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    MITSUBISHI RF POWER SELECTION Search Results

    MITSUBISHI RF POWER SELECTION Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    LXMSJZNCMH-225
    		Murata Manufacturing Co Ltd Ultra small RAIN RFID chip tag PDF
    LXMS21NCMH-230
    		Murata Manufacturing Co Ltd Ultra small RAIN RFID chip tag PDF
    LBAA0QB1SJ-295
    		Murata Manufacturing Co Ltd SX1262 MODULE WITH OPEN MCU PDF
    GRM-KIT-OVER100-DE-D
    		Murata Manufacturing Co Ltd 0805-1210 over100uF Cap Kit PDF
    LBUA5QJ2AB-828
    		Murata Manufacturing Co Ltd QORVO UWB MODULE PDF

    MITSUBISHI RF POWER SELECTION Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    shinetsu G746 rohs

    Abstract: shinetsu G746 G746 sirf iii chip MITSUBISHI APPLICATION NOTE RF POWER
    Contextual Info: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-GEN-006-D th Date : 30 May 2001 Rev. date : 26th Dec. 2006 Prepared : K. Kajiwara T.Okawa Confirmed : T. Okawa SUBJECT: PRECAUTIONS AND RECOMMENDATIONS FOR MITSUBISHI RF POWER DEVICES GENERAL:


    Original     		AN-GEN-006-D shinetsu G746 rohs shinetsu G746 G746 sirf iii chip MITSUBISHI APPLICATION NOTE RF POWER PDF

    mitsubishi rf power selection

    Contextual Info: MITSUBISHI RF POWER DEVICE PRECAUTIONS AND RECOMMENDATIONS GENERAL Mitsubishi RF Power Devices designed for mobile and radio, 9.6V, 7.2V for portable radio. For base bias lead or lead portable radio applications have high reliability and good which performance, as they are designed and manufactured under


    OCR Scan     		PDF

    grm708

    Abstract: transistor 5024 GRM39 RD05MMP1 Diode GP 622 diode GP 829 Diode GP 641 diode gp 537
    Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD05MMP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W a OUTLINE DRAWING RD05MMP1 is a MOS FET type transistor specifically designed for UHF RF power


    Original     		RD05MMP1 941MHz, RD05MMP1 941MHz 941MHz) grm708 transistor 5024 GRM39 Diode GP 622 diode GP 829 Diode GP 641 diode gp 537 PDF

    TRANSISTOR D 1765 320

    Abstract: RF high POWER TRANSISTOR TRANSISTOR D 1765 marking 929 922 RD09MUP2 mitsubishi top side marking 1776 ER48 transistor mosfet 4425
    Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD09MUP2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W a DESCRIPTION (b) (b) RD09MUP2 is a MOS FET type transistor specifically designed for UHF RF power


    Original     		RD09MUP2 520MHz, RD09MUP2 520MHz 520MHz) TRANSISTOR D 1765 320 RF high POWER TRANSISTOR TRANSISTOR D 1765 marking 929 922 mitsubishi top side marking 1776 ER48 transistor mosfet 4425 PDF

    RD20HMF1

    Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD20HMF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,900MHz,20W DESCRIPTION OUTLINE RD20HMF1 is a MOS FET type transistor specifically designed for 900MHz-band RF power amplifiers


    Original     		RD20HMF1 900MHz RD20HMF1 900MHz-band 900MHz RD20HMFor PDF

    RD02MUS1

    Abstract: RD02MUS1-101 T112 3M Touch Systems
    Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD02MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.


    Original     		RD02MUS1 175MHz 520MHz RD02MUS1 RD02MUS1-101 T112 3M Touch Systems PDF

    RD30HVF1

    Abstract: 100OHM RD30HVF1-101 rd30hvf A 1469 mosfet
    Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.


    Original     		RD30HVF1 175MHz RD30HVF1 175MHz RD30HVF1-101 100OHM RD30HVF1-101 rd30hvf A 1469 mosfet PDF

    RD16HHF1 application notes

    Abstract: RD16HHF RD16HHF1-101 RD16HHF1 RD 15 hf mitsubishi 10Turns RD16hh Rf power transistor mosfet POWER MOSFET APPLICATION NOTE
    Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD16HHF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W DESCRIPTION OUTLINE RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications.


    Original     		RD16HHF1 30MHz RD16HHF1 30MHz RD16HHF1-1or RD16HHF1 application notes RD16HHF RD16HHF1-101 RD 15 hf mitsubishi 10Turns RD16hh Rf power transistor mosfet POWER MOSFET APPLICATION NOTE PDF

    LAL04NA

    Abstract: T113 RD00HHS1 mosfet HF amplifier RD00HHS1-101 3M Touch Systems
    Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD00HHS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W OUTLINE DRAWING RD00HHS1 is a MOS FET type transistor specifically designed for HF RF amplifiers applications.


    Original     		RD00HHS1 30MHz RD00HHS1 30MHz LAL04NA T113 mosfet HF amplifier RD00HHS1-101 3M Touch Systems PDF

    147J

    Abstract: 100OHM RD30HUF1
    Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HUF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,520MHz,30W OUTLINE DESCRIPTION DRAWING 22.0+/-0.3 RD30HUF1 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications.


    Original     		RD30HUF1 520MHz RD30HUF1 520MHz RD30HUF1-101 147J 100OHM PDF

    RD01MUS1-101

    Abstract: RD01MUS1 fet 547 2779, transistor RD01MSU1
    Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD01MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.


    Original     		RD01MUS1 520MHz RD01MUS1 520MHz RD01MUS1-101 fet 547 2779, transistor RD01MSU1 PDF

    RD12MVP1

    Abstract: top marking mitsubishi rd series
    Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD12MVP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W a 7.0+/-0.2 0.2+/-0.05 0.65+/-0.2 RD12MVP1 is a MOS FET type transistor specifically designed for VHF RF power


    Original     		RD12MVP1 175MHz, RD12MVP1 175MHz 175MHz) top marking mitsubishi rd series PDF

    RD00HVS1

    Abstract: RF Transistor s-parameter vhf T113 RD00HVS1-101
    Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD00HVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W OUTLINE DRAWING DESCRIPTION RD00HVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.


    Original     		RD00HVS1 175MHz RD00HVS1 175MHz RF Transistor s-parameter vhf T113 RD00HVS1-101 PDF

    RD01MUS2

    Abstract: RD01MUS2-101 GP 839 DIODE FAN 3792 MOS FET 1127 GP 809 DIODE IDQ100 01LOT 0703 transistor 3M Touch Systems
    Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD01MUS2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING 0.8 MIN 2.5+/-0.1 RD01MUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.


    Original     		RD01MUS2 520MHz RD01MUS2 520MHz RD01MUS2-101 GP 839 DIODE FAN 3792 MOS FET 1127 GP 809 DIODE IDQ100 01LOT 0703 transistor 3M Touch Systems PDF

    RD70HHF

    Abstract: RD70HHF1-101 RD70HHF1 10Turns mosfet HF amplifier TRANSISTOR D 1765 738
    Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD70HHF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 30MHz,70W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD70HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications.


    Original     		RD70HHF1 30MHz RD70HHF1 30MHz RD70HHF1-101 RD70HHF RD70HHF1-101 10Turns mosfet HF amplifier TRANSISTOR D 1765 738 PDF

    100OHM

    Abstract: RD45HMF1
    Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD45HMF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 900MHz,45W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD45HMF1 is a MOS FET type transistor specifically designed for 900MHz-band High power amplifiers


    Original     		RD45HMF1 900MHz RD45HMF1 900MHz-band 900MHz 800-900MHz RD45HMF1-101 100OHM PDF

    RD60HUF

    Abstract: mitsubishi rf 100OHM RD60HUF1 RD60HUF1-101
    Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD60HUF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 520MHz,60W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD60HUF1 is a MOS FET type transistor specifically designed for UHF High power amplifiers applications.


    Original     		RD60HUF1 520MHz RD60HUF1 520MHz RD60HUF1-101 RD60HUF mitsubishi rf 100OHM RD60HUF1-101 PDF

    rd15hvf

    Abstract: RD15HVF1 RD15HVF1-101 RD15HV rd15h 100OHM Zo-50o transistor d1 391 rd15hvf11 zg j9
    Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD15HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W OUTLINE 3.2+/-0.4 2 9+/-0.4 High power and High Gain: Pout>15W, Gp>14dB @Vdd=12.5V,f=175MHz


    Original     		RD15HVF1 175MHz520MHz 175MHz 520MHz RD15HVF1 rd15hvf RD15HVF1-101 RD15HV rd15h 100OHM Zo-50o transistor d1 391 rd15hvf11 zg j9 PDF

    RD06HHF1

    Abstract: RD06HHF1-101 RD06HHF 10TURNS 40gp0
    Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD06HHF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,6W OUTLINE DESCRIPTION APPLICATION 3.2+/-0.4 12.3MIN 2 9+/-0.4 High power gain: Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHz


    Original     		RD06HHF1 30MHz 30MHz RD06HHF1 RD06HHF1-or RD06HHF1-101 RD06HHF 10TURNS 40gp0 PDF

    RD06HVF1

    Abstract: Mitsubishi transistor rf final 100OHM RD06HVF1-101 transistor 6w FET P channel POWER MOSFET APPLICATION NOTE
    Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD06HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W OUTLINE DESCRIPTION APPLICATION 3.2+/-0.4 12.3MIN 2 9+/-0.4 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz


    Original     		RD06HVF1 175MHz 175MHz RD06HVF1 RD06HVFor Mitsubishi transistor rf final 100OHM RD06HVF1-101 transistor 6w FET P channel POWER MOSFET APPLICATION NOTE PDF

    RD07MVS1B

    Abstract: transistor t06 19 RD07MVS1B-101 RD07MVS1 T112
    Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD07MVS1B Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 2.0+/-0.05 2 For output stage of high power amplifiers in


    Original     		RD07MVS1B 175MHz 520MHz RD07MVS1B-101, RD07MVS1B transistor t06 19 RD07MVS1B-101 RD07MVS1 T112 PDF

    RD 15 hf mitsubishi

    Abstract: RD100HHF1 RD100HHF1-101 MITSUBISHI RF POWER MOS FET rd 100 100w RD100HHF1 rd100hhf hf power transistor mosfet hf amplifier 100w Mitsubishi transistor rf final RD100HH
    Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD100HHF1 Silicon MOSFET Power Transistor 30MHz,100W OUTLINE DRAWING DESCRIPTION 25.0+/-0.3 RD100HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications.


    Original     		RD100HHF1 30MHz RD100HHF1 RD100HHF1-101 RD 15 hf mitsubishi RD100HHF1-101 MITSUBISHI RF POWER MOS FET rd 100 100w RD100HHF1 rd100hhf hf power transistor mosfet hf amplifier 100w Mitsubishi transistor rf final RD100HH PDF

    diode gp 434

    Abstract: RD07MVS2 diode zener 7.2v RD07MVS1 T112 318 MARKING DIODE
    Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD07MVS2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION OUTLINE DRAWING 0.22 2.0+/-0.05 1.0+/-0.05 2 3.5+/-0.05 1 3 (0.25) INDEX MARK (Gate)


    Original     		RD07MVS2 175MHz 520MHz 520MHz 175MHz) 520MHz) diode gp 434 RD07MVS2 diode zener 7.2v RD07MVS1 T112 318 MARKING DIODE PDF

    RD02MUS1B

    Abstract: RD02MUS1 T112 mosfet 4501 3M Touch Systems
    Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD02MUS1B RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 6.0+/-0.15 1.0+/-0.05 2.0+/-0.05 1 4.9+/-0.15


    Original     		RD02MUS1B 175MHz 520MHz RD02MUS1B RD02MUS1 T112 mosfet 4501 3M Touch Systems PDF