O247 Search Results

Contextual Info: TAS3103 Digital Audio Processor With 3D Effects Data Manual February 2004 Digital Audio Solutions SLES038C IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue

IRGPC40S

Contextual Info: PD - 9.692 IRGPC40S INSULATED GATE BIPOLAR TRANSISTOR Features Standard Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400Hz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 1.8V

eeprom 2408

Abstract: BUT24
Contextual Info: TAS3103 Digital Audio Processor With 3D Effects Data Manual October 2002 Digital Audio Solutions SLES038A IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue

BUT24

Contextual Info: TAS3103 Digital Audio Processor With 3D Effects Data Manual February 2004 Digital Audio Solutions SLES038C IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue

IRG4PC50S-P

Abstract: IRG4PC50S IRG4PC50
Contextual Info: PD - 91581B IRG4PC50S-P Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

COIL CLAMPING DIODE

Abstract: VB927 VB927FI High voltage ignition coil driver car ignition coil Driver car ignition circuit diagram ICL 2025
Contextual Info: VB927 VB927FI  HIGH VOLTAGE IGNITION COIL DRIVER POWER IC • ■ ■ ■ NO EXTERNAL COMPONENT REQUIRED INTEGRATED HIGH VOLTAGE CLAMP COIL CURRENT LIMIT INTERNALLY SET HIGH RUGGEDNESS DESCRIPTION The VB927 is a monolithic high voltage integrated circuit made using STM VIPower Technology,

f1010e

Abstract: IRFP054N SS2000 DIODE marking le st TO-247AC Package IRF1010N PE10
Contextual Info: PD - 9.1382A IRFP054N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.012Ω G ID = 81A† S Description Fifth Generation HEXFETs from International Rectifier

5d3 diode

Abstract: 6B15 7b12 MACH Programmer transistor 7B12 2D15 PAL 007 A power generator control circuit schematic 1C12 5D10
Contextual Info: MACH 5 CPLD Family I MAC ncludes H Adv anc 5A Fam e In form ily atio n Fifth Generation MACH Architecture FEATURES ◆ High logic densities and I/Os for increased logic integration ◆ ◆ ◆ ◆ ◆ ◆ ◆ — 128 to 512 macrocell densities — 68 to 256 I/Os

igbt 500V 15A

Abstract: IRGP430U
Contextual Info: PD - 9.780 IRGP430U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve VCES = 500V VCE(sat) ≤ 3.0V

N CHANNEL MOSFET 10A 1000V

Abstract: IRGPC20K
Contextual Info: PD - 9.1129 IRGPC20K INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated UltraFast IGBT C • Short circuit rated - 10µs @ 125°C, VGE = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz

IRFP064N

Abstract: IRFP064N equivalent f1010e irf3205 DRIVER otto IRF3205 equivalent irf3205 mosfet transistor IRF3205 IR 190h IRF3205
Contextual Info: PD - 9.1383A IRFP064N HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.008Ω G ID = 110A† S Description Fifth Generation HEXFETs from International Rectifier

IRGPC30S

Contextual Info: PD - 9.1146 IRGPC30S INSULATED GATE BIPOLAR TRANSISTOR Features Standard Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400Hz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 2.2V

diode R 360 BL

Abstract: IRFP048N TO-247AC Package IRFZ48N
Contextual Info: PD - 9.1409A IRFP048N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.016Ω G Description ID = 64A S Fifth Generation HEXFETs from International Rectifier

ic 4040

Abstract: 4040 cmos ci 4040 cmos 4040 stv 4325 O129-O135 PD16707 4040
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

Contextual Info: 1 MACH 5 FAMILY MACH 5 Family Fifth Generation MACH Architecture DISTINCTIVE CHARACTERISTICS ◆ ◆ ◆ ◆ ◆ ◆ ◆ Publication# 20446 Amendment/0 Rev: D Issue Date: August 1997 MACH 5 Family ◆ Fifth generation MACH architecture — 100% routable

IRF540N

Abstract: IRFP140N
Contextual Info: PD - 91343B IRFP140N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.052Ω G ID = 33A S Description Fifth Generation HEXFETs from International Rectifier

w9na60

Abstract: ATT218 H9NA60FI STW9NA60 9na60 STH9NA60FI TRANSISTOR FS 2025
Contextual Info: STW9NA60 STH9NA60FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE ST W9NA60 ST H9NA60FI • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 600 V 600 V < 0.8 Ω < 0.8 Ω 9.5 A 6.4 A TYPICAL RDS(on) = 0.69 Ω ± 30V GATE TO SOURCE VOLTAGE RATING

CY37512

Abstract: CY37512V
Contextual Info: Back PRELIMINARY CY37512V UltraLogic 3.3V 512-Macrocell ISR™ CPLD — tPD = 15 ns Features • 512 macrocells in 32 logic blocks • 3.3V In-System Reprogrammable™ ISR™ — JTAG-compliant on-board programming — Design changes don’t cause pinout changes

clcc land pattern

Abstract: CY37512VP208-66UMB CY37032VP44-100AI CY37064P44-154YMB CY37256P160-125UMB TO-220AB/clcc land pattern
Contextual Info: CYPRESS PRELIMINARY Ultra37000 CPLD Family 5V, 3.3V, ISR™ High-Performance CPLDs General Description Features • In-System Reprogram mable ISR™ CMOS CPLDs — JTAG interface for reconfigurability — Design changes don’t cause pinout changes — Design changes don’t cause timing changes

IRGPC30K

Contextual Info: PD - 9.1075 IRGPC30K INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated UltraFast IGBT C • Short circuit rated - 10µs @ 125°C, VGE = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz

IRGPC20U

Contextual Info: PD - 9.1031 IRGPC20U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 3.0V

schematic diagram UPS

Abstract: STY30NA50 DC/AC to DC smps circuit diagram schematic diagram welding device O247
Contextual Info: STY30NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STY30NA50 • ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.175 Ω 30 A TYPICAL RDS(on) = 0.15 Ω EFFICIENT AND RELIABLE MOUNTING THROUGH CLIP ± 30V GATE TO SOURCE VOLTAGE RATING

O247

Abstract: O-247 STY60NA20 STY60NA
Contextual Info: STY60NA20  N - CHANNEL 200V - 0.030Ω - 60 A - Max247 FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STY60NA20 V DSS R DS on ID 200 V < 0.032 Ω 60 A TYPICAL RDS(on) = 0.030 Ω EFFICIENT AND RELIABLE MOUNTING THROUGH CLIP ± 30V GATE TO SOURCE VOLTAGE RATING

gck451

Abstract: 2818C AT40K AT40K05AL AT40K10AL AT40K20AL AT40K40AL AT40KAL XC4000 XC5200
Contextual Info: Features • Ultra High Performance • • • • • • • • • • – System Speeds to 100 MHz – Array Multipliers > 50 MHz – 10 ns Flexible SRAM – Internal Tri-state Capability in Each Cell FreeRAM – Flexible, Single/Dual Port, Synchronous/Asynchronous 10 ns SRAM