MAX24 Search Results

STY112

Abstract: 112N65 STY112N65M5
Contextual Info: STY112N65M5 N-channel 650 V, 0.019 Ω, 96 A, MDmesh V Power MOSFET in Max247 package Datasheet — production data Features Order code VDSS @TjMAX RDS on max ID STY112N65M5 710 V < 0.022 Ω 96 A • Higher VDSS rating ■ Higher dv/dt capability ■ Excellent switching performance

139N65M5

Abstract: STY139N65M5
Contextual Info: STY139N65M5 N-channel 650 V, 0.014 Ω, 130 A, MDmesh V Power MOSFET in Max247 package Datasheet — production data Features Order code VDSS @TjMAX RDS on max ID STY139N65M5 710 V < 0.017 Ω 130 A • Max247 worldwide best RDS(on) ■ Higher VDSS rating

STY140NS10

Abstract: Max247TM MAX247
Contextual Info: STY140NS10 N-CHANNEL 100V - 0.009 Ω - 140A MAX247 MESH OVERLAY™ POWER MOSFET TYPE STY140NS10 • ■ ■ VDSS RDS on ID 100V <0.011Ω 140A TYPICAL RDS(on) = 0.009Ω STANDARD THRESHOLD DRIVE 100% AVALANCHE TESTED DESCRIPTION Using the latest high voltage MESH OVERLAY™

JR060

Abstract: MAX2430 0805CS-470XMBC 293D105X0016A2T MAX2430EVKIT-SO MAX2430ISE TAJA105K016 voltronics
Contextual Info: MAX2430 Evaluation Kit _Ordering Information PART MAX2430EVKIT-SO TEMP. RANGE 0°C to +70°C BOARD TYPE Surface Mount _Features ♦ Low-Cost, Silicon RF Power Amplifier ♦ Delivers More than 125mW Output Power from

STY140NS10

Contextual Info: STY140NS10 N-CHANNEL 100V - 0.009 Ω - 140A MAX247 MESH OVERLAY™ POWER MOSFET TYPE STY140NS10 • ■ ■ VDSS RDS on ID 100V <0.011Ω 140A TYPICAL RDS(on) = 0.009Ω STANDARD THRESHOLD DRIVE 100% AVALANCHE TESTED ) s ( ct u d o DESCRIPTION Using the latest high voltage MESH OVERLAY™

Contextual Info: STGY50NC60WD N-channel 600V - 65A - Max247 Ultra fast switching PowerMESH IGBT Features Type VCES STGY50NC60WD 600V IC VCE sat (max)@25°C @100°C < 2.5V 65A • Very high frequency operation ■ Low CRES / CIES ratio (no cross-conduction susceptibility)

Contextual Info: STY139N65M5 N-channel 650 V, 0.014 Ω typ., 130 A, MDmesh V Power MOSFET in Max247 package Datasheet — production data Features Order code VDS @TjMAX RDS on max ID STY139N65M5 710 V 0.017 Ω 130 A • Max247 worldwide best RDS(on) ■ Higher VDSS rating

Contextual Info: STGY80H65DFB, STGW80H65DFB, STGWT80H65DFB Trench gate field-stop IGBT, HB series 650 V, 80 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C • High speed switching series 1 Max247 2 • Minimized tail current

MAX2620

Abstract: MAX2420 MAX2424 MAX2426 MAX2440EAI MAX2441EAI MAX2442EAI Radios varactor alpha
Contextual Info: 19-1352; Rev 1; 11/98 KIT ATION EVALU LE B A IL A AV 900MHz Image-Reject Receivers Features The MAX2440/MAX2441/MAX2442 highly integrated front-end receiver ICs provide the lowest cost solution for cordless phones and ISM-band radios operating in the 900MHz band. All devices incorporate receive imagereject mixers to reduce filter cost. They operate with a

mosfet 4430

Abstract: 4430 MOSFET 600v 60a STY60NM60
Contextual Info: STY60NM60 N-CHANNEL 600V - 0.050Ω - 60A Max247 Zener-Protected MDmesh Power MOSFET TARGET DATA TYPE STY60NM60 • ■ ■ ■ ■ ■ ■ VDSS RDS on ID 600V < 0.06Ω 60 A TYPICAL RDS(on) = 0.050Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED

"RF Power Amplifier"

Abstract: MAX2430 MAX2430EVKIT-SO MAX2430IEE MAX2430ISE nicd 3.6v battery
Contextual Info: 19-1093; Rev 2; 1/98 UAL MAN ET KIT E N H O S I T A LUA DAT EVA LOWS L O F Low-Voltage, Silicon RF Power Amplifier/Predriver _Features The MAX2430 is a versatile, silicon RF power amplifier that operates directly from a 3V to 5.5V supply, making

5962-9456504mva

Abstract: MX7502SQ 428M MX753747 IH5048
Contextual Info: SCOPE: +5V-POWERED MULTI-CHANNEL RS-232 DRIVERS/RECEIVERS Device Type 01 02 03 04 05 Generic Number MAX220 x /883B MAX222(x)/883B MAX232A(x)/883B MAX242(x)/883B MAX243(x)/883B Pkg Code J16 & L20 J18 & L20 J16 & L20 J18 & L20 J16 & L20 Case Outline(s). The case outlines shall be designated in Mil-Std-1835 and as follows:

MAX2406

Abstract: MAX2410 MAX2410EEI MAX2411A 400MHZ transceiver microwave transceiver 3ghz
Contextual Info: 19-1320; Rev 1; 3/98 NUAL KIT MA ATION EET H S A EVALU T WS DA O L L O F Low-Cost RF Up/Downconverter with LNA and PA Driver _Features The MAX2410 performs the RF front-end transmit/receive function in time-division-duplex TDD communication

MAX2430

Abstract: 3 pin trimmer capacitors 0805CS-470XMBC 293D105X0016A2T JR060 MAX2430EVKIT-SO MAX2430ISE TAJA105K016
Contextual Info: 19-1093; Rev 1; 12/97 MAX2430 Evaluation Kits _Features ♦ Low-Cost, Silicon RF Power Amplifier ♦ Delivers More than 125mW Output Power from +3.6V Supply ♦ Single +3V to +5.5V Supply Range, Ideal for 3-Cell NiCd or 1-Cell Lithium-Ion Battery Operation

MAX24003

Abstract: analog device 24003
Contextual Info: MAX24003 2.5Gbps Tx Burst-Mode Laser Transceiver General Description The MAX24003 is a complete burst-mode laser driver transmitter and limiting amplifier receiver used within fiber optic modules for FTTx applications. A fully compliant GEPON module with digital diagnostics is

100nF

Abstract: STY112N65M5
Contextual Info: STY112N65M5 N-channel 650 V, 0.019 Ω, 96 A, MDmesh V Power MOSFET Max247 Features Order code VDSS @TjMAX RDS on max ID STY112N65M5 710 V < 0.022 Ω 96 A • Max247 worldwide best RDS(on) ■ Higher VDSS rating ■ Higher dv/dt capability ■ Excellent switching performance

transistor 1127

Abstract: MAX2611
Contextual Info: / n y ix i/ n _ Wireless/RF Products Wireless/RF Products, Product MAX2430 MAX2450 MAX2451 MAX2452 MAX2601

Contextual Info: ADVANCE INFORMATION All information in this data sheet is preliminary • _ _ _ _ . _ _ 900M H z Im ag e-R eject Transceivers _General Description The MAX2420/MAX2421/MAX2422/MAX2460/MAX2463 are highly integrated front-end ICs that provide the low­

rtl8363

Abstract: rb60 bridge rectifier
Contextual Info: Data Sheet May 2012 MAX24288 EV KIT Evaluates: MAX24288 General Description The MAX24288 EV Kit is an easy-to-use evaluation kit for the MAX24288 IEEE 1588 Packet Timestamper and Clock. On the network side of the MAX24288 an SFP module cage supports either a 1000BASE-X optical

MAX2406

Abstract: MAX2410 MAX2410EEI MAX2411A LO722
Contextual Info: ADVANCE INFORMATION All information in this data sheet is preliminary and subject to change. Low-Cost RF Up/Downconverter with Low-Noise Amplifier and Power-Amplifier Driver 8/97 The MAX2410 is designed for use over a wide range of frequencies and is optimized for TDD systems operating at 1.9GHz. Applications include PWT1900/

Contextual Info: J V W Y X A J V K 3Vr U ltra-Low -Pow er Q uadrature M odulator Pulling the CMOS-compatible ENABLE pin low reduces the supply current to 2pA. To minimize spurious feed­ back, the MAX2452's internal oscillator is set at twice the IF via external tuning components. The oscillator

O247

Abstract: O-247 STY60NA20 STY60NA
Contextual Info: STY60NA20  N - CHANNEL 200V - 0.030Ω - 60 A - Max247 FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STY60NA20 V DSS R DS on ID 200 V < 0.032 Ω 60 A TYPICAL RDS(on) = 0.030 Ω EFFICIENT AND RELIABLE MOUNTING THROUGH CLIP ± 30V GATE TO SOURCE VOLTAGE RATING

STY34NB50

Contextual Info: STY34NB50 N - CHANNEL 500V - 0.11Ω - 34 A - Max247 PowerMESH MOSFET TYPE STY34NB50 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.13 Ω 34 A TYPICAL RDS(on) = 0.11 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED

GY40NC60VD

Abstract: GY40NC60V IC 2030 schematic diagram 2030 ic circuit diagram GY40N STGY40NC60VD gy40NC60
Contextual Info: STGY40NC60VD N-CHANNEL 50A - 600V - Max247 Very Fast PowerMESH IGBT Figure 1: Package Table 1: General Features TYPE VCES VCE sat (Max) @25°C IC @100°C STGY40NC60VD 600 V < 2.5 V 50 A • ■ ■ ■ ■ ■ HIGH CURRENT CAPABILITY HIGH FREQUENCY OPERATION UP TO 50