MARKING KF Search Results

KTK5162S

Contextual Info: SEMICONDUCTOR KTK5162S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 KF 1 2 Item Marking Description Device Mark KF KTK5162S * Lot No. 01 2002. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

KF7N65

Abstract: KF7N65F 7N65 kf7n TO220IS TO-220IS
Contextual Info: SEMICONDUCTOR KF7N65F MARKING SPECIFICATION TO-220IS PACKAGE 1. Marking method Laser Marking 2. Marking No. Item 1 KF7N65 2 F 801 3 Marking Description KF KEC Fresh FET 7N65 7N65 Package & Version F TO-220IS Lot No. 801 Device Name 2008. 6. 16 Revision No : 0

70N06

Abstract: TO220IS TO-220IS KF70N06 KF70N06F F8013
Contextual Info: SEMICONDUCTOR KF70N06F MARKING SPECIFICATION TO-220IS PACKAGE 1. Marking method Laser Marking 2. Marking No. Item 1 KF70N06 2 F 801 3 Marking Description KF KEC Fresh FET 70N06 70N06 Package & Version F TO-220IS Lot No. 801 Device Name 2008. 6. 16 Revision No : 0

kf80n08

Abstract: 80N08 fet. kf 80n08 KF80N08P TO-220AB marking 2008 TO220AB FET MARKING
Contextual Info: SEMICONDUCTOR KF80N08P MARKING SPECIFICATION TO-220AB PACKAGE 1. Marking method Laser Marking 2. Marking No. 1 KF80N08 2 P Item 801 3 Marking Description KF KEC Fresh FET 80N08 80N08 Package & Version P TO-220AB Lot No. 801 Device Name 2008. 6. 16 Revision No : 0

10n50

Abstract: FET 10n50 KF10N50 10n5 KF10N50F TO220IS TO-220IS
Contextual Info: SEMICONDUCTOR KF10N50F MARKING SPECIFICATION TO-220IS PACKAGE 1. Marking method Laser Marking 2. Marking KF10N50 1 F 2 No. Item 801 3 Marking Description KF KEC Fresh FET 10N50 10N50 Package & Version F TO-220IS Lot No. 801 Device Name 2008. 10. 13 Revision No : 0

KF5N50

Abstract: 5n50 KF 5N50 DPak KF5N50DZ KF5N50D 5N-50 D-PAK package KF5N dpak Package
Contextual Info: SEMICONDUCTOR KF5N50DZ MARKING SPECIFICATION DPAK PACKAGE 1. Marking method Laser Marking. 2. Marking 2 No. Item KF5N50 1 DZ 3 801 Marking Description KF KEC Fresh FET 5N50 5N50 Revision DZ DPAK Lot No. 801 Device Name 2008. 12. 1 Revision No : 0 8 Year 0~9 : 2000~2009

kf80n08

Abstract: 80N08 TO-220IS kf80n08f fet. kf 80n08 TO220IS DSA0010422
Contextual Info: SEMICONDUCTOR KF80N08F MARKING SPECIFICATION TO-220IS PACKAGE 1. Marking method Laser Marking 2. Marking No. Item 1 KF80N08 2 F 801 3 Marking Description KF KEC Fresh FET 80N08 80N08 Package & Version F TO-220IS Lot No. 801 Device Name 2008. 6. 16 Revision No : 0

GR221

Abstract: 1578010000 9004530000 1669620000 CONNECTOR POWERMATE RSV 1.6 ZE 36 stv connector round 1705220 DFFC 0.5-1.0
Contextual Info: Miscellaneous Cover hoods Minimate Range • installation without tools Technical data • dekafix marking Insulation material Flammability class. Materials PBT UL 94 V-0 • additional marking with labels possible System characteristic values Pitch Colour

GENERAL SEMICONDUCTOR MARKING mJ SMA ED

Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
Contextual Info: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)

117MAABW

Abstract: 117M14BW 117MCCBW
Contextual Info: 3M Grafoplast™ TRASP System Durable Custom Identification For years, 3M has provided a variety of reliable solutions for wire marking and identification. Now 3M is introducing a new manual marking and identification system – from Grafoplast, a 3M company – for creating custom labels for

S02222A

Abstract: S02222
Contextual Info: SO2222 S02222A r z 7 SGS-THOM SON Ä T # KfilOeilSILIOTIfi! «! SMALL SIGNAL NPN TRANSISTORS Type Marking S02222 N13 S02222A N20 • SILICON EPITAXIAL PLANAR NPN TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . MEDIUM CURRENT AF AMPLIFICATION

Contextual Info: SIEMENS BCR 521 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit >Built in bias resistor Ri=1 kil, R2=1 kfl FL BCR 521 XVs Pin Configuration Q62702-C2355 1 =B Package o II CO Marking Ordering Code LU II <\J

Contextual Info: Chip Inductors • Type 2520 1008 FC ● Recommended Land Pattern in mm (not to scale) ● Dimensions in mm (not to scale) 1.2 to 1.6 1.2 2.0 Marking 2.5 1.4 to 1.5 1.6 3.5 to 4.0 0.4 ■ Examples Part No. ELJFCR22M/KF ELJFCR27M/KF ELJFCR33M/KF ELJFCR39M/KF

Contextual Info: Chip Inductors • Type 3225 1210 FA ● Recommended Land Pattern in mm (not to scale) ● Dimensions in mm (not to scale) 1.9 to 2.4 1.9 2.5 Marking 3.2 1.6 to 2.0 2.2 4.0 to 4.6 0.6 ■ Examples Part No. ELJFAR22M/KF2 ELJFAR27M/KF2 ELJFAR33M/KF2 ELJFAR39M/KF2

Contextual Info: SIEMENS Silicon Schottky Diode BAT 15-098 Preliminary Data • DBS mixer application to 10 GHz • Low noise figure • Low barrier type ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code Pin Configuration

Contextual Info: BF820 BF822 SILICON EPITAXIAL TRANSISTORS N -P-N transistors Marking BF820 = IV BF822 = IX PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm O.U Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR ABSOLUTE MAXIMUM RATINGS Collector-base voltage open emitter

smd k72 y5

Abstract: K72 y8 k72 y4 BAS70WT 46A gez SMBJ8.5CA SMBJ11CA SMD Marking K72 sk 75 dgm marking f5 sot-89
Contextual Info: Micro Commercial Components Corp. Marking Code For MCC's SMD Devices 1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 1SS226 1SS355 1SS357 1SS389 1SS400 1SS404 2N7002 2N7002DW 2N7002T 2N7002W 2SA1037-Q 2SA1037-R 2SA1037-S 2SA1162-GR

6050

Contextual Info: SIEMENS Silicon Switching Diode SMBD 6050 • For high-speed switching applications Type Marking Ordering Code tape and reel SMBD 6050 s5A Q68000-A8439 Pin Configuration Package1) SOT-23 < i^ i s o-o ^ ' EHA07002 Maximum Ratings Parameter

npn 1b

Abstract: CMBT3903 CMBT3904
Contextual Info: L CMBT3903 CMBT3904 SILICON EPITAXIAL TRANSISTORS N-P-N transistors Marking CMBT3903 = 1Y CMBT3904 = 1A PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 0.14 0.09 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR ABSOLUTE MAXIMUM RATINGS Collector-base voltage open emitter

Contextual Info: DTC114TE DTC114TUA DTC114TKA Digital transistor, NPN, with 1 resistor Features Dimensions Units : mm available in EMT3 (EM3), UMT3 (UMT, SC-70), and SMT3 (SMT, SC-59) packages package marking: DTC114TE, DTC114TUA, and DTC114TKA; 04 a built-in bias resistor allows inverter

smd marking

Abstract: Smd marking code SMD MARKING CODE 02 FOX ELECTRONICS DATE CODE smd code marking WE Marking Codes smd marking code 2002 smd marking codes smd transistor marking code transistor SMD MARKING CODE
Contextual Info: PRODUCT NOTIFICATION Product Change Notification PCN No: 159 Fox Reference ECN and or NPN No: 153 Report Date: April 01, 2002 Subject: SMD Product Part Marking Products Affected: F3345 F4200 F530L FSO2 F3355 F4300 F550L FSO3 F4100 F3400 F5500H F4101 F3410

k72 sot-23

Abstract: sot-23 Marking KN 72k SOT23 k72 r4 UM6K1 SI2302 SI2303
Contextual Info: TM Micro Commercial Components MOSFETS MCC Part Number Power Rating DrainSource Voltage Gate Threshold Voltage Drain Current Static DrainSource On Resistance PD VDS VGS ID rDS on (mW) V V mA Ω Polarity Marking Code Package Type Internal Diagram SMALL SIGNAL MOSFETS

6P060AS

Contextual Info: DSEP6-06AS V RRM = I FAV = t rr = HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 600 V 6A 20 ns Part number 3 1 Marking on Product: 6P060AS Backside: cathode Features / Advantages: Package: Applications: Planar passivated chips

xds pnp

Abstract: Q62702-C2383 xds transistor marking XDS sot23 Bcr555 SOT-23 marking XDs
Contextual Info: SIEMENS BCR 555 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor Rn = 2.2kii, R2 = 10kii Type Marking Ordering Code Pin Configuration BCR 555 XDs 1=B Q62702-C2383 Package 2=E 3=C SOT-23