MARKING I58 Search Results

Contextual Info: I587 Series 2.0 mm x 2.5 mm Ceramic Package SMD TCXO Applications: Product Features: Low Current Consumption Ultra Miniature Package RoHS Compliant Compatible with Leadfree Processing Frequency 2.50+/- 0.2 GPS, GPS Module CDMA/WCDMA 802.11 / Wifi T1/E1, T3/E3

Contextual Info: I587 Series 2.0 mm x 2.5 mm Ceramic Package SMD TCXO Applications: Product Features: Low Current Consumption Ultra Miniature Package RoHS Compliant Compatible with Leadfree Processing 2.50+/- 0.2 GPS, GPS Module CDMA/WCDMA 802.11 / Wifi T1/E1, T3/E3 Frequency

Contextual Info: I587 Series 2.0 mm x 2.5 mm Ceramic Package SMD TCXO Applications: Product Features: Low Current Consumption Ultra Miniature Package RoHS Compliant Compatible with Leadfree Processing GPS, GPS Module CDMA/WCDMA 802.11 / Wifi T1/E1, T3/E3 Frequency Contact Sales Channel for available frequencies

TCXO

Contextual Info: I587/I787 Series 2.0 mm x 2.5 mm Ceramic Package SMD TCXO Applications: Product Features: Low Current Consumption Ultra Miniature Package RoHS Compliant Compatible with Leadfree Processing GPS, GPS Module CDMA/WCDMA 802.11 / Wifi T1/E1, T3/E3 Frequency Contact Sales Channel for available frequencies

Contextual Info: I583/I783 Series 2.0 mm x 2.5 mm Ceramic Package SMD TCXO Applications: Product Features: Low Current Consumption Ultra Miniature Package RoHS Compliant Compatible with Leadfree Processing 2.50+/- 0.2 Server & Storage CDMA/WCDMA 802.11 / Wifi T1/E1, T3/E3

Contextual Info: I583/I783 Series 2.0 mm x 2.5 mm Ceramic Package SMD TCXO Applications: Product Features: Low Current Consumption Ultra Miniature Package RoHS Compliant Compatible with Leadfree Processing 2.50+/- 0.2 Server & Storage CDMA/WCDMA 802.11 / Wifi T1/E1, T3/E3

TCXO

Contextual Info: I583/I783 Series 2.0 mm x 2.5 mm Ceramic Package SMD TCXO Applications: Product Features: Low Current Consumption Ultra Miniature Package RoHS Compliant Compatible with Leadfree Processing 2.50+/- 0.2 Server & Storage CDMA/WCDMA 802.11 / Wifi T1/E1, T3/E3

Contextual Info: 2.0 mm x 2.5 mm Ceramic Package SMD TCXO Product Features: I583/I783 Series Applications: Low Current Consumption Ultra Miniature Package RoHS Compliant Compatible with Leadfree Processing Server & Storage CDMA/WCDMA 802.11 / Wifi T1/E1, T3/E3 2.50+/- 0.2

TRANSISTOR MARKING YB 1L

Abstract: 2SK 2SA 2SC equivalent ON 4497 HF transistor 1B01F transistor 2sc 1586 i203 transistor transistor 2sk power amp transistor bc 2sk transistor 2sk 70 TBC846
Contextual Info: 2. List of Principal Characteristics of Transistors 2. List of Principal Characteristics of Transistors 2.1 Small Super Mini Type SSM < T ra n s is to r for G eneral Purpose, Low Frequency E q u ip m e n t> VCEtMÜ MAX. hFE Type No. V CEO (V) NPN PNP 2SC 4738

FDC658AP

Abstract: Single P-Channel, Logic Level, PowerTrench MOSFET marking I58 marking 58A
Contextual Info: FDC658AP Single P-Channel Logic Level PowerTrench MOSFET -30V, -4A, 50m: General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild's advanced PowerTrench process. It has been optimized for battery power management applications.

alternator diode 35a 9

Contextual Info: FDB8441 N-Channel PowerTrench MOSFET 40V, 120A, 2.5mΩ Applications „ Typ rDS on = 1.9mΩ at VGS = 10V, ID = 80A „ Powertrain Management „ Typ Qg(10) = 215nC at VGS = 10V „ Solenoid and Motor Drivers „ Low Miller Charge „ Electronic Steering „ Low Qrr Body Diode

Contextual Info: FDB8441 N-Channel PowerTrench MOSFET 40V, 120A, 2.5mΩ Features Applications ̈ Typ rDS on = 1.9mΩ at VGS = 10V, ID = 80A ̈ Powertrain Management ̈ Typ Qg(10) = 215nC at VGS = 10V ̈ Solenoid and Motor Drivers ̈ Low Miller Charge ̈ Electronic Steering

Contextual Info: FDD6630A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for

Contextual Info: FDD6630A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for

Contextual Info: FDD5670 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for

FDC8878

Contextual Info: FDC8878 N-Channel PowerTrench MOSFET 30 V, 8.0 A, 16 mΩ Features General Description „ Max rDS on = 16 mΩ at VGS = 10 V, ID = 8.0 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance.

Contextual Info: FDC8886 N-Channel Power Trench MOSFET 30 V, 6.5 A, 23 mΩ Features General Description „ Max rDS on = 23 mΩ at VGS = 10 V, ID = 6.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on) switching performance.

Contextual Info: FDMS015N04B N-Channel PowerTrench MOSFET 40V, 100A, 1.5mW Features Description • RDS on = 1.13mW (Typ.)@ VGS = 10V, ID = 50A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been especially tailored to minimize the on-state resistance and yet

Contextual Info: FDMC7680 N-Channel Power Trench MOSFET 30 V, 14.8 A, 7.2 mΩ Features General Description ̈ Max rDS on = 7.2 mΩ at VGS = 10 V, ID = 14.8 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This

FDD86110

Contextual Info: FDD86110 N-Channel PowerTrench MOSFET 100 V, 50 A, 10.2 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and

Contextual Info: FDMC7680 N-Channel Power Trench MOSFET 30 V, 14.8 A, 7.2 mΩ Features General Description „ Max rDS on = 7.2 mΩ at VGS = 10 V, ID = 14.8 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This

FDC8884

Abstract: marking I58
Contextual Info: FDC8884 N-Channel Power Trench MOSFET 30 V, 6.5 A, 23 mΩ Features General Description „ Max rDS on = 23 mΩ at VGS = 10 V, ID = 6.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on) switching performance.

8884 mosfet

Contextual Info: Single N-Channel Power Trench MOSFET 30 V, 6.5 A, 23 mΩ Features General Description „ Max rDS on = 23 mΩ at VGS = 10 V, ID = 6.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on) switching performance.

N_CHANNEL MOSFET 100V MOSFET

Contextual Info: FDMS015N04B N-Channel PowerTrench MOSFET 40V, 100A, 1.5mW Features Description • RDS on = 1.13mW (Typ.)@ VGS = 10V, ID = 50A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been especially tailored to minimize the on-state resistance and yet