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STGWT80H65DFB Datasheets (1)

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STMicroelectronics

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
STGWT80H65DFB		STMicroelectronics	IGBTs - Single, Discrete Semiconductor Products, IGBT 650V 120A 469W TO3P-3L	Original	PDF		19

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STMicroelectronics


STMicroelectronics STGWT80H65DFB Trans IGBT Chip N-CH 650V 120A 3-Pin TO-3P Tube - Bulk (Alt: 45AC7598)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas ()	STGWT80H65DFB	Bulk			1	1 $7.88 10 $5.15 100 $4.83 1000 $4.64 10000 $4.64	Get Quote
	STGWT80H65DFB	Tube		22 Weeks	300	1 - 10 - 100 - 1000 $3.15 10000 $2.98	Buy Now
Mouser Electronics	STGWT80H65DFB		308			1 $7.91 10 $4.15 100 $3.58 1000 $3.58 10000 $3.58	Buy Now
Newark	STGWT80H65DFB	Bulk	31		1	1 $7.88 10 $5.15 100 $4.83 1000 $4.64 10000 $4.64	Buy Now
STMicroelectronics	STGWT80H65DFB		308		1	1 $7.91 10 $4.15 100 $3.58 1000 $3.58 10000 $3.58	Buy Now
Future Electronics ()	STGWT80H65DFB	Tube	3	22 Weeks	3	1 - 10 $3.42 100 $3.38 1000 $3.29 10000 $3.20	Buy Now
	STGWT80H65DFB	Tube		22 Weeks	300	1 - 10 - 100 $3.38 1000 $3.26 10000 $3.20	Buy Now

TME	STGWT80H65DFB				1	1 $7.22 10 $5.04 100 $4.81 1000 $4.81 10000 $4.81	Get Quote
Avnet Silica	STGWT80H65DFB			23 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	STGWT80H65DFB			23 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vyrian	STGWT80H65DFB		7,190			1 - 10 - 100 - 1000 - 10000 -	Get Quote

STGWT80H65DFB Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: STGY80H65DFB, STGW80H65DFB, STGWT80H65DFB Trench gate field-stop IGBT, HB series 650 V, 80 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C • High speed switching series 1 Max247 2 • Minimized tail current	Original	stgy80h65dfb stgw80h65dfb stgwt80h65dfb max247 +2o-247 docid024366	PDF
Contextual Info: STGW80H65DFB STGWT80H65DFB 650 V, 80 A high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 • Very low saturation voltage: VCE sat = 1.6 V	Original	stgw80h65dfb stgwt80h65dfb o-247 docid024366	PDF
gy-80 Contextual Info: STGY80H65DFB, STGW80H65DFB, STGWT80H65DFB Trench gate field-stop IGBT, HB series 650 V, 80 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C • High speed switching series 1 Max247 2 • Minimized tail current	Original	stgy80h65dfb stgw80h65dfb stgwt80h65dfb max247 +3o-247 docid024366 gy-80	PDF
GWT80H65DFB Abstract: stgwt80h65dfb STGW80H65DFB ST IGBT code marking stgwt80h65 Contextual Info: STGW80H65DFB STGWT80H65DFB 650 V, 80 A high speed trench gate field-stop IGBT Datasheet - preliminary data Features • Maximum junction temperature: TJ = 175 °C  High speed switching series  Minimized tail current 2  Very low saturation voltage: VCE sat = 1.65 V	Original	stgw80h65dfb stgwt80h65dfb o-247 docid024366 +3gwt80h65dfb st igbt code marking stgwt80h65	PDF
Contextual Info: STGY80H65DFB, STGW80H65DFB, STGWT80H65DFB Trench gate field-stop IGBT, H series 650 V, 80 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C • High speed switching series 1 Max247 2 • Minimized tail current	Original	stgy80h65dfb stgw80h65dfb stgwt80h65dfb max247 +2o-247 docid024366	PDF