GY40N Search Results

GY40N60D

Abstract: Y40N60D GY40N60 IC IGBT fast GY40N
Contextual Info: MOTOROLA O rder this docum ent by M G Y40N60D /D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M GY40N60D Insulated G ate Bipolar Transistor with A nti-P arallel Diode Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T O -2 6 4

GY40NC60VD

Abstract: GY40NC60V IC 2030 schematic diagram 2030 ic circuit diagram GY40N STGY40NC60VD gy40NC60
Contextual Info: GY40NC60VD N-CHANNEL 50A - 600V - Max247 Very Fast PowerMESH IGBT Figure 1: Package Table 1: General Features TYPE VCES VCE sat (Max) @25°C IC @100°C GY40NC60VD 600 V < 2.5 V 50 A • ■ ■ ■ ■ ■ HIGH CURRENT CAPABILITY HIGH FREQUENCY OPERATION UP TO 50

GY40NC60VD

Abstract: STGY40NC60VD Welding topologies MAX247 GY40N
Contextual Info: GY40NC60VD N-CHANNEL 50A - 600V Max247 Hyper Fast PowerMESH IGBT TYPE VCES VCE sat (Max)@25°C IC(#) @100°C GY40NC60VD 600 V < 2.5 V 50 A • ■ ■ ■ ■ ■ HIGH INPUT IMPEDANCE OFF LOSSES INCLUDE TAIL CURRENT LOW GATE CHARGE HIGH CURRENT CAPABILITY

GY40NC60VD

Abstract: gy40NC60 GY40N STGY40NC60VD IC 2030 schematic diagram ic MARKING QG
Contextual Info: GY40NC60VD N-CHANNEL 50A - 600V - Max247 Very Fast PowerMESH IGBT Figure 1: Package Table 1: General Features TYPE VCES VCE sat (Max) @25°C IC @100°C GY40NC60VD 600 V < 2.5 V 50 A • ■ ■ ■ ■ ■ ■ HIGH CURRENT CAPABILITY HIGH FREQUENCY OPERATION UP TO

GY40NC60VD

Abstract: 2030 ic circuit diagram IC 2030 schematic diagram
Contextual Info: GY40NC60VD N-CHANNEL 50A - 600V Max247 Hyper Fast PowerMESH IGBT PRELIMINARY DATA TYPE VCES VCE sat (Max)@25°C IC(#) @100°C GY40NC60VD 600 V < 2.5 V 50 A • ■ ■ ■ ■ ■ ■ OFF LOSSES INCLUDE TAIL CURRENT LOW GATE CHARGE HIGH CURRENT CAPABILITY

GY40N

Abstract: gy40NC60 GY40NC60VD GY40NC60V 600V 20A 50KHz STGY40NC60VD JESD97 IC 2030 schematic diagram
Contextual Info: GY40NC60VD N-channel 600V - 50A - Max247 Very fast PowerMESH IGBT Features Type VCES GY40NC60VD 600V IC VCE sat (max)@25°C @100°C < 2.5V 50A • High current capability ■ High frequency operation up to 50kHz ■ Low CRES / CIES ratio (no cross-conduction

Contextual Info: GY40NC60VD N-CHANNEL 50A - 600V Max247 Hyper Fast PowerMESH IGBT TYPE VCES VCE sat (Max)@25°C IC @100°C GY40NC60VD 600 V < 2.5 V 50 A • ■ ■ ■ ■ ■ HIGH INPUT IMPEDANCE OFF LOSSES INCLUDE TAIL CURRENT LOW GATE CHARGE HIGH CURRENT CAPABILITY

Contextual Info: GY40NC60VD N-CHANNEL 50A - 600V Max247 Hyper Fast PowerMESH IGBT PRELIMINARY DATA TYPE VCES VCE sat (Max)@25°C IC(#) @100°C GY40NC60VD 600 V < 2.5 V 50 A • ■ ■ ■ ■ ■ ■ OFF LOSSES INCLUDE TAIL CURRENT LOW GATE CHARGE HIGH CURRENT CAPABILITY

GY40N60

Abstract: motorola 6810 GY40N
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet GY40N60 Insulated Gate Bipolar Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate T h is In su la te d G a te B ip o la r T ra n sisto r IG B T u ses an a dva n ce d

Contextual Info: GY40NC60VD N-CHANNEL 50A - 600V Max247 Hyper Fast PowerMESH IGBT TYPE VCES VCE sat (Max)@25°C IC(#) @100°C GY40NC60VD 600 V < 2.5 V 50 A • ■ ■ ■ ■ ■ HIGH INPUT IMPEDANCE OFF LOSSES INCLUDE TAIL CURRENT LOW GATE CHARGE HIGH CURRENT CAPABILITY