MARKING QE Search Results

NPN marking 8e

Abstract: FMMT2222A H9 sot 23 BCV71 BCV72 BCW29 BCW30 BCW31 BCW32 BCW33
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LISTANO DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW60A BCW60B BCW60C BCW60D BCW61A BCW61B BCW61C BCW61D BCW65A BCW65B BCW65C

QEN79

Abstract: J-STD-0001 TEMEX SMD QEN79 14x9 transistor SMD p02 smd crystal oscillator 2 pin 50 Mhz p02 smd crystal oscillator smd smd marking BH crystal oscillator marking
Contextual Info: FREQUENCY XOHyb SMD QEN79 Defense airborne – Crystal oscillator – XO General Specification rev-A Description .P02 Marking .P02

BCW65C

Abstract: FERRANTI ELECTRONICS transistors DEVICE MARKING BF197P BCV71 BCV72 BCW29 BCW30 BCW31 BCW32
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LISTANO DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW 29 BCW 30 BCW31 BCW 32 BCW 33 BCW 60A BCW 60B BCW 60C BCW 60D B CW 61A BCW 61B BCW 61C B CW 61D B CW 65A

2SA amplifier

Abstract: H1000I 2SA1514K 2SA1579 2SC3906K 2SC4102 transistor 2SA transistor PNP
Contextual Info: 2SA1514K 2SA1579 Transistor, PNP Features Dimensions Units : mm • available in SMT3 (SMT, SC-59) and UMT3 (UMT, SC-70) packages • package marking: 2SA1514K and 2SA1579; R-*, where ★ is hFE code • • high breakdown voltage: V qeo = -120 V complementary pair with 2SC3906K

A1727

Abstract: A1727 transistor
Contextual Info: 2SA1727F5 Transistor, PNP Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: A1727*Q, where ★ is hFE code and □ is lot number • high breakdown voltage, V qeo = - 400V low collector saturation voltage, ^C E (sat) ^ -1.0 V for

Contextual Info: Transistor, NPN 2SD1782K Features • available in SMT3 SMT, SC-59 package • package marking: 2SD1782K; AJ-fr, where ★ is hFE code • low collector saturation voltage, typically VCE(sat) = 0.2 V at lc/lB =0.5 A/50 mA • high breakdown voltage BV qeo =

LARGE SURFACE AREA PHOTODIODE filter

Abstract: PDV-V400 V400 color filter photodiode
Contextual Info: PHOTONIC Silicon Photodiode, Filter Combination Photovoltaic photopic response Type PDV-V400 DETECTORS INC. EPOXY COVERING EYELET PACKAGE DIMENSIONS INCH [mm] WIRE BONDS EPOXY MARKING INK "V400" ACTIVE AREA SURFACE +- 0.005 [0.13] 0.080 [2.03] 0.200 [5.08] DIA

color filter photodiode

Abstract: PDV-V405 1054 nm
Contextual Info: PHOTONIC Silicon Photodiode, Filter Combination Photovoltaic 500 nm blue color Type PDV-V405 DETECTORS INC. EPOXY COVERING EYELET PACKAGE DIMENSIONS INCH [mm] WIRE BONDS EPOXY MARKING INK (WAVE LENGTH NO.) ACTIVE AREA SURFACE +- 0.005 [0.13] 0.080 [2.03]

PDV-V403

Contextual Info: PHOTONIC Silicon Photodiode, Filter Combination Photovoltaic 600 nm red color Type PDV-V403 DETECTORS INC. EPOXY COVERING EYELET PACKAGE DIMENSIONS INCH [mm] WIRE BONDS EPOXY MARKING INK (WAVE LENGTH NO.) ACTIVE AREA SURFACE +- 0.005 [0.13] 0.080 [2.03]

PDG-V455

Contextual Info: PHOTONIC Silicon Photodiode, Filter Combination Photovoltaic center wavelength 550 nm Type PDG-V455 DETECTORS INC. EPOXY COVERING EYELET PACKAGE DIMENSIONS INCH [mm] WIRE BONDS EPOXY MARKING INK (WAVE LENGTH NO.) ACTIVE AREA SURFACE +- 0.005 [0.13] 0.080 [2.03]

PDI-V495

Abstract: "IR Sensor"
Contextual Info: PHOTONIC Silicon Photodiode, Filter Combination Photovoltaic center wavelength 950 nm Type PDI-V495 DETECTORS INC. EPOXY COVERING EYELET PACKAGE DIMENSIONS INCH [mm] WIRE BONDS EPOXY MARKING INK (WAVE LENGTH NO.) ACTIVE AREA SURFACE +- 0.005 [0.13] 0.080 [2.03]

transistor 355

Abstract: PDU-V425
Contextual Info: PHOTONIC Silicon Photodiode, Filter Combination Photovoltaic center wavelength 254 nm Type PDU-V425 DETECTORS INC. EPOXY COVERING EYELET PACKAGE DIMENSIONS INCH [mm] WIRE BONDS EPOXY MARKING INK (WAVE LENGTH NO.) ACTIVE AREA SURFACE +- 0.005 [0.13] 0.080 [2.03]

metal detector sensor

Abstract: photovoltaic sensor
Contextual Info: PHOTONIC Silicon Photodiode, Filter Combination Photovoltaic center wavelength 900 nm Type PDI-V490 DETECTORS INC. EPOXY COVERING EYELET PACKAGE DIMENSIONS INCH [mm] WIRE BONDS EPOXY MARKING INK (WAVE LENGTH NO.) ACTIVE AREA SURFACE +- 0.005 [0.13] 0.080 [2.03]

detector 1100 nm

Contextual Info: PHOTONIC Silicon Photodiode, Filter Combination Photovoltaic center wavelength 632 nm Type PDR-V463 DETECTORS INC. EPOXY COVERING EYELET PACKAGE DIMENSIONS INCH [mm] WIRE BONDS EPOXY MARKING INK (WAVE LENGTH NO.) ACTIVE AREA SURFACE +- 0.005 [0.13] 0.080 [2.03]

488nm

Contextual Info: PHOTONIC Silicon Photodiode, Filter Combination Photovoltaic center wavelength 488 nm Type PDB-V448 DETECTORS INC. EPOXY COVERING EYELET PACKAGE DIMENSIONS INCH [mm] WIRE BONDS EPOXY MARKING INK (WAVE LENGTH NO.) ACTIVE AREA SURFACE +- 0.005 [0.13] 0.080 [2.03]

PDU-V425

Abstract: ultraviolet detector UV diode 200 nm UV diode 320 nm UV diode 365 nm UV Photodiode
Contextual Info: PHOTONIC Silicon Photodiode, Filter Combination Photovoltaic center wavelength 254 nm Type PDU-V425 DETECTORS INC. EPOXY COVERING EYELET PACKAGE DIMENSIONS INCH [mm] WIRE BONDS EPOXY MARKING INK (WAVE LENGTH NO.) ACTIVE AREA SURFACE +- 0.005 [0.13] 0.080 [2.03]

PDR-V466

Contextual Info: PHOTONIC Silicon Photodiode, Filter Combination Photovoltaic center wavelength 660 nm Type PDR-V466 DETECTORS INC. EPOXY COVERING EYELET PACKAGE DIMENSIONS INCH [mm] WIRE BONDS EPOXY MARKING INK (WAVE LENGTH NO.) ACTIVE AREA SURFACE +- 0.005 [0.13] 0.080 [2.03]

PDI-V480

Contextual Info: PHOTONIC Silicon Photodiode, Filter Combination Photovoltaic center wavelength 800 nm Type PDI-V480 DETECTORS INC. EPOXY COVERING EYELET PACKAGE DIMENSIONS INCH [mm] WIRE BONDS EPOXY MARKING INK (WAVE LENGTH NO.) ACTIVE AREA SURFACE +- 0.005 [0.13] 0.080 [2.03]

PDR-V468

Contextual Info: PHOTONIC Silicon Photodiode, Filter Combination Photovoltaic center wavelength 680 nm Type PDR-V468 DETECTORS INC. EPOXY COVERING EYELET PACKAGE DIMENSIONS INCH [mm] WIRE BONDS EPOXY MARKING INK (WAVE LENGTH NO.) ACTIVE AREA SURFACE +- 0.005 [0.13] 0.080 [2.03]

PDV-V404

Abstract: color filter photodiode LARGE SURFACE AREA PHOTODIODE filter 550-nm CWL
Contextual Info: PHOTONIC Silicon Photodiode, Filter Combination Photovoltaic 550 nm green color Type PDV-V404 DETECTORS INC. EPOXY COVERING EYELET PACKAGE DIMENSIONS INCH [mm] WIRE BONDS EPOXY MARKING INK (WAVE LENGTH NO.) ACTIVE AREA SURFACE +- 0.005 [0.13] 0.080 [2.03]

photovoltaic sensor

Abstract: metal detector sensor
Contextual Info: PHOTONIC Silicon Photodiode, Filter Combination Photovoltaic center wavelength 880 nm Type PDI-V488 DETECTORS INC. EPOXY COVERING EYELET PACKAGE DIMENSIONS INCH [mm] WIRE BONDS EPOXY MARKING INK (WAVE LENGTH NO.) ACTIVE AREA SURFACE +- 0.005 [0.13] 0.080 [2.03]

smd k72 y5

Abstract: K72 y8 k72 y4 BAS70WT 46A gez SMBJ8.5CA SMBJ11CA SMD Marking K72 sk 75 dgm marking f5 sot-89
Contextual Info: Micro Commercial Components Corp. Marking Code For MCC's SMD Devices 1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 1SS226 1SS355 1SS357 1SS389 1SS400 1SS404 2N7002 2N7002DW 2N7002T 2N7002W 2SA1037-Q 2SA1037-R 2SA1037-S 2SA1162-GR

Contextual Info: DTB114TK Digital transistor, PNP, with 1 resistor Features Dimensions Units: mm • available in an SMT3 (SMT, SC-59) package DTB114TK (SMT3) • package marking: DTB114TK; E94 • a built-in bias resistor allows inverter circuit configuration without external

BC239C equivalent

Abstract: BC550C equivalent bc237a equivalent bc238b equivalent BC548C equivalent bc238a equivalent bc108b equivalent bc549c equivalent bc183 equivalent BC237B equivalent
Contextual Info: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A