MG30J Search Results

mg30j6es50

Contextual Info: T O SH IB A MG30J6ES50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG30J6ES50 Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • • 14-FAST-ON-TAB #110 The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package.

Contextual Info: TO SH IBA MG30J6ES50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG30J6ES50 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. Enhancement-Mode. High Speed : tf=0.36,us Max. (Ic = 30A)

Contextual Info: TOSHIBA MG30J6ES50 TOSHIBA GTR M O D U LE SILICON N C HANN EL IGBT M G 3 G J6 E S 5 G HIGH POWER SW ITCHING APPLICATIONS M O TO R CONTROL APPLICATIONS The Electrodes are Isolated from Case. High Input Impedance. 6 lOBTs Built Into 1 Package, Enhancement- Mode.

Contextual Info: T O SH IB A MG30J6ES50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG30J6ES50 Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • • 14-FAST-ON-TAB #110 The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package.

Contextual Info: MG30J6ES50 TOSHIBA GTR Module Silicon N Channel IGBT MG30J6ES50 High Power Switching Applications Motor Control Applications Unit: mm The electrodes are isolated from case. High input impedance. 6 IGBTs built into 1 package. Enhancement-mode. High speed : tf = 0.36µs Max. (IC = 30A)

Toshiba transistor Ic 100A

Abstract: exo 30a MG30J6ES50
Contextual Info: TOSHIBA MG30J6ES50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG30J6ES50 Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • • 14-FAST-ON-TAB #110 The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package.

MG30J6ES50

Abstract: mg30j
Contextual Info: MG30J6ES50 TOSHIBA GTR Module Silicon N Channel IGBT MG30J6ES50 High Power Switching Applications Motor Control Applications • The electrodes are isolated from case. • High input impedance. • 6 IGBTs built into 1 package. • Enhancement-mode. • High speed: tf = 0.36µs Max. (IC = 30A)

Contextual Info: MG30J6ES50 TOSHIBA GTR Module Silicon N Channel IGBT MG30J6ES50 High Power Switching Applications Motor Control Applications Unit: mm l The electrodes are isolated from case. l High input impedance. l 6 IGBTs built into 1 package. l Enhancement-mode. l High speed : tf = 0.36µs Max. (IC = 30A)

G50Q2YS40

Abstract: MG8Q6ES42 GT8Q102 mg300q1us41 GT60M301 MIG50J904H gt15j103 MIG30J103H MG25Q6ES50A mg150q1js
Contextual Info: TOSHIBA [1 ] Product List [ 1 ] Product List Product No. GT10G101 GT10J301 GT10J311 GT10Q301 GT10Q 311 GT15G101 GT15J101 GT15J102 GT15J103 SM GT15Q101 GT15Q301 GT15Q 311 GT20D101 GT20D201 GT20G101 GT20G101 (SM) GT20G102 GT20G102 (SM) GT20J301 GT20J311 GT25G101

MG200J2YS21

Abstract: MG30J6ES1 MG100J2YS91 MG400J1US11 MG75J2YS40 MG400Q1US11 MG100J6ES40 MG150J2YS40 mig25Q901 MG75J2YS45
Contextual Info: l IL A p p ro v iti I evi vs Key to devices not listed in Recognized Components Directory, 1993 Edition 'Approved since 2/12/93, may need early authorization letter for customers. Toshiba Part # Section # UL FILE # E 8 7 9 8 9 MG100J1BS11 MG100J2YS1 MG100J2YS9

MG150N2YS40

Abstract: MG100J2YS45 mg75j2ys40 MG150J2YS40 MG15N6ES42 MG100G2YS1 mg75n2ys40 mg25n2ys40 MG200J2YS40 MG50J6ES40
Contextual Info: Connection Maximum Bating VCES V ICÌAÌ 8 15 25 G T15J101* eoo G T8J101* G T8J102(SM )* G T15J102* GT15J103(SMJ* 50 75 G T60J101* <60A) G T 80J101* GT50J1Û2+ (80A) M G 50 J1B S 1 1 MG75J1SB11 100 150 200 300 400 500 G T50J101* Q T25J101* MG25J1BS11 MG100J1BS11 MG150J1BS11

2SA1930 2sc5171

Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
Contextual Info: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228

Sine wave PWM DC to AC Inverter ics

Abstract: ULN2803 PIN CONFIGURATION TA8316S tc9653an HIGH VOLTAGE DIODE for microwave ovens ta7606p induction heating ta8316s TLP250 low side pwm driver relay driver ic ULN2803 2SK3201
Contextual Info: Peripheral ICs Peripheral ICs for Home Appliances Toshiba offers a complete lineup of peripheral ICs for home appliances in various application fields as shown in the table below. Timer ICs Device TA7326P TA7326F TA7327P TB1004AF TB1010F TB1012F TB1022F Package

MG75J2YS40

Abstract: MG200J2YS45 MG50J6ES40 MG150J2YS40 MG200J2YS40 MG100j2YS40 20L6P44 MG150J2YS45 MG100J6ES40 10L6P44
Contextual Info: UL Approved Devices Key to devices not listed in Recognized Components Directory, 1993 Edition ‘ Approved since 2/12/93, may need early authorization letter for customers. Toshiba Part # Secti UL FILE #E87989 MG100J1BS11 MG100J2YS1 MG100J2YS9 MG100J2YS40