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STMicroelectronics


STMicroelectronics STGWT80H65DFB IGBT TRENCH FS 650V 120A TO-3P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	STGWT80H65DFB	Tube	240		1	1 $7.06 10 $7.06 100 $4.06 1000 $2.91 10000 $2.90	Buy Now
Avnet Americas ()	STGWT80H65DFB	Bulk			1	1 $5.29 10 $5.29 100 $5.29 1000 $5.29 10000 $5.29	Buy Now
	STGWT80H65DFB	Tube		15 Weeks	300	1 - 10 - 100 - 1000 $3.14 10000 $2.90	Buy Now
Mouser Electronics	STGWT80H65DFB		126			1 $7.06 10 $4.06 100 $2.92 1000 $2.90 10000 $2.90	Buy Now
STMicroelectronics	STGWT80H65DFB		126		1	1 $6.92 10 $3.98 100 $2.86 1000 $2.86 10000 $2.86	Buy Now
TME	STGWT80H65DFB				1	1 $8.34 10 $6.96 100 $6.64 1000 $5.76 10000 $4.96	Get Quote

Avnet Silica	STGWT80H65DFB		1,200	16 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Chip Stock	STGWT80H65DFB		3,198			1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	STGWT80H65DFB			16 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Buy Now
IBS Electronics	STGWT80H65DFB		6		4	1 - 10 $4.20 100 $4.05 1000 $3.99 10000 $3.88	Buy Now
STMicroelectronics STGWT80H65DFB (HB) Igbt, Single, 650V, 120A, To-3P; Continuous Collector Current:120A; Collector Emitter Saturation Voltage:1.6V; Power Dissipation:469W; Collector Emitter Voltage Max:650V; No. Of Pins:3Pins; Operating Temperature Max:175°C Rohs Compliant: Yes \|Stmicroelectronics STGWT80H65DFB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	STGWT80H65DFB (HB)	Bulk	4		1	1 $5.20 10 $5.20 100 $4.76 1000 $4.40 10000 $4.40	Buy Now

GWT80H65DFB Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: STGY80H65DFB, STGW80H65DFB, GWT80H65DFB Trench gate field-stop IGBT, HB series 650 V, 80 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C • High speed switching series 1 Max247 2 • Minimized tail current	Original	STGY80H65DFB, STGW80H65DFB, STGWT80H65DFB Max247 O-247 DocID024366	PDF
Contextual Info: STGW80H65DFB GWT80H65DFB 650 V, 80 A high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 • Very low saturation voltage: VCE sat = 1.6 V	Original	STGW80H65DFB STGWT80H65DFB O-247 DocID024366	PDF
gy-80 Contextual Info: STGY80H65DFB, STGW80H65DFB, GWT80H65DFB Trench gate field-stop IGBT, HB series 650 V, 80 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C • High speed switching series 1 Max247 2 • Minimized tail current	Original	STGY80H65DFB, STGW80H65DFB, STGWT80H65DFB Max247 O-247 DocID024366 gy-80	PDF
GWT80H65DFB Abstract: stgwt80h65dfb STGW80H65DFB ST IGBT code marking stgwt80h65 Contextual Info: STGW80H65DFB GWT80H65DFB 650 V, 80 A high speed trench gate field-stop IGBT Datasheet - preliminary data Features • Maximum junction temperature: TJ = 175 °C  High speed switching series  Minimized tail current 2  Very low saturation voltage: VCE sat = 1.65 V	Original	STGW80H65DFB STGWT80H65DFB O-247 DocID024366 GWT80H65DFB stgwt80h65dfb ST IGBT code marking stgwt80h65	PDF
Contextual Info: STGY80H65DFB, STGW80H65DFB, GWT80H65DFB Trench gate field-stop IGBT, H series 650 V, 80 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C • High speed switching series 1 Max247 2 • Minimized tail current	Original	STGY80H65DFB, STGW80H65DFB, STGWT80H65DFB Max247 O-247 DocID024366	PDF