MARKING QE Search Results

NPN marking 8e

Abstract: FMMT2222A H9 sot 23 BCV71 BCV72 BCW29 BCW30 BCW31 BCW32 BCW33
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LISTANO DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW60A BCW60B BCW60C BCW60D BCW61A BCW61B BCW61C BCW61D BCW65A BCW65B BCW65C

QEN79

Abstract: J-STD-0001 TEMEX SMD QEN79 14x9 transistor SMD p02 smd crystal oscillator 2 pin 50 Mhz p02 smd crystal oscillator smd smd marking BH crystal oscillator marking
Contextual Info: FREQUENCY XOHyb SMD QEN79 Defense airborne – Crystal oscillator – XO General Specification rev-A Description .P02 Marking .P02

BCW65C

Abstract: FERRANTI ELECTRONICS transistors DEVICE MARKING BF197P BCV71 BCV72 BCW29 BCW30 BCW31 BCW32
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LISTANO DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW 29 BCW 30 BCW31 BCW 32 BCW 33 BCW 60A BCW 60B BCW 60C BCW 60D B CW 61A BCW 61B BCW 61C B CW 61D B CW 65A

2SA amplifier

Abstract: H1000I 2SA1514K 2SA1579 2SC3906K 2SC4102 transistor 2SA transistor PNP
Contextual Info: 2SA1514K 2SA1579 Transistor, PNP Features Dimensions Units : mm • available in SMT3 (SMT, SC-59) and UMT3 (UMT, SC-70) packages • package marking: 2SA1514K and 2SA1579; R-*, where ★ is hFE code • • high breakdown voltage: V qeo = -120 V complementary pair with 2SC3906K

A1727

Abstract: A1727 transistor
Contextual Info: 2SA1727F5 Transistor, PNP Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: A1727*Q, where ★ is hFE code and □ is lot number • high breakdown voltage, V qeo = - 400V low collector saturation voltage, ^C E (sat) ^ -1.0 V for

Contextual Info: Transistor, NPN 2SD1782K Features • available in SMT3 SMT, SC-59 package • package marking: 2SD1782K; AJ-fr, where ★ is hFE code • low collector saturation voltage, typically VCE(sat) = 0.2 V at lc/lB =0.5 A/50 mA • high breakdown voltage BV qeo =

LARGE SURFACE AREA PHOTODIODE filter

Abstract: PDV-V400 V400 color filter photodiode
Contextual Info: PHOTONIC Silicon Photodiode, Filter Combination Photovoltaic photopic response Type PDV-V400 DETECTORS INC. EPOXY COVERING EYELET PACKAGE DIMENSIONS INCH [mm] WIRE BONDS EPOXY MARKING INK "V400" ACTIVE AREA SURFACE +- 0.005 [0.13] 0.080 [2.03] 0.200 [5.08] DIA

color filter photodiode

Abstract: PDV-V405 1054 nm
Contextual Info: PHOTONIC Silicon Photodiode, Filter Combination Photovoltaic 500 nm blue color Type PDV-V405 DETECTORS INC. EPOXY COVERING EYELET PACKAGE DIMENSIONS INCH [mm] WIRE BONDS EPOXY MARKING INK (WAVE LENGTH NO.) ACTIVE AREA SURFACE +- 0.005 [0.13] 0.080 [2.03]

PDV-V403

Contextual Info: PHOTONIC Silicon Photodiode, Filter Combination Photovoltaic 600 nm red color Type PDV-V403 DETECTORS INC. EPOXY COVERING EYELET PACKAGE DIMENSIONS INCH [mm] WIRE BONDS EPOXY MARKING INK (WAVE LENGTH NO.) ACTIVE AREA SURFACE +- 0.005 [0.13] 0.080 [2.03]

PDG-V455

Contextual Info: PHOTONIC Silicon Photodiode, Filter Combination Photovoltaic center wavelength 550 nm Type PDG-V455 DETECTORS INC. EPOXY COVERING EYELET PACKAGE DIMENSIONS INCH [mm] WIRE BONDS EPOXY MARKING INK (WAVE LENGTH NO.) ACTIVE AREA SURFACE +- 0.005 [0.13] 0.080 [2.03]

PDI-V495

Abstract: "IR Sensor"
Contextual Info: PHOTONIC Silicon Photodiode, Filter Combination Photovoltaic center wavelength 950 nm Type PDI-V495 DETECTORS INC. EPOXY COVERING EYELET PACKAGE DIMENSIONS INCH [mm] WIRE BONDS EPOXY MARKING INK (WAVE LENGTH NO.) ACTIVE AREA SURFACE +- 0.005 [0.13] 0.080 [2.03]

PDU-V425

Abstract: ultraviolet detector UV diode 200 nm UV diode 320 nm UV diode 365 nm UV Photodiode
Contextual Info: PHOTONIC Silicon Photodiode, Filter Combination Photovoltaic center wavelength 254 nm Type PDU-V425 DETECTORS INC. EPOXY COVERING EYELET PACKAGE DIMENSIONS INCH [mm] WIRE BONDS EPOXY MARKING INK (WAVE LENGTH NO.) ACTIVE AREA SURFACE +- 0.005 [0.13] 0.080 [2.03]

smd k72 y5

Abstract: K72 y8 k72 y4 BAS70WT 46A gez SMBJ8.5CA SMBJ11CA SMD Marking K72 sk 75 dgm marking f5 sot-89
Contextual Info: Micro Commercial Components Corp. Marking Code For MCC's SMD Devices 1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 1SS226 1SS355 1SS357 1SS389 1SS400 1SS404 2N7002 2N7002DW 2N7002T 2N7002W 2SA1037-Q 2SA1037-R 2SA1037-S 2SA1162-GR

Contextual Info: DTB114TK Digital transistor, PNP, with 1 resistor Features Dimensions Units: mm • available in an SMT3 (SMT, SC-59) package DTB114TK (SMT3) • package marking: DTB114TK; E94 • a built-in bias resistor allows inverter circuit configuration without external

Contextual Info: SIEMENS BF 775 NPN Silicon RF Transistor •Especially suitable forT V -sat and UHF tuners ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BF 775 LOs Q62702-F102 1= B Package 2= E 3=C

SMBJ8.5CA

Abstract: SMBJ20A SMBJ15A SMBJ11CA SMBJ130A SMBJ170A SMBJ130CA SMBJ17A SMBJ14CA SMBJ58A
Contextual Info: SMBJ SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR STAND-OFF VOLTAGE - 5.0 TO 440 Volts 600 Watt Peak Pulse Power DEVICE REVERSE REVERSE BREAKDOW BREAKDOW MAXIMUM PEAK TEST MARKING STANDN VOLTAGE N VOLTAGE CLAMPING PULSE LEAKAGE PART NUMBER OFF CURRENT

SMC/SMBJ

Contextual Info: SANGDEST MICROELECTRONICS SMBJ SERIES 600W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR Green Products Technical Data Data Sheet N0193, Rev. C Marking Diagram: Where XXXXX is YYWWL KD/AD YY WW L SMBJ5.0 = Part Name = Year = Week = Lot Number SMBJ5.0C Cautions：Molding resin

NPN transistor x11

Abstract: marking code 2AW SL 100 NPN Transistor base emitter collector 6-pin "454" UMX11N 2SC2059K 6pin MARKING code T surface mount transistor 8 TRANSISTOR x11 HZ U35
Contextual Info: UMX11N Transistor, dual, NPN Features Dimensions Units: mm • available in UMT6 (UMT6) package • package marking: X11 • package contains two independent NPN transistors (2SC2059K) • • same size as UMT3 (UMT, C-70) so same placement machine can be

Contextual Info: SIEMENS BFP181R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • f j = 8GHz F = 1.45dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code

Contextual Info: SIEMENS BCP 51M . BCP53M PNP Silicon AF Transistor • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP 54M.BCP 56M NPN Type Marking Ordering Code Pin Configuration BCP 51M

transistor Bf 966

Contextual Info: SIEMENS BF 771W NPN Silicon RF Transistor • For modulators and amplifiers in TV and VCR tuners ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code Type Pin Configuration 1= B Q62702-F1519 2=E II CO RBs o BF 771W

SL 100 NPN Transistor base emitter collector

Abstract: SL 100 NPN Transistor BF 273 transistor transistor bf 274 BF 274 transistor 2SD2114 transistor CR NPN
Contextual Info: 2SD2114K Transistor, NPN Features Dimensions Units : mm • available in SMT3 (SMT, SC-59) package • package marking: 2SD2114K; BB-*, where ★ is hFE code |E3 S i 24 Q- • high DC current amplification, typically hFE = 1200 • high emitter-base voltage,

Contextual Info: SIEMENS BCR 148W NPN Silicon Digital Transistor • Switching circuit, ¡nverter, interface circuit, driver circuit ' Built in bias resistor Ri=47kiì, R2=47kQ Pin Configuration Q62702-C2291 1= B Package LU II CVÍ II Ordering Code WEs O Marking BCR 148W

Contextual Info: SIEMENS PZTA 42 NPN Silicon High Voltage Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: PZTA 92 PNP Type Marking Ordering Code Pin Configuration PZTA 42 PZTA 42 Q62702-Z2035 1=B 2=C Package 3=E