1C12 Search Results

Contextual Info: TPD-1C12-013 InGaAs PIN photodiode chip FEATURES: • Optimized for monitor application. • Low dark current and low capacitance. ELECTRO-OPTICAL CHARACTERISTICS: PARAMETERS SYMBOL Responsivity Dark Current Breakdown Voltage Capacitance Fig. 1 R ID VBD C

1E13

Abstract: TPD-1C12-011
Contextual Info: TPD-1C12-011 InGaAs PIN photodiode chip FEATURES: • Optimized for fiber optic application. • Low dark current and low capacitance. ELECTRO-OPTICAL CHARACTERISTICS: PARAMETERS SYMBOL Responsivity Dark Current Breakdown Voltage Capacitance Bandwidth Fig. 1

13005 ET

Abstract: si08 124j capacitor
Contextual Info: THIRD ANGLE PROJECTION 1 C APACI TANCE jiF I ITEM CODE ECWU 1C124JC9 u 1C154JC9 h 1C184JC9 « 1C224JC9 // 1C274JC9 il 1C334JC9 // 1C394JC9 il 1C474JC9 (124) (154) (184) (224) (274) (334) (394) (474) 0 .12 0 .15 0.18 0.22 0 .2 7 0.33 0.39 0 .4 7 DIMEN W

Contextual Info: THIRD ANGLE PROJECTION ITEM CODE ECWU 1C124JC9 il 1C154JC9 li 1C184JC9 il 1C224JC9 li 1C274JC9 il 1C334JC9 Il 1C394JC9 Il 1C474JC9 D IM E N S IO N S CAPACITANCE |jF * L L i , Lz T Y P E W H 0 .1 2 (1 2 4 ) 4.810.2 3.3+0.3 1.4+0.2 0.35+0.2 E, s II it 0 .1 5 (1 5 4 )

1C12

Abstract: 1300nm TPA photodiode photo diode array InGaAs TPA-1C12 PIN 1300nm
Contextual Info: TPA-1C12 InGaAs PIN photodiode Array FEATURES: • Optimized for fiber optic application. • Low dark current and low capacitance. ELECTRO-OPTICAL CHARACTERISTICS: PARAMETERS SYMBOL Responsivity Surface reflectivity 2 Responsivity uniformity Dark Current

InGaas PIN photodiode chip

Abstract: TPD-1C12-007 InGaas PIN photodiode, 3mm
Contextual Info: TPD-1C12-007 InGaAs PIN photodiode chip FEATURES: • Monitor optic application. • Low dark current and low capacitance. ELECTRO-OPTICAL CHARACTERISTICS: PARAMETERS SYMBOL Responsivity Breakdown Voltage Capacitance Fig. 1 MIN R VBD C Typical Dark Current and Forward Current

InGaas PIN photodiode chip

Abstract: PIN photodiode chip 850nm PIN photodiode chip
Contextual Info: TPD-1C12-006 InGaAs PIN photodiode chip FEATURES: • Monitor optic application. • Low dark current and low capacitance. ELECTRO-OPTICAL CHARACTERISTICS: PARAMETERS SYMBOL Responsivity Breakdown Voltage Capacitance Fig. 1 R VBD C MIN TYP MAX UNIT TEST CONDITIONS

Contextual Info: TPD-1C12-000 InGaAs PIN photodiode chip FEATURES: • Optimized for fiber optic application. • Low dark current and low capacitance. ELECTRO-OPTICAL CHARACTERISTICS: PARAMETERS SYMBOL Responsivity Dark Current Breakdown Voltage Capacitance Bandwidth Fig. 1

1C5610

Contextual Info: t h ì r d 'a n g le PROJECTION I , ITEM .C O D E CAPACITANCE D IM E N S IO N S •* ECHU 1CI01OX5 0.0001 (101) ir 1C1210X5 0.00012 (121) li 1C1510X5 0.00015 (151) n 1C1810X5 0.00018 (181) // IC2210X5 0.00022 (221) il 1C2710X5 0.00027 (271) n 1C33ÎOX5 0.00033 (331)

20D-1C12D0

Abstract: 20D-1C22D0 20D-1C32D0
Contextual Info: SPECIFICATIONS Model Number TYPE 20D-1C 12D0 Contact Material Rhodium Contact Form 1Form C Parameters Test Conditions Units 20D-1C12D0 20D-1C22D0 20D-1C32D0 Coil Specs Nominal Coil Voltage Max Coil Voltage ± 10% at 20° C VDC 5.0 12.0 24.0 15° C to 35° C

CD40298

Contextual Info: E SOLID G 3875081 STATE Gl D e 3ö?SDö1i G E S OL ID STATE 01E 0 D1 3 1c12 Ö 13192 7 1 ¥ £ - 3 3 -¿ > CD4029B Types CMOS Presettable Up/Down Counter Binary or BCD -D ecade

Contextual Info: ECWU 1C124JC9 // 1C154JC9 il 1C184JC9 il 1C224JC9 Il 1C274JC9 il 1C334JC9 il 1C394JC9 il 1C474JC9 CD O c CD ITEM CODE CD *— CD THIRD ANGLE PROJECTION DIMENSIONS T Y P E H W L L i , L2 4.8+0.2 3.3+0.3 1.4+0.2 0.35+0.2 Ei il II ii 2.0+0.2 E2 CAPACITANCE ¡¿F

pin InGaAs chip

Abstract: pin 1300nm
Contextual Info: TPD-1C12-002 InGaAs PIN photodiode chip FEATURES: • Optimized for fiber optic application. • Low dark current and low capacitance. ELECTRO-OPTICAL CHARACTERISTICS: PARAMETERS SYMBOL Responsivity Dark Current Breakdown Voltage Capacitance Bandwidth Fig. 1

12E1

Abstract: 20D-1C12E1 20D-1C22E1 20D-1C32E1
Contextual Info: SPECIFICATIONS Model Number TYPE 20D-1C 12E1 Parameters Test Conditions Units 20D-1C12E1 20D-1C22E1 20D-1C32E1 Coil Specs ± 10% at 20° C VDC 5.0 12.0 24.0 15° C to 35° C VDC 5.5 13.2 26.4 15° C to 35° C W 120 600 1800 Coil Resistance VDC-Max 3.6 9.0

1C12

Contextual Info: TPD-1C12 InGaAs PIN photodiode chip FEATURES: • Optimized for fiber optic application. • Low dark current and low capacitance. ELECTRO-OPTICAL CHARACTERISTICS: PARAMETERS SYMBOL Responsivity Forward Current Dark Current Breakdown Voltage Capacitance R

Contextual Info: TOSHIBA ASIC TO S H IB A A M E R IC A ELECTRO NIC C O M P O N E N T S , INC. CMOS ASIC 1C120G SERESGITE /«RAY Toshiba Corporation has introduced a series of gate arrays that use a 1.0-micron CMOS process to reduce gate delays by 35%. Applications include consolidating high-speed circuits into a single package, especially in highperformance systems.

20D-1C12N0

Abstract: 20D-1C22N0 20D-1C32N0
Contextual Info: SPECIFICATIONS Model Number TYPE 20D-1C 12N0 Contact Material Rhodium Contact Form 1Form C Parameters Test Conditions Units 20D-1C12N0 20D-1C22N0 20D-1C32N0 Coil Specs Nominal Coil Voltage Max Coil Voltage ± 10% at 20° C VDC 5.0 12.0 24.0 15° C to 35° C

ci 28448

Contextual Info: HYUNDAI ELECTRONICS SIE D • 4b750êfl DDDDbTT b?ñ « H Y N K PRELIMINARY •HYUNDAI SEMICONDUCTOR HY534256A 2' iK 4-ill I ( M( S m m i M 1C1200A-JAN92 DESCRIPTION TheHY534256A is a high speed, low power 262,144X 4 bit CMOS dynamic random access memory. Fabricated with the HYUNDAI

mathcad flyback

Contextual Info: r&TOKO TK75003 POWER-FACTOR-CORRECTION/PWM CONTROLLER FEATURES APPLICATIONS • Power Factor Correction/Line Harmonics Reduction to Meet IEC1000-3-2 Requirements ■ Optimized for Offline Operation ■ Maximum Duty Ratio 88% typ. ■ Frequency Reduction for Improved Over-Current

H683

Abstract: 1H104 1H822JB5 1h181 1H822 1h153j 1H473J 1C153 1H472JB5 1h104j
Contextual Info: Film Capacitors Chip Type ECH-U B /ECW-U(B) Series Uses simple moldless construction and advanced manufacturing techniques, as well as well-established stacking technology. * Features • • ♦ Small size (minimum size 2.0 x 1.25 mm) High moisture resistance (85 °C, 86 %RH, W. V x 1.0

S1D13513

Abstract: 1B10h Epson S1D13513 Graphics Driver icsp1 300eh RF 300eh X78B-A-001-01 ICSP2 CTC 1061
Contextual Info: S1D13513 Display Controller Hardware Functional Specification Document Number: X78B-A-001-01 Status: Revision 1.0 Issue Date: 2007/06/05 SEIKO EPSON CORPORATION 2006-2007. All Rights Reserved. Information in this document is subject to change without notice. You may download and use this document, but only for your own use in

Contextual Info: MACH 5 CPLD Family BEYOND PERFORMANCE Fifth G eneration MACH A r c h it e l i. . ^ FEATURES — 128 to 512 m acrocell densities — 68 to 256 l/Os ♦ Wide selection of density and I/O combinations to support most application needs — 6 m acrocell density o ptions

MACH5-128/68-7/10/12/15

Contextual Info: COM’L: -7/10/12/15 PRELIMINARY AMD£I IND: -10/12/15/20 The MACH5-128 MACH5-128/68-7/10/12/15/20 MACH5-128/104-7/10/12/15/20 MACH5-128/120-7/10/12/15/20 Fifth Generation MACH Architecture DISTINCTIVE CHARACTERISTICS • Fifth generation MACH architecture

5d3 diode

Abstract: 6B15 7b12 MACH Programmer transistor 7B12 2D15 PAL 007 A power generator control circuit schematic 1C12 5D10
Contextual Info: MACH 5 CPLD Family I MAC ncludes H Adv anc 5A Fam e In form ily atio n Fifth Generation MACH Architecture FEATURES ◆ High logic densities and I/Os for increased logic integration ◆ ◆ ◆ ◆ ◆ ◆ ◆ — 128 to 512 macrocell densities — 68 to 256 I/Os