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    FDD86110 Datasheets (1)

    Fairchild Semiconductor
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FDD86110
    		Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 12.5A DPAK-3 Original PDF 6
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    FDD86110 Price and Stock

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    onsemi FDD86110

    Trans MOSFET N-CH Si 100V 12.5A 3-Pin(2+Tab) DPAK T/R
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    Verical () FDD86110 2,500 250
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    FDD86110 947 127
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    FDD86110 382 2
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    Avnet Americas FDD86110 Tape & Reel 35 Weeks 2,500
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    Arrow Electronics () FDD86110 Cut Strips 382 1
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    FDD86110 Cut Strips 2 78 Weeks 1
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    Onlinecomponents.com FDD86110 2,500
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    Rochester Electronics FDD86110 947 1
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    EBV Elektronik FDD86110 53 Weeks 2,500
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    Maritex FDD86110 4,239 1
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    Master Electronics FDD86110 2,500
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    VBsemi Electronics Co Ltd FDD86110-VB

    MOSFETs; FDD86110-VB; VBSEMI
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    Maritex FDD86110-VB 4 5
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    Fairchild Semiconductor Corporation FDD86110

    Trans MOSFET N-CH Si 100V 12.5A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 100V 12.5A DPAK-3
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    Win Source Electronics FDD86110 51,378
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    FDD86110 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    FDD86

    Abstract: FDD86110
    Contextual Info: FDD86110 N-Channel PowerTrench MOSFET 100 V, 50 A, 10.2 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and


    Original     		fdd86110fdd86 PDF

    FDD86110

    Contextual Info: FDD86110 N-Channel Shielded Gate PowerTrench MOSFET 100 V, 50 A, 10.2 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been


    Original     		fdd86110 PDF

    FDD86110

    Contextual Info: FDD86110 N-Channel PowerTrench MOSFET 100 V, 50 A, 10.2 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and


    Original     		fdd86110 PDF

    FDD86110

    Contextual Info: FDD86110 N-Channel Shielded Gate PowerTrench MOSFET 100 V, 50 A, 10.2 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been


    Original     		fdd86110 PDF

    FDD86110

    Contextual Info: FDD86110 N-Channel PowerTrench MOSFET 100 V, 50 A, 10.2 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and


    Original     		fdd86110 PDF

    MAX16128UAACAC

    Contextual Info: MAX16128/MAX16129 Evaluation Kits Evaluate: MAX16128/MAX16129 General Description The MAX16128/MAX16129 evaluation kits EV kits demonstrate high overvoltage protection of the MAX16128/ MAX16129 for automotive applications that must survive load-dump and high-voltage transient conditions.


    Original     		max16128/max16129max16128/max16129al128/max16129+1max16128uaacac PDF

    Contextual Info: MAX16126/MAX16127 Evaluation Kits General Description The MAX16126/MAX16127 evaluation kits EV kits demonstrate high overvoltage protection of the MAX16126/ MAX16127 devices for automotive applications that must survive load-dump and high-voltage transient conditions.


    Original     		max16126/max16127max16126/max16127126/max16127 PDF