESS TIME: 120ns

Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . DIODES SMA6F5.0A thru SMA6F20A Surface-Mount TRANSZORB Transient Voltage Suppressors FEATURES • Very low profile – 0.95 mm • SMA footprint compatible • Peak pulse power –– 600 W at 10/1000 µs

800w power amplifier circuit diagram

Abstract: ANI 1015 ISO calibration certificate formats lead side brazed hermetic ADC674A
Contextual Info: COMPONENTS B U R R -B R O W N * [ ADC674A/883B SERIES 1 ADC674ASD/883B ADC674ATD/883B REVISION NONE FEBRUARY, 1989 Microprocessor-Compatible ANALOG-TO-DIGITAL CONVERTER FEATURES • COMPLETE 12-BIT A/D CONVERTER WITH REFERENCE, CLOCK, AND 8-, 12-, OR 16BIT MICROPROCESSOR BUS INTERFACE

256KX4

Abstract: V53C104B V53C104 casco battery
Contextual Info: JVH VITEUC V53C104B HIGH PERFORMANCE, LO W POW ER 256K X 4 B IT FA S T PAGE MODE CMOS DYNAMIC RAM PRELIMINARY 60/60L 70/70L 80/80L Max. RAS Access Time, tp ^ 60 ns 70 ns 80 ns Max. Column Address Access Time, (tCAA) 30 ns 35 ns 40 ns Min. Fast Page Mode Cyde Time, (tp^)

AO4614B

Abstract: AO4614BL
Contextual Info: AO4614B Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4614B/L uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.

DS1232* watch dog timer

Abstract: capacitor trip device
Contextual Info: r r u LTC1232 TECHNOLOGY v m Microprocessor Supervisory Circuit F€ATUR€S D € S C M P T IO n • Guaranteed Reset Assertion at Vcc = 1V ■ 8-Pin SOIC Plastic Package ■ 2.0mA Maximum Supply Current ■ 4.62V/4.37V Precision Voltage Monitor ■ Power OK/Reset Time Delay: 600ms

nmc27c512aq

Abstract: SD112b
Contextual Info: NATL SENICOND {MEMORY} IDE D | b S O H S b OOblSbT fl | p r e l im in a r y NMC27C512AN 524,288-Bit 64k x 8 One Time Programmable CMOS PROM General Description Features The NMC27C512AN is a high-speed 512K UV one time pro­ grammable CMOS EPROM, ideally suited for applications

Contextual Info: M ic r o c h ip P I C 1 6 C 5 4 A EPROM-Based 8-Bit CMOS Microcontroller FEATURES FIGURE A - PIN CONFIGURATIONS Compatibility PDIP, SOIC, CERDIP Window • Pin and software compatible with PIC16C54 device High-Performance RISC-like CPU • Only 33 single word instructions to learn

6A20n

Abstract: MOST25
Contextual Info: I 6A20n m o jx DIODE OBIUHE CBEÆEHHH GENERAL /JeMncJiepHbiH ahoa 6^2011 npeflHa3HaneH ajih paÔOTbl B ÔJIOKaX CTpOHHOH pa3BepTKH TejieBH3HOHHbIX npHeMHHKOb c ymoM otkjiohchhsi jiyna KHHecxona AO 110°C. K aToa — oKCHüHkiH icocBeHHoro HaKajia. M acca He 6ojiee 25 r.

TST02

Abstract: AES17-1991 93rd AES171991 CS5396 CS5397
Contextual Info: PRODUCT PREVIEW A Cirrus Logic Company _ 120 dB, 96 kH z A udio A /D C onverter Features General Description • 24-Bit Resolution • Complete CMOS Stereo A/D System Delta-Slgma A/D Converters Digital Anti-Alias Filtering S/H Circuitry and Voltage Reference

FZJ 101

Contextual Info: C r C . T U n M C n iü o lio m U IY IO U r a LF155 - LF255 LF156 - LF256 - LF355 - LF356 LF157 - LF357 - LF257 WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS . HIGH INPUT IMPEDANCE J-FET INPUT STAGE . HIGH SPEED J-FET OP-AMPs : UP to 20MHz, 50V/ns • OFFSET VOLTAGE ADJUST DOES NOT

Contextual Info: KM75C02A CMOS FIFO First-in First-out FIFOj 1024 x 9 CMOS Memory FEATURES DESCRIPTION • First-in, First-out dual port memory — 1024 x 9 organization • Very high speed independent of depth/width — 25ns cycle times • Asynchronous and simultaneous read and write

Contextual Info: ¡R samsung * 0 Semiconductor KM75C102A CMOS FIFO WITH PROGRAMMABLE FLAG Preliminary FEATURES DESCRIPTION • Flrst-lrvFlrst-Out Dual Port Memory — 1Kx9 The 75C102A is a 1K x 9 dual port memory that imple­ ments a special First-In-First-Out FIFO algorithm that

jd 1803 IC

Abstract: cctkc OB 3309 RP soviet cathode ray siek 1 6H23 DSAGER00034 ROD PENTODE S3 TRIO 64
Contextual Info: * HO* mm * HAi m y / K A T A JIO F CATALOGUE blnlk » Macxb 3 -iIO P r — OHHH H 3 K p y n H e illU H X B M H p e n p O M M L U JieH H O C T H . H3ZieJTHK 3 /ieK T p O H H O H 143HejTHH CO BeTCKO H 3 Jie K T p O H IfK H , 0 6 j i a j i a K > m H e BblCOKOH H a-