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    STGWT80H65DFB Search Results

    STGWT80H65DFB Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    STGWT80H65DFB
    STMicroelectronics IGBTs - Single, Discrete Semiconductor Products, IGBT 650V 120A 469W TO3P-3L Original PDF 19
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    STGWT80H65DFB Price and Stock

    STMicroelectronics

    STMicroelectronics STGWT80H65DFB

    IGBT TRENCH FS 650V 120A TO-3P
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    STMicroelectronics STGWT80H65DFB 126 1
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    STMicroelectronics STGWT80H65DFB (HB)

    Igbt, Single, 650V, 120A, To-3P; Continuous Collector Current:120A; Collector Emitter Saturation Voltage:1.6V; Power Dissipation:469W; Collector Emitter Voltage Max:650V; No. Of Pins:3Pins; Operating Temperature Max:175°C Rohs Compliant: Yes |Stmicroelectronics STGWT80H65DFB
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    Newark STGWT80H65DFB (HB) Bulk 4 1
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    STGWT80H65DFB Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: STGY80H65DFB, STGW80H65DFB, STGWT80H65DFB Trench gate field-stop IGBT, HB series 650 V, 80 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C • High speed switching series 1 Max247 2 • Minimized tail current


    Original
    STGY80H65DFB, STGW80H65DFB, STGWT80H65DFB Max247 O-247 DocID024366 PDF

    Contextual Info: STGW80H65DFB STGWT80H65DFB 650 V, 80 A high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 • Very low saturation voltage: VCE sat = 1.6 V


    Original
    STGW80H65DFB STGWT80H65DFB O-247 DocID024366 PDF

    gy-80

    Contextual Info: STGY80H65DFB, STGW80H65DFB, STGWT80H65DFB Trench gate field-stop IGBT, HB series 650 V, 80 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C • High speed switching series 1 Max247 2 • Minimized tail current


    Original
    STGY80H65DFB, STGW80H65DFB, STGWT80H65DFB Max247 O-247 DocID024366 gy-80 PDF

    GWT80H65DFB

    Abstract: stgwt80h65dfb STGW80H65DFB ST IGBT code marking stgwt80h65
    Contextual Info: STGW80H65DFB STGWT80H65DFB 650 V, 80 A high speed trench gate field-stop IGBT Datasheet - preliminary data Features • Maximum junction temperature: TJ = 175 °C  High speed switching series  Minimized tail current 2  Very low saturation voltage: VCE sat = 1.65 V


    Original
    STGW80H65DFB STGWT80H65DFB O-247 DocID024366 GWT80H65DFB stgwt80h65dfb ST IGBT code marking stgwt80h65 PDF

    Contextual Info: STGY80H65DFB, STGW80H65DFB, STGWT80H65DFB Trench gate field-stop IGBT, H series 650 V, 80 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C • High speed switching series 1 Max247 2 • Minimized tail current


    Original
    STGY80H65DFB, STGW80H65DFB, STGWT80H65DFB Max247 O-247 DocID024366 PDF